Advanced Lcd Technologies Development Center Co., Ltd.

Panasonic Liquid Crystal Display Co., Ltd.

Kaneka Corporation

Sharp Kabushiki Kaisha Corporation

Panasonic Corporation

Tomoya Kato

Masakiyo Matsumura

Yukio Taniguchi

Hiroyuki Ogawa

Masato Hiramatsu

Masayuki Jyumonji

Takahiko Endo

Genshiro Kawachi

Yoshinobu Kimura

Noritaka Akita

Kazufumi Azuma

Yoshiaki Nakazaki

Tohru Saitoh

Kazuo Kita

Hironori Yasukawa

Fumiki Nakano

Shinzo Tsuboi

The catheter of the present invention includes a tubular member having a reinforced portion and an unreinforced portion having a tapered portion; and a handle connected to a proximal end portion of the tubular member; wherein the handle has a first lumen and a second lumen positioned proximally beyond the first lumen, the unreinforced portion is fixed to the first lumen with a proximal end of the unreinforced portion positioned at the proximal end of the first lumen, and the catheter satisfies formulae (1) to (3):  (1)  (2)  (3),

Reinforced catheter with tapered proximal lumen

As source and drain wiring, a base layer and a cap layer are each formed of a MoNiNb alloy film, and a low-resistance layer is formed of Cu. The resultant laminated metal film is patterned through one-time wet etching to form a drain electrode and a source electrode. Cu serving as a main wiring layer does not corrode because of being covered with a MoNiNb alloy having good corrosion resistance. Further, even when a protective insulating film including an oxide is formed by plasma CVD in an oxidizing atmosphere, Cu is not oxidized. With the wet etching, the sidewall taper angle of the laminated metal film can be controlled to 20 degrees or more and less than 70 degrees.

Thin film transistor and method of manufacturing the same

A method of manufacturing a display device includes: forming a gate electrode on a substrate; forming a gate insulating film on the substrate; forming an oxide semiconductor on the substrate; forming a source electrode and a drain electrode on the substrate; forming a passivation film on the substrate; forming a common electrode on the substrate; forming an interlayer insulating film on the substrate; forming a pixel electrode on the substrate; forming an alignment film on the substrate; radiating UV-rays onto the oxide semiconductor; and heat-treating the oxide semiconductor irradiated with the UV-rays. The radiating UV-rays is performed after the forming an oxide semiconductor, and the heat-treating is performed after the forming a passivation film.

Method of manufacturing display device

The present invention relates to a water-resistant regenerated collagen fiber containing 12 wt % or more of zirconium salt in terms of zirconium oxide and 2 wt % or more of phosphorus compound in terms of phosphorus. The present invention also relates to a method for producing a water-resistant regenerated collagen fiber, and the method includes treating a regenerated collagen fiber with a zirconium salt to incorporate the zirconium salt into the regenerated collagen fiber, and then treating the regenerated collagen fiber with a phosphorus compound to incorporate the phosphorus compound into the regenerated collagen fiber, thereby obtaining a water-resistant regenerated collagen fiber containing 12 wt % or more of zirconium salt in terms of zirconium oxide and 2 wt % or more of phosphorus compound in terms of phosphorus. The present invention also relates to a fiber bundle for hair including 30 to 100 wt % of the water-resistant regenerated collagen fiber and 0 to 70 wt % of polyester-based fiber.

Water-resistant regenerated collagen fiber containing zirconium salt and phosphorus compound, method for producing the same, and fiber bundle for hair containing the same

A thin-film transistor array device includes: a driving TFT including a first crystalline semiconductor film including crystal grains having a first average grain size; and a switching TFT including a second crystalline semiconductor film including crystal grains having a second average grain size that is smaller than the first average grain size. The first crystalline semiconductor film and the second crystalline semiconductor film are formed at the same time by irradiating a noncrystalline semiconductor film using a laser beam having a Gaussian light intensity distribution such that a temperature of the noncrystalline semiconductor film is within a range of 600&#xb0; C. to 1100&#xb0; C., and the first crystalline semiconductor film is formed such that the temperature of the noncrystalline semiconductor film is within a temperature range of 1100&#xb0; C. to 1414&#xb0; C. due to latent heat generated by the laser irradiation.

Thin-film transistor array device, organic EL display device, and method of manufacturing thin-film transistor array device

According to a crystallization method, in the crystallization by irradiating a non-single semiconductor thin film of 40 to 100 nm provided on an insulation substrate with a laser light, a light intensity distribution having an inverse peak pattern is formed on the surface of the substrate, a light intensity gradient of the light intensity distribution is controlled, a crystal grain array is formed in which each crystal grain is aligned having a longer shape in a crystal growth direction than in a width direction and having a preferential crystal orientation (100) in a grain length direction, and a TFT is formed in which a source region and a drain region are formed so that current flows across a plurality of crystal grains of the crystal grain array in the crystal growth direction.

Crystallization method, thin film transistor manufacturing method, thin film transistor, display, and semiconductor device

There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.

Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus

A crystallization apparatus includes a light modulation element, and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface. The crystallization apparatus irradiates a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film. A curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 &#x3bc;m or below.

Crystallization apparatus, crystallization method, device, and light modulation element

In a laser processing method and a laser processing apparatus which irradiate a processing target body with a laser beam pulse-oscillated from a laser beam source, a processing state is monitored by a photodetector, and the laser beam source is again subjected to oscillation control on the moment when erroneous laser irradiation is detected, thereby performing laser processing. Further, in a laser crystallization method and a laser crystallization apparatus using a pulse-oscillated excimer laser, a homogenizing optical system, an optical element and a half mirror are arranged in an optical path, light from the half mirror is detected by a photodetector, and a light intensity insufficient irradiation position is again irradiated with a laser beam to perform crystallization when the detection value does not fall within a range of a predetermined specified value.

Processing method, processing apparatus, crystallization method and crystallization apparatus using pulsed laser beam

A crystallization apparatus of the present invention irradiates a non-single-crystal semiconductor film with a luminous flux having a predetermined light intensity distribution to crystallize the film, and comprises a phase modulation device comprising a plurality of unit areas which are arranged in a certain period and which mutually have substantially the same pattern, and an optical image forming system disposed between the phase modulation device and the non-single-crystal semiconductor film. The unit area of the phase modulation device has a reference face having a certain phase, a first area disposed in the vicinity of a center of each unit area and having a first phase difference with respect to the reference face, and a second area disposed in the vicinity of the first area and having substantially the same phase difference as that of the first phase difference with respect to the reference face.

Crystallization apparatus, crystallization method, and phase modulation device

An object of the present invention is to provide a thin film transistor having a high mobility and having fewer fluctuations in the mobility or threshold voltage characteristics. A non-single-crystal semiconductor thin film having a thickness of less than 50 nm and disposed on an insulating substrate is irradiated with laser light having an inverse-peak-patterned light intensity distribution to grow crystals unidirectionally in a lateral direction. Thus, band-like crystal grains having a dimension in a crystal growth direction, which is longer than a width, are arranged adjacent to each other in a width direction to form a crystal grain array. A source region and a drain region of a TFT are formed so that a current flows in the crystal growth direction in an area including a plurality of crystal grains of this crystal grain array.

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Yokohama, Japan

Tomoya Kato