Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Osaka Industrial Promotion Organization

Tomoya Iwahashi

Kazuyuki Yamae

Kohji Hiramatsu

Masaharu Yasuda

Koji Omura

Naoko Takei

Hiroshi Fukshima

Akihiko Murai

Ran Zheng

Fumio Kawamura

Masashi Yoshimura

Takatomo Sasaki

Hidenori Kamei

Yusuke Mori

Tomohiro Kanazawa

Tetsuji Shibata

Hideki Wada

Syuusaku Maeda

Masanori Morishita

Kunimichi Omae

A color vision correction filter includes a least one type of dye material and the lowest value of transmittance of the color vision correction filter in a wavelength band ranging from 440 nm to 600 nm, inclusive, is in the range of plus or minus 50 nm of 535 nm.

Color vision correction filter and optical component

A tungsten wire according one aspect of the present disclosure includes: a metal wire containing one of tungsten and a tungsten alloy; and a plating layer which covers a surface of the metal wire. The plating layer contains copper.

Tungsten wire and elastic component

A light exposure apparatus emits light which activates the body of the user. The light exposure apparatus includes a blue light source which emits blue light and a red light source which emits red light. The light includes blue light and red light. Blue light has a peak wavelength in a range from 445 nm to 500 nm. Red light has a peak wavelength in a range from 600 nm to 680 nm. The intensity of the peak wavelength of blue light is the strongest in the spectrum of the light, and the intensity of the peak wavelength of red light is the second strongest in the spectrum of the light. The relative intensity of the peak wavelength of the red light with respect to the peak wavelength of the blue light is in a range from 0.1 to 0.5 inclusive.

Light exposure apparatus

A light-emitting device includes a board; and light-emitting element arrays connected in parallel and each including light-emitting elements mounted on the board and connected in series. The light-emitting elements in each of the light-emitting element arrays include one or more red LED chips and one or more blue LED chips. Each of the red LED chips on the board is disposed non-successively to any other one of the red LED chips along a Y direction and along an X direction. The Y direction is parallel to a direction along which the red LED chips included in one of the light emitting arrays including the red LED chip are arranged. The X direction is perpendicular to the Y direction.

Light-emitting device with non-successive placement of light-emitting elements of one color, illumination light source having the same, and illumination device having the same

Lighting equipment is provided that enables illumination light having a stable FCI to be obtained, without influence from the lighting conditions. To this end, lighting equipmentperforms control of lighting a first light-emitting elementwhile substantially not lighting a second light-emitting elementwhen a red light-emitting elementis lit under first lighting conditions where a peak wavelength of light from the red light-emitting elementhas a first value, and of lighting the second light-emitting elementwhile substantially not lighting the first light-emitting elementwhen the red light-emitting elementis lit under second lighting conditions where the peak wavelength of the light from the red light-emitting elementhas a second value, the second value being greater than the first value.

Lighting equipment, lighting device, and light-emitting module

A light emitting device includes: a substrate; a first light emitting element and a second light emitting element that are mounted above the substrate; and a heat transfer pattern that is formed on the substrate. A rate of decrease in light output with respect to a temperature increase is greater for the second light emitting element than for the first light emitting element. The second light emitting element is mounted above the substrate via the heat transfer pattern, and the first light emitting element is mounted above the substrate without the heat transfer pattern.

Light emitting device, light source for illumination, and illumination apparatus

Lighting equipmentis provided that enables illumination light having a stable FCI to be obtained, without influence from the lighting conditions. To this end, a lighting circuitperforms control of lighting a first red light source Rand lighting a white light source W while not lighting or faintly lighting a second red light source Runder first lighting conditions in which the first red light source Ris expected to produce red light with a first peak wavelength, and of lighting the second red light source Rand lighting the white light source W while not lighting or faintly lighting the first red light source Runder second lighting conditions in which the first red light source Ris expected to produce the red light with a second peak wavelength that is shifted toward a longer wavelength relative to the first peak wavelength.

Lighting equipment, illumination device and light emitting module

The light emitting device comprises a mounting substrate and an LED chip which comprises an n-type nitride semiconductor layer, a nitride light emission layer on the n-type nitride semiconductor layer, p-type nitride semiconductor layer on the nitride light emission layer, an anode electrode opposite of the nitride light emission layer from the p-type nitride semiconductor layer, and a cathode electrode on the n-type nitride semiconductor layer. The mounting substrate has a patterned conductor which is connected to the cathode electrode through a bump and also connected to the anode electrode through a bump. The LED chip further comprises one or more dielectric layer between the p-type nitride semiconductor layer and the anode electrode to have an arrangement which resembles an island. The p-type nitride semiconductor layer has a first region which is overlapped with the bump. The dielectric layer is not formed within the first region.

Light emitting device

A semiconductor light emitting element, including: an n-type semiconductor layer having optical transparency with an emission wavelength of a light emitting layer, the light emitting layer and a p-type semiconductor layer, which are laminated; and a reflection film which is disposed on a side opposite to a surface from which light emitted from the light emitting layer is extracted, wherein the reflection film comprises: a transparent layer having optical transparency with the emission wavelength of the light emitting layer, and a metal layer, which is laminated on the transparent layer on a side opposite to the light emitting layer and is constituted by a metal material having a high reflectance, the transparent layer has a refractive index lower than a refractive index of a layer disposed on a side of the light emitting layer when viewed from the transparent layer, with the emission wavelength, and a thickness of the transparent layer is equal to or more than a value obtained by dividing a value of &#xbe; of the emission wavelength by the refractive index of the transparent layer.

Semiconductor light emitting element and illuminating apparatus using the same

A method of manufacturing the semiconductor light emitting element comprises a semiconductor layer forming step of forming the multilayered nitride semiconductor layer on the first wafer having a transparent property; a bonding step of bonding the multilayered nitride semiconductor layer to the first wafer; a groove forming step of forming the groove extending from the lower surface of the first wafer to the multilayered nitride semiconductor layer; a light applying step of applying a first light to the lower surface of the multilayered nitride semiconductor layer through the first wafer to reduce a bonding force between the multilayered nitride semiconductor layer and the first wafer; a separating step of separating the first wafer from the multilayered nitride semiconductor layer; and a cutting step of cutting the second wafer along the groove to divide into a plurality of the semiconductor light emitting element.

Method of manufacturing semiconductor light emitting element

A method for producing a Group III element nitride single crystal, which comprises reacting at least one Group III element selected from the group consisting of gallium(Ga), aluminum(Al) and indium(In) with nitrogen(N) in a mixed flux of sodium(Na) and at least one of an alkali metal (except Na) and an alkaline earth metal. The method allows the production, with a good yield, of the single crystal of a group III element nitride which is transparent, is reduced in the density of dislocation, has a bulk form, and is large. In particular, a gallium nitride single crystal produced by the method has high quality and takes a large and transparent bulk form, and thus has a high practical value.

Growing community of inventors

Osaka, Japan

Tomoya Iwahashi