Sharp Kabushiki Kaisha Corporation

Panasonic Corporation

Kawasaki Jukogyo Kabushiki Kaisha

Tomoya Inoue

Masanori Watanabe

Yoshihiko Tani

Toshiaki Asai

Katsuji Iguchi

Tetsuya Hanamoto

Akihiro Kurisu

Hiroyuki Kashihara

Hirotaka Watanabe

Naoto Yumiki

Hiroshi Nakatsu

Takayuki Hayashi

Yoshimasa Fushimi

Syunsuke Kimura

Satoshi Komada

Seiichi Suzuki

Tadashi Takeoka

Atsushi Kameyama

Masao Aramoto

Kosuke Kawabata

Kentaro Nonaka

A robot control device configured to control a robot includes a first memory part configured to store work data, a second memory part configured to store restoring data, a calculating part configured to perform an operation instructing process configured to read the work data and generate an operating instruction to the robot, and a data evacuation process configured to determine whether the operation instructing process operates normally, and when the calculating part determines that the operation instructing process does not operate normally, coincide the restoring data with the work data, and an operation controlling part configured to control operation of the robot based on the operating instruction.

Robot control device, robot system, and method of controlling robot

A nitride semiconductor light-emitting element includes at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. A multilayer body is provided between the n-type nitride semiconductor layer and the light-emitting layer, having at least one stack of first and second semiconductor layers. The second semiconductor layer has a greater band-gap energy than the first semiconductor layer. The first and second semiconductor layers each have a thickness of more than 10 nm and 30 nm or less. In applications in which luminous efficiency at room temperature is a high priority, the first semiconductor layer has a thickness of more than 10 nm and 30 nm or less, the second semiconductor layer has a thickness of more than 10 nm and 40 nm or less, and the light-emitting layer has V-shaped recesses in cross-sectional view.

Nitride semiconductor light-emitting element

In a semiconductor laser device, a n-type cladding layer, a multi-quantum well active layer, and a p-type cladding layer are sequentially laminated on an n-type substrate, and a stripe structure is provided on this semiconductor laminated section. The n-type cladding layer has a first n-type cladding layer configured of AlGaAs (0.4&#x3c;x1&#x2264;1), and a second n-type cladding layer configured of (AlGa)InP (0&#x2264;x2&#x2264;1, 0.45&#x2264;y2&#x2264;0.55). The p-type cladding layer is configured of (AlGa)InP (0&#x2264;x3&#x2264;1, 0.45&#x2264;y3&#x2264;0.55). The width of the stripe structure is 10 &#x3bc;m or more, and the refractive index with respect to the laser oscillation wavelength of the first n-type cladding layer is less than or equal to the refractive index with respect to the laser oscillation wavelength of the second n-type cladding layer.

Semiconductor laser device

A nitride semiconductor light emitting element is provided with: a substrate; a buffer layer that is provided on the substrate; a base layer that is provided on the buffer layer; an n-side nitride semiconductor layer that is provided on the base layer; an MQW light emitting layer that is provided on the n-side nitride semiconductor layer; and a p-side nitride semiconductor layer that is provided on the MQW light emitting layer. An x-ray rocking curve half-value width &#x3c9; (004) with respect to a (004) plane, i.e., the crystal plane of the nitride semiconductor, is 40 arcsec or less, or the x-ray rocking curve half-value width &#x3c9; (102) with respect to a (102) plane is 130 arcsec or less, and the rate P (80)/P (25) between light output P (25) at 25&#xb0; C. and light output P (80) at 80&#xb0; C. with a same operating current is 95% or more.

Nitride semiconductor light emitting element and method for manufacturing same

Provided is a nitride semiconductor light-emitting element including in order a first n-type nitride semiconductor layer, a second n-type nitride semiconductor layer, an n-type electron-injection layer, a light-emitting layer, and a p-type nitride semiconductor layer, wherein the average n-type dopant concentration of the second n-type nitride semiconductor layer is 0.53 times or less as high as the average n-type dopant concentration of the first n-type nitride semiconductor layer, and the average n-type dopant concentration of the n-type electron-injection layer is 1.5 times or more as high as the average n-type dopant concentration of the second n-type nitride semiconductor layer.

A projector system includes a first projection section projecting inputted image information onto a projection target, a laser pointer pointing a predetermined part of an image projected onto a screen, an image pick-up section picking up the image in a state pointed by the laser pointer, and a pointed position detecting section detecting the position of the part pointed by the laser pointer on the basis of the image information picked up by the image pick-up section. And a projection lens projects an image on the basis of the position of the part pointed by the laser pointer and detected by the pointed position detecting section and/or in correspondence to the image of the pointed part.

Projector system

Growing community of inventors

Osaka, Japan

Tomoya Inoue