Sharp Kabushiki Kaisha Corporation

Sharp Laboratories of America, Inc

Tomoya Baba

Seiji Kaneko

Sheng Teng Hsu

Akira Yoshida

Katsumasa Fujii

Akiyoshi Mutou

Tetsuya Ohnishi

A method of improving a semiconductor substrate including a SiGe film on a Si or SOI substrate is provided. The method includes determining a relationship between a film condition of the SiGe film and a hydrogen ion implantation condition used in making the SiGe film so as to achieve relaxation of lattice distortion in the SiGe film as well as improved crystallinity and/or surface condition of the SiGe film, so that improved conditions for improving quality of the SiGe film on the Si or SOI substrate can be determined.

Method for improving a semiconductor substrate having SiGe film and semiconductor device manufactured by using this method

A manufacturing method of a semiconductor substrate comprising the steps of: (a) forming a SiGe layer on a substrate of which the surface is made of silicon; (b) further forming a semiconductor layer on the SiGe layer; and (c) implanting ions into regions of the SiGe layer in the substrate that become element isolation formation regions, and carrying out a heat treatment.

Manufacturing method of semiconductor substrate

A semiconductor device comprises: a semiconductor substrate on which a silicon germanium film, a carbon-containing silicon film and a silicon film are formed in this order and a gate electrode on the semiconductor substrate with intervention of a gate oxide film, wherein a channel region of the semiconductor device the is formed in the carbon-containing silicon film or wherein a channel region of the semiconductor device is formed in the silicon germanium film.

Semiconductor device with NMOS including Si:C channel region and/or PMOS including SiGe channel region

A method of forming a memory device includes preparing a substrate having predefined characteristics; forming a first layer set on the substrate, including: building a first forming layer, having first form segments, on the substrate; building placeholder sidewalls on the first form segments wherein the sidewalls have a thickness of between about one nm and 100 nm; building a second forming layer, having second form segments, on the substrate between the placeholder sidewalls; removing the placeholder sidewalls forming vacated areas; and building active devices in the vacated areas.

Nano-meter memory device and method of making the same

A method for manufacturing a semiconductor device including steps of forming a gate oxide film and a gate electrode on a semiconductor substrate; implanting impurity ions of the same conductivity as the substrate in an oblique direction at a first tilt angle to the normal line of the substrate and with a first acceleration voltage and dose, while rotating the substrate about the normal line thereof; implanting impurities of the same conductivity as the substrate in the same manner except for using a tilt angle to the normal line which is greater and a dose which is smaller than that of the first tilt angle and dose; and forming source and drain regions by implanting impurity ions of the opposite conductivity to the substrate into the substrate, followed by performing a thermal treatment.

Semiconductor device with LDD structure

A method for manufacturing a semiconductor device including steps of forming a gate oxide film and a gate electrode on a semiconductor substrate; implanting impurity ions of the same conductivity as the substrate in an oblique direction at a first tilt angle to the normal line of the substrate and with a first acceleration voltage and dose, while rotating the substrate about the normal line thereof; implanting impurities of the same conductivity as the substrate in the same manner except for using a tilt angle to the normal line which is greater and a dose is smaller than that of the first tilt angle and dose; and forming source and drain regions by implanting impurity ions of the opposite conductivity to the substrate into the substrate, followed by performing a thermal treatment.

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Ikoma, Japan

Tomoya Baba