Sharp Kabushiki Kaisha Corporation

Osaka University

Tomotoshi Satoh

Kenichi Tanaka

Koichiro Fujita

Hiroki Kanai

Hiroyuki Komeda

Katsuaki Suganuma

Hiroya Sato

Satoshi Morishita

Seiichiro Kihara

Jinting Jiu

Takao Kinoshita

Shijo Nagao

Tadashi Yasui

Aiji Suetake

Fumiaki Matsuura

Naomichi Fujii

A power module includes a power circuit which includes one or more power semiconductors; and a control circuit which supplies a gate signal to each of the one or more power semiconductors. The control circuit includes one or more gate drivers which generate the gate signal in accordance with a control signal and in which a side to which the control signal is input and a side on which the gate signal is generated are insulated, a control input circuit to which the control signal is input and which supplies the control signal to the one or more gate drivers, and a control output circuit which supplies the gate signal to each of the power semiconductors.

Power module

A primary-side electrode and a secondary-side electrode of a power device are disposed so as to straddle plural separate primary and secondary wires in a first conductive layer, a second conductive layer includes plural separate primary and secondary wires, an insulating part is disposed in a first insulating layer in a region between the primary and secondary wires and directly below the power device, an intralayer insulating part is disposed in the second conductive layer in a region between the primary and secondary wires and directly below the power device, and a via that connects the primary wire in the first conductive layer and the primary wire in the second conductive layer and connects the secondary wire in the first conductive layer and the secondary wire in the second conductive layer is disposed in the first insulating layer directly below the primary-side and secondary-side electrodes of the power device.

In a power semiconductor module, a first conductive layer including first to fourth electrodes are formed on one of principal surfaces of an insulating layer, and a conductive substrate functioning as a second conductive layer is formed on the other one of principal surfaces. Current paths are switched by controlling switching of a first transistor and a second transistor disposed on a surface of the first conductive layer thereby performing a power conversion. A capacitor is connected, in a region, between the first electrode and the second electrode. When a current flows in the region through the second conductive layer, a charging/discharging current occurs in the capacitor, which results in magnetic field cancellation.

Power semiconductor module, electronic device, and method for controlling power semiconductor module

Provided is an electrode like a protruding electrode that is self-standing on a substrate. A conductive paste () contains a conductive powder, an alcoholic liquid component, and no adhesives. The conductive powder contains conductive particles having a thickness of 0.05 &#x3bc;m or more and 0.1 &#x3bc;m or less and a representative length of 5 &#x3bc;m or more and 10 &#x3bc;m or less, the representative length being a maximum diameter in a plane perpendicular to the direction of the thickness. The weight percentage of the alcoholic liquid component relative to the conductive paste is 8% or more and 20% or less.

Conductive paste having dilatancy, electrode connection structure including the paste, and method for producing the structure

A semiconductor wafer is provided with a substrate, a GaN type semiconductor film which is laminated on the substrate, a plurality of element regions which are provided on the GaN type semiconductor film, a dielectric film which is laminated on the GaN type semiconductor film, and a dicing region which has a dicing groove which is provided in a lattice form without passing through the dielectric film described above so as to partition the element regions described above. Then, an end on the element region side of the dicing groove is higher or lower than a central portion of the dicing groove in a width direction in a bottom surface of the dicing groove.

Semiconductor wafer, semiconductor device diced from semiconductor wafer, and method for manufacturing semiconductor device

A production method for a semiconductor element () includes: a semiconductor element forming step of forming the semiconductor element () including a dielectric film (); a dicing region forming step of forming dicing regions () by removing the dielectric film () in partition regions that partition the semiconductor element (); and a dicing step of dicing the dicing regions ().

Production method for semiconductor element, and semiconductor element

First memory chips each have a memory cell as storage means for storing data and do not have a redundant memory cell as redundant storage means for repairing an erroneous bit in the memory cell. Furthermore, a logic minimal in degree is solely provided for operation on a control logic of a second memory chip. The second memory chip has a control logic for effecting memory control of the memory cells, the redundant memory cells, etc. and a redundant memory cell for repairing an error bit of the first memory chips. The memory device is structured by stacking the first and second memory chips.

Growing community of inventors

Sakai, Japan

Tomotoshi Satoh