Japan Science and Technology Agency

Tohoku University

Jfe Mineral Company, Ltd.

Tomoteru Fukumura

Masashi Kawasaki

Hideomi Koinuma

Kota Terai

Yosuke Iwasaki

Provided is a method of evaluating properties of ferrite which can continuously measure change in magnetic properties accompanying change in composition of the ferrite merely by preparing one specimen. A composition gradient ferrite thin film constituted of a plurality of composition gradient ferrite layers which are formed by inclining component composition in the horizontal direction is formed on a single crystal substrate having light transmitting property using a thin film forming method, and a magneto-optical effect is continuously measured along the composition gradient direction of the ferrite thin film whereby change in magnetic properties accompanying a change in composition of the ferrite is continuously measured also provided is a method of evaluating properties of ferrite which can continuously measure change in magnetic properties accompanying change in composition of the ferrite merely by preparing one specimen.

Ferrite material having composition gradient for measuring magneto-optical-effect properties and method for evaluating properties of ferrite

A method of adjusting the in-plane lattice constant of a substrate and an in-plane lattice constant adjusted substrate are provided. A crystalline substrate () made of SrTiOis formed at a first preestablished temperature thereon with a first epitaxial thin film () made of a first material, e. g., BaTiO, and then on the first epitaxial thin film () with a second epitaxial thin film () made of a second material, e. g., BaxSrTiO(where 0&#x3c;x&#x3c;1), that contains a substance of the first material and another substance which together therewith is capable of forming a solid solution in a preestablished component ratio. Thereafter, the substrate is heat-treated at a second preselected temperature. Heat treated at the second preestablished temperature, the substrate has dislocations () introduced therein and the second epitaxial thin film () has its lattice constant relaxed to a value close to the lattice constant of bulk crystal of the second material. Selecting the ratio of components x of the other substance in the second material allows a desired in-plane lattice constant to be realized.

Method for manufacturing in-plane lattice constant adjusting substrate and in-plane lattice constant adjusting substrate

Growing community of inventors

Sendai, Japan

Tomoteru Fukumura