Renesas Electronics Corporation

Nec Electronics Corporation

Tomotake Morita

Masashige Moritoki

Hiromi Sasaki

Kenichi Yamamoto

Takashi Tonegawa

Masafumi Shiratani

Norihiko Matsuzaka

To improve performance of a semiconductor device. Over a semiconductor substrate, a gate electrode is formed via a first insulating film for a gate insulating film, and a second insulating film extends from over a side wall of the gate electrode to over the semiconductor substrate. Over the semiconductor substrate in a part exposed from the second insulating film, a semiconductor layer, which is an epitaxial layer for source/drain, is formed. The second insulating film has a part extending over the side wall of the gate electrode and a part extending over the semiconductor substrate, and a part of the semiconductor layer lies over the second insulating film in the part extending over the semiconductor substrate.

Semiconductor device and method of manufacturing the same

Semiconductor device with epitaxial semiconductor layer for source/drain on substrate, and method of manufacturing the same

The method of manufacturing a semiconductor device comprises forming a metal film over silicon regions and insulating films; performing a first heat treatment under an oxygen atmosphere containing oxygen as a main ingredient, to form a first silicide film in the silicon region by reacting the metal film and the silicon region, and to simultaneously form a metal oxide by oxidizing the entire surface of the metal film from the surface side thereof; and selectively removing the metal oxide and the unreacted metal film using a chemical.

Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, includes: (a) obtaining a surface of a polishing target, wherein an insulating film and a metal film are exposed; and (b) polishing the surface having the exposed insulating film and the exposed metal film. The step (b) includes; (b1) polishing the surface in a condition with high frictional force, and (b2) polishing the surface in a condition with usual frictional force lower than the high frictional force after the step (b1).

Method and apparatus of manufacturing semiconductor device

A semiconductor manufacturing apparatus includes a supporting unit for supporting a semiconductor wafer received from a CMP apparatus and a vacuuming system for holding the wafer on the supporting unit. The vacuuming is applied only in a peripheral area of the wafer. In the peripheral area of the wafer, any circuit such as interconnections and devices are not manufactured. When the wafer is released by supplying gas to the vacuumed space, even if static electricity occurs, the electronic circuit to be manufactured on the wafer does not harmed, because the static electricity occurs only in the peripheral area where any circuit does not exist.

Semiconductor manufacturing apparatus and semiconductor manufacturing method

An edge section of a wafer can be polished, and at same time, a polishing surface of a polishing member can be dressed by a dresser mechanism. A polishing member has annular concave trenches, which are coaxially formed in the front surface thereof, and at least an inner surface of the concave trenches is composed of an inclined polishing surface for polishing an edge section of the wafer, and a wafer pressing mechanism presses the edge section of the wafer against the inner surfaces in at least one side of the concave trench of the polishing member, and a dresser mechanism dresses at least the inner surfaces in at least one side of the concave trench of the polishing member.

Growing community of inventors

Kawasaki, Japan

Tomotake Morita