Tokyo Ohka Kogyo Co., Ltd.

Tomotaka Yamada

Toshikazu Takayama

Katsumi Oomori

Yohei Kinoshita

Mitsuru Sato

Hideo Hada

Takeshi Iwai

Kazufumi Sato

Satoshi Fujimura

Masaaki Yoshida

Jun Iwashita

Taku Hirayama

Toshikazu Tachikawa

Keita Ishiduka

Daisuke Kawana

Ryoichi Takasu

Kazuo Tani

Koki Tamura

Takayuki Hosono

Kazuyuki Nitta

Akiyoshi Yamazaki

Hiroto Yukawa

Satoshi Maemori

Yasushi Fujii

Takashi Kamizono

Tatsuya Fujii

Yusuke Suzuki

Tomoyuki Ando

Yuki Fukumura

Hiroshi Shimbori

Hisanobu Harada

Isamu Takagi

Koji Yonemura

A resist composition which generates an acid upon exposure and whose solubility in a developing solution changes under the action of an acid, including a base material including a copolymer having a structural unit represented by general formula (a9-1) or a structural unit represented by general formula (a9-2), 30 mol % or more of a structural unit represented by general formula (a10-1) and 45 mol % or more of a structural unit having an acid-decomposable group which increases a polarity under the action of an acid. In each formula, Rs is a hydrogen atom or the like; Yaand Yaare a single bond or a divalent linking group; Ris a hydrocarbon group having 1 to 20 carbon atoms or the like; Ris an oxygen atom or the like; j and nare integers of 1 to 3; Wais a (n+1)-valent aromatic hydrocarbon group. 

Resist composition and method for forming resist pattern

A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under the action of acid, the resist composition including a base component that exhibits changed solubility in a developing solution under the action of acid, the base component containing a resin component having a structural unit represented by general formula (a0-1) shown below: in which Rrepresents a hydrogen atom or an alkyl group of 1 to 5 carbon atoms, Rrepresents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, and X represents an oxygen atom, a sulfur atom, or an alkylene group of 1 to 5 carbon atoms which may contain an oxygen atom or a sulfur atom.

Resist composition, method of forming resist pattern, and polymeric compound

A method of forming a resist pattern of high aspect ratio excelling in etching resistance by the use of nanoimprint lithography. The method of forming a resist pattern by nanoimprint lithography comprises the steps of disposing organic layer () on support (); providing resist layer () on the organic layer () with the use of chemical amplification type negative resist composition containing silsesquioxane resin (A); pressing light transmission allowing mold () with partial light shielding portion () against the resist layer () and thereafter carrying out exposure from the upside of the mold (); and detaching the mold ().

Method of forming resist pattern by nanoimprint lithography

A photosensitive resin composition which has a quenching function and satisfactory long-term stability and which, in particular, can be prevented from suffering sensitivity abnormality caused by change with time during storage (change from given sensitivity); and a method of forming a pattern from the composition. The resist composition contains a base resin comprising, as the main component, a silicon-containing polymer which is a siloxane or silsesquioxane polymer or the like, the composition containing, as a quencher, a specific sulfonium compound in place of a nitrogenous compound.

Photosensitive resin composition and method of forming pattern

A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

Resist composition

A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a), including structural units (a-) containing an anhydride of a dicarboxylic acid and structural units (a-) containing a phenolic hydroxyl group.

A positive resist composition capable of forming a resist pattern having excellent shape is provided. This composition is a positive resist composition including a base resin component (A) and an acid generator component (B) generating an acid under exposure, which are dissolved in an organic solvent, wherein the base resin component (A) is a silicone resin, and the organic solvent contains propylene glycol monomethyl ether (x1) and a solvent (S2) having a boiling point higher than that of the propylene glycol monomethyl ether.

Positive resist composition

A lift-off positive resist composition capable of forming a fine lift-off pattern is provided. This composition comprises a base resin component (A) and an acid generator component (B) generating an acid under exposure, wherein the base resin component (A) is a silicone resin.

Lift-off positive resist composition

A positive resist composition having excellent mask linearity is provided. This composition is a positive resist composition comprising a base resin component (A) and an acid generator component (B) generating an acid under exposure, wherein the base resin component (A) is a silicone resin and the acid generator component (B) contains an onium salt-based acid generator (B1) containing a perfluoroalkyl sulfonate ion having 3 or 4 carbon atoms as an anion.

The invention discloses an improvement in the photolithographic patterning process of a photoresist layer in the manufacture of semiconductor devices in which occurrence of defects in the patterned resist layer can be greatly suppressed resulting in increased reliability of the semiconductor devices and productivity thereof. The improvement can be accomplished by using a chemical-amplification positive-working photoresist composition which exhibits a rate of film thickness reduction in the range from 0.09 to 1.0 nm/second when the photoresist layer before light-exposure is kept in a 2.38% aqueous solution of tetramethylammonium hydroxide at 23&deg; C. to dissolve away the resist layer.

Method for the preparation of a semiconductor device

The invention discloses an improvement in the photo-lithographic patterning process of a photoresist layer in the manufacture of semiconductor devices in which occurrence of defects in the patterned resist layer can be greatly suppressed resulting in increased reliability of the semiconductor devices and productivity thereof. The improvement can be accomplished by using a chemical-amplification positive-working photoresist composition which exhibits a rate of film thickness reduction in the range from 0.09 to 1.0 nm/second when the photoresist layer before light-exposure is kept in a 2.38% aqueous solution of tetramethylammonium hydroxide at 23&deg; C. to dissolve away the resist layer.

The invention discloses a chemical-amplification positive-working photoresist composition of the crosslinked type used for photolithographic patterning works in the manufacture of electronic devices. While the composition comprises a film-forming resinous ingredient capable of being imparted with increased alkali-solubility in the presence of an acid and a radiation-sensitive acid-generating compound, optionally, with further admixture of an aliphatic amine compound and an acid compound, the inventive photoresist composition is characterized by the unique resinous ingredient which consists of four types of monomeric units including hydroxystyrene units, styrene units, monomeric units having acid-dissociable solubility-reducing groups and crosslinking units. The acid-dissociable solubility-reducing group is not conventional tert-butoxycarbonyloxy group but characteristically a 1-alkylcyclohexyl group or a polycyclic saturated aliphatic hydrocarbon group.

Crosslinked positive-working photoresist composition

Disclosed is a novel positive-working chemical-amplification photoresist composition used in the photolithographic patterning works in the manufacture of semiconductor devices capable of giving an excellently patterned resist layer with remarkably small film thickness reduction by the development treatment with an aqueous alkaline developer solution in the areas unexposed to patternwise exposure to light. Characteristically, the resinous ingredient in the composition, which is formulated in combination with a radiation-sensitive acid-generating agent and imparted with an increase in the solubility in an alkaline developer solution, is a ternary copolymeric resin consisting of the monomeric units of (a) hydroxystyrene units, (b) styrene units and (c) 1-alkylcyclohexyl (meth)acrylate units each in a specified molar fraction.

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Kawasaki, Japan

Tomotaka Yamada