Jsr Corporation

Japan Synthetic Rubber Co., Ltd.

Tomotaka Shinoda

Kinji Yamada

Takahiko Kurosawa

Minoru Matsubara

Isao Nishimura

Nobuyuki Miyaki

Toshiaki Kadota

Takahiro Hayama

Naoki Nishiguchi

Yasutake Inoue

Satoshi Kamo

Yasutaka Kamei

Shintarou Fujitomi

Kouhei Gotou

Yasuo Matsuki

Kazuo Nishimoto

Satoko Hakamatsuka

Osamu Kose

The circuit board according to the present invention includes a wiring portion and a non-wiring portion, the wiring portion having a metal layer and a resin layer, the non-wiring portion having a resin layer, the resin layer at a frequency 10 GHZ having a relative permittivity of from 2 to 3 at 23&#xb0; C., and the circuit hoard satisfying a relationship: (A&#x2212;B)/B&#x2264;0.1 wherein A is the maximum value of the thickness in the wiring portion (&#x3bc;m) and B is the minimum value of the thickness in the non-wiring portion (&#x3bc;m).

Circuit board

Provided is a high-frequency circuit laminate that can reduce the transmission loss of electrical signals in high-frequency circuits and produce circuit boards with excellent smoothness. The high-frequency circuit laminate according to the present invention includes a metal layer and a resin layer which are laminated in contact with each other, the resin layer having an elastic modulus from 0.1 to 3 GPa, and the resin layer having an dielectric loss tangent from 0.001 to 0.01 and a relative permittivity from 2 to 3 at a frequency of 10 GHz at 23&#xb0; C.

High-frequency circuit laminate and method for producing same, and B-stage sheet

A semiconductor treatment composition includes particles having a particle size of 0.1 to 0.3 micrometers in a number of 3&#xd7;10to 1.5&#xd7;10per mL.

Semiconductor treatment composition and treatment method

A semiconductor treatment composition includes potassium, sodium, and a compound A represented by the formula (1), and has a potassium content M(ppm) and a sodium content M(ppm) that satisfy M/M=1&#xd7;10to 1&#xd7;10.

A binder composition for an electrode of an electric storage device is provided. The binder composition comprises (A) at least one polymer selected from the group consisting of polyamic acids and imidized polymers thereof having an imidization rate of 50% or less and (B) water. The ratio Ma/Mb of the content of the polymer (A), Ma (parts by mass), to the content of the water (B), Mb (parts by mass), ranges from 500 to 5,000. The binder composition for an electrode of the present invention provides an electric storage device having a large charge/discharge capacity and a low degree of capacity degradation due to repetition of a charge/discharge cycle.

Binder composition for electrode of electric storage device

A chemical mechanical polishing aqueous dispersion includes (A) abrasive grains, (B) an organic acid, and (C1) copper ions or (C2) at least one kind of metal atoms selected from Ta, Ti, and Rb, the chemical mechanical polishing aqueous dispersion including the copper ions (C1) at a concentration of 1&#xd7;10to 2&#xd7;10ppm, or including the at least one kind of metal atoms (C2) selected from Ta, Ti, and Rb at a concentration of 1&#xd7;10to 1&#xd7;10ppm.

Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method using the same, and method of recycling chemical mechanical polishing aqueous dispersion

A curable resin composition comprising (A) a hydrolyzate or a partial condensate of an organosilane compound, or both; (B) at least one compound selected from the group consisting of polyamic acids having a hydrolyzable silyl group or carboxylic acid anhydride group, or both, and polyimides having a hydrolyzable silyl group or carboxylic acid anhydride group, or both; and (C) a chelate compound or an alkoxide compound with a metal selected from the group consisting of zirconium, titanium, and aluminum, or both the chelate compound and the alkoxide compound. The resin composition can be cured and fabricated without producing no cracks into a cured product such as a semiconductor device having a low dielectric constant, high heat resistance and moisture resistance, superior adhesion to various substrate materials, superb electrical insulation properties, and low moisture absorption. Semiconductor devices using this curable resin composition as an insulating film exhibit a low electricity consumption, work at a high speed, and have excellent reliability.

Curable resin composition cured products

Composition for film formation and film

Curable resin composition and cured products

Growing community of inventors

Minato-ku, Japan

Tomotaka Shinoda