Seiko Epson Corporation

Tomotaka Matsumoto

Tsuyoshi Maeda

Tsukasa Eguchi

Yasunori Hattori

A photoelectric conversion device includes circuit portions disposed on a substrate, a first electrode electrically connected to one of the circuit portions, an optically transparent second electrode opposing the first electrode, and a photoelectric conversion portion disposed between the first electrode and the second electrode. The photoelectric conversion portion has a multilayer structure including a light absorption layer made of a p-type compound semiconductor film having a chalcopyrite structure, an amorphous oxide semiconductor layer, and a window layer made of an n-type semiconductor film.

Photoelectric conversion device and electronic apparatus

A light source integrated photoelectric conversion apparatus is provided, which includes: a light-emitting element that includes a light-emitting layer, and emits light in a predetermined emission direction through one surface of the light-emitting layer; and a plurality of photoelectric conversion elements that includes a photoelectric conversion layer formed on a region which is not overlapped with the light-emitting layer, and converts light having passed through one surface of the photoelectric conversion layer into an electrical signal. In the light source integrated photoelectric conversion apparatus, the light-emitting element is formed on the same substrate as that of the plurality of photoelectric conversion element, one surface of the photoelectric conversion layer is disposed on the side opposite to the emission direction further away from the other surface of the light-emitting layer, and one surface of the light-emitting layer and the substrate face each other.

Light source integrated photoelectric conversion apparatus

A photoelectric conversion element includes a light receiving layer that is formed of microcrystal semiconductor, a first semiconductor layer of a first conductive type that is formed on one face side of the light receiving layer, and a first intermediate layer that is interposed between the first semiconductor layer and the light receiving layer and is formed of amorphous semiconductor.

Photoelectric conversion element, photoelectric conversion device, and image sensor

An electroluminescence device includes a first, second, and third light emitting elements above a substrate. The first light emitting element includes a first transparent anode, a second transparent conductive film, a third transparent conductive film, a cathode, and a first light emitting function layer including a first luminescent layer which emits a first light of a first color. The second light emitting element includes a second transparent anode, the third transparent conductive film, the cathode, and a second light emitting function layer including a second luminescent layer which emits a second light of a second color, which is different from the first color. The third light emitting element includes a third transparent anode, the cathode, and a third light emitting function layer including a third luminescent layer which emits a third light of a third color, which is different from the first and second colors.

Electroluminescence device, method of manufacturing electroluminescence device, and electronic apparatus

A light emitting apparatus having light emitting devices having a stack of a light-transmitting anode, a functional layer including at least a light emitting layer, and a cathode for a plurality of pixels corresponding to red, green, and blue colors on a substrate, wherein an optical resonator having a lower-layer-side reflecting layer at a lower-layer side of the anode is formed in the light emitting device, wherein a plurality of the pixels include pixels which correspond to different thicknesses of a anode, and wherein a light-transmitting insulating protective film is formed between the anode and the lower-layer-side reflecting layer to cover the lower-layer-side reflecting layer.

Method of producing a light emitting apparatus provided with an insulating film between reflective layers and patterned anodes formed of different thicknesses

A liquid crystal display includes a pair of substrates, a liquid crystal layer being held by the pair of substrates, a first electrode and a second electrode that drive the liquid crystal layer, and a driving element that controls the driving of the first electrode, the first electrode, the second electrode, and the driving element being disposed on one of the pair of substrates. The one of the pair of substrates includes a resin film, an overlying film disposed on the resin film, the first electrode being disposed on the top surface of the overlying film, an electrode insulating film covering the first electrode, the second electrode being disposed on the top surface of the electrode insulating film, a connection electrode disposed on the electrode insulating film and connecting the first electrode to the driving element, and a connection line disposed below the overlying film and connected to the second electrode. The connection electrode is connected to the first electrode through a first through hole passing through the electrode insulating film and is connected to the driving element through a second through hole passing through the overlying film and the electrode insulating film. The second electrode is connected to the connection line through a third through hole passing through the overlying film and the electrode insulating film.

Growing community of inventors

Matsumoto, Japan

Tomotaka Matsumoto