Sony Corporation

Sony Corpotation

Tomotaka Fujisawa

Chihiro Arai

Hiroyuki Miwa

Takayuki Gomi

Mamoru Shinohara

A semiconductor device manufacturing method including a process of forming a silicon oxide film by thermally oxidizing silicon in the atmosphere of oxygen gas or in the atmosphere of mixed gas of oxygen and hydrogen at a temperature of 800&#xb0; C. or more in the state in which at least the silicon surface serving as a light-receiving portion of a photodiode is exposed, and a process of depositing a silicon nitride film on the silicon oxide film. At least the silicon oxide film and the silicon nitride film are finally left on the surface of the photodiode as an antireflection film.

Method of manufacturing photodiode intergrated chip

There are provided a semiconductor device including a photo receiving region having high photosensitivity by forming an antireflection film capable of both decreasing a reflectance and lowering a surface level density, and a manufacturing method of the semiconductor device. The semiconductor device includes an antireflection filmcomprised of a laminated film including a first insulating filmformed on the surface of a silicon substrateand a second insulating filmhaving a refractive index different from that of the first insulating filmformed above the first insulating film in a light-receiving areaof a semiconductor photo receiving region PD, and in which the first insulating filmis comprised of a silicon oxide film formed by oxidizing silicon on the surface of the semiconductor photo receiving region PD. Further, the semiconductor photo receiving region PD has a configuration such that it may receive light having a wavelength 500 nm or less. Furthermore, when this semiconductor device is manufactured, in the state in which the silicon surface which serves as a light-receiving portion of the photodiode PD is exposed, the silicon oxide filmis formed by thermally oxidizing silicon in the atmosphere of oxygen gas or in the atmosphere of mixed gas of oxygen and hydrogen at a temperature of 800&#xb0; C. or more.

Photodetector integrated chip

A semiconductor device having an MIS capacitor having a low capacitance value and an MIS capacitor having a high capacitance value formed on the same substrate, and a manufacturing method thereof. The first MIS capacitor consists of a lower conductive material region formed on the substrate, a multilayer dielectric film consisting of a first insulating film, serving as both an interlayer insulating film and a dielectric film, and a second insulating film serving as a dielectric film of the second MIS capacitor, and an upper conductive material film, and the capacitance of the first MIS capacitor is determined by an area of the dielectric film formed by the second insulating film.

Method for manufacturing a semiconductor device with MIS capacitors with dielectric film in common

A semiconductor device having a photo diode which has substantially the same sensitivity to a plurality of light having different wavelengths, includes a first and a second conductivity type semiconductor layer formed at a surface layer portion of the first conductivity type semiconductor layer, wherein the sensitivity to light of a first wavelength and a second wavelength which is different from the first wavelength, are made substantially the same by designing a region in which a depletion layer spreads from a junction of the first and second conductivity type semiconductor layers and when an inverse bias is applied to the first and second conductivity type semiconductor layers, for example, by designing it to spread in a region of 3 to 6 &mgr;m or a region of 2 to 7 &mgr;m from the surface of the second conductivity type semiconductor layer in the depth direction.

Semiconductor device having photo diode with sensitivity to light of different wavelengths

In a semiconductor device having a junction type diode using a bipolar transistor and a process for producing the same, a ratio of a diode electric current to a leakage electric current is improved, and latch up resistance is improved without increasing the process. A p type semiconductor substrate, a collector buried region and an n type epitaxial layer are formed, a p type first impurity region is formed in the n type epitaxial layer, an n type second impurity region is formed in the first impurity region, an N sinker is formed, and a collector electrode is formed, with a common electrode being formed on the first and second impurity regions.

Semiconductor device and a process for producing same

A semiconductor device having an MIS capacitor having a low capacitance value and an MIS capacitor having a high capacitance value, and to a manufacturing method thereof. One MIS capacitor consists of a lower conductive material region formed on the substrate, a multilayer dielectric film consisting of a first insulating film, serving as both an interlayer insulating film and a dielectric film, and a second insulating film serving as a dielectric film of the other MIS capacitor, and an upper conductive material film, and the capacitance of the first MIS capacitor is determined by an area of the dielectric film formed by the second insulating film.

Semiconductor device with MIS capacitors sharing dielectric film

Semiconductor device having a trimming circuit for suppressing leakage current

A semiconductor device in which a photoreceptor element and a semiconductor element are formed on a common semiconductor substrate, includes: a substrate of a first conductive type; and a semiconductor layer of a second conductive type formed on the substrate; wherein the photoreceptor element is composed of the substrate and the semiconductor layer; and an impurity concentration region of the first conductive type having an impurity concentration higher than that of the substrate is provided at a position under the semiconductor layer in a region where the semiconductor element is to be formed.

Semiconductor device

In a semiconductor device manufacturing method for etching an insulating film on the surface of a silicon semiconductor to expose the surface of the silicon semiconductor, and then forming a thin film so as to cover at least the etched portion. Simultaneously with or after etching, an SiC film is formed on the surface of a semiconductor which is exposed by the etching, and a thin film is formed on the SiC film without removing the SiC film. Specifically, the etching is performed by using carbon-based etching gas, for example, to form the SiC film simultaneously with the etching.

Method of manufacturing semiconductor device

A semiconductor device comprising a MIS structure comprising a first electrically conductive film formed on an oxide film, a second electrically conductive film formed on at least a part of said first electrically conductive film, an insulator film formed on said second electrically conductive film, and a third electrically conductive film formed on said insulator film; and at least one electrode contact portion formed on said first electrically conductive film. A semiconductor device comprising a MIS capacitor having a diffusion layer inside the semiconductor substrate as a lower electrode with a first electrically conductive type being isolated using another diffusion layer having the opposite conductive type, and said another diffusion layer having the opposite conductive type being further isolated using a diffusion layer for isolation having the first conductive type and which is earthed. A BiCMOS semiconductor device comprising a resistor and an impurity source for the emitter and the emitter electrode for the bipolar transistor made of a same conductor layer, and further, a same conductor layer is provided as the contact electrode for the resistor and the gate for the MOS transistor. Also claimed are processes for fabricating the aforementioned semiconductor devices.

Growing community of inventors

Tokyo, Japan

Tomotaka Fujisawa