Kioxia Corporation

Tomotaka Ariga

Akihiro Kajita

Daisuke Ikeno

Mitsuo Ikeda

Hiroki Kitayama

According to one embodiment, a semiconductor storage device includes a memory pillar extending in a first direction. The memory pillar includes a tunnel insulation film, a charge storage layer on the tunnel insulation film, and a first block insulation film on the charge storage layer. A conductor layer extends in a second direction intersecting the first direction to meet a portion of the memory pillar. The conductor layer includes a first layer comprising molybdenum and a second layer comprising tungsten. The first layer is between the memory pillar and the second layer in the second direction.

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Yokkaichi Mie, Japan

Tomotaka Ariga