Nissan Chemical Corporation

Tomotada Hirohara

Takahiro Kishioka

Makoto Nakajima

Keisuke Hashimoto

Hiroto Ogata

Mamoru Tamura

Yuki Kato

A resist underlayer film-forming composition including: a resin having a repeating structural unit including at least one —C(═O)—O— group in a main chain and a repeating structural unit including at least one hydroxy group in a side chain, or including at least one —C(═O)—O— group in a main chain and at least one hydroxy group in a side chain, wherein none of these units have an organic group containing an epoxy or oxetane ring; an acid catalyst or salt thereof in an amount of 0.1 to 10 parts by mass relative to 100 parts by mass of the resin, when the catalyst is a monovalent acid, an acid dissociation constant pKa is −0.5 or less in 25° C. water, or when a multivalent acid, an acid dissociation constant pKais −0.5 or less in 25° C. water; and a solvent, wherein the composition does not include a monomer crosslinking agent.

Resist underlayer film-forming composition

A composition for forming a resist underlayer film that enables the formation of a desired resist pattern; and a method for producing a resist pattern and a method for producing a semiconductor device, each of which uses said composition for forming a resist underlayer film. A resist underlayer film-forming composition includes a solvent and a polymer having a unit structure represented by formula (I): (in formula (I), A, A, A, A, A, and Aeach independently represent a hydrogen atom, a methyl group, or an ethyl group, Qrepresents a divalent organic group, Rrepresents a tetravalent organic group including a C6-40 aromatic ring structure, and Land Leach independently represent a hydrogen atom or a C1-10 alkyl group optionally substituted with a hydroxy group and optionally interrupted by an oxygen atom).

Resist underlayer film-forming composition including reaction product of acid dianhydride

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Toyama, Japan

Tomotada Hirohara