Shinko Electric Industries Co., Ltd.

Japan Electronic Materials Corporation

Tomoo Yamasaki

Akio Rokugawa

Kiyoshi Ooi

Noriyoshi Shimizu

Michio Horiuchi

Yasue Tokutake

Yasuyoshi Horikawa

Kiyoshi Oi

Yuichi Matsuda

Yuta Sakaguchi

Katsuya Fukase

Takashi Ito

Takahiro Iijima

Ryo Fukasawa

Akihito Takano

Chikaomi Mori

Yuichiro Shimizu

Kosuke Fujihara

Yukio Shimizu

Kazuhiro Fujita

An interconnect substrate includes an insulating layer and an interconnect layer formed on a surface of the insulating layer, wherein the surface of the insulating layer has grooves formed therein, the grooves having a meander shape on an order of nanometers in a plan view, and wherein the interconnect layer has anchor portions fitted into the grooves.

Interconnect substrate and method of making the same

A probe guide plate includes: a silicon substrate including one surface and the other surface opposite to the one surface; a through hole formed through the silicon substrate to extend from the one surface of the silicon substrate to the other surface of the silicon substrate; a silicon oxide layer formed on the one surface of the silicon substrate, the other surface of the silicon substrate, and an inner wall surface of the through hole; and a protective insulating layer formed on the silicon oxide layer. The protective insulating layer is formed on at least one of the one surface and the other surface of the silicon substrate via the silicon oxide layer, and partially formed on the inner wall surface of the through hole via the silicon oxide layer.

Probe guide plate having a silicon oxide layer formed on surfaces and on an inner wall of a through hole thereof, and a protective insulating layer formed on the silicon oxide layer, and probe apparatus including the probe guide plate

A wiring substrate includes a first insulation layer, a wiring layer formed on an upper surface of the first insulation layer, a barrier film that covers the upper surface of the first insulation layer, an upper surface of the wiring layer, and side surfaces of the wiring layer, and a second insulation layer that covers an upper surface of the barrier film and side surfaces of the barrier film. The barrier film is an alumina film containing carbon atoms, and the alumina film has a carbon atom content rate that is in the range of 0.2 atomic % to 3.6 atomic %.

Wiring substrate

One embodiment provides a wiring substrate including: a core substrate having an insulative base member, the insulative base member having a first surface and a second surface, a plurality of linear conductors penetrating through the insulative base member from the first surface to the second surface; an inorganic material layer joined to at least one of the first surface and the second surface of the insulative base member; and a penetration line penetrating through the inorganic material layer, wherein one end of the penetration line is electrically connected to a corresponding part of the linear conductors, without intervention of a bump.

Wiring substrate, its manufacturing method, and semiconductor device

A method of manufacturing a wiring substrate, includes forming a laminated body in which a nickel copper alloy layer is formed via an insulating resin layer, on a first wiring layer, forming a via hole reaching the first wiring layer in the nickel copper alloy layer and the insulating resin layer, applying a desmear process to an inside of the via hole, forming a seed layer on the nickel copper alloy layer and an inner surface of the via hole, forming a plating resist in which an opening portion is provided on a part containing the via hole, forming a metal plating layer in the opening portion in the plating resist by an electroplating, removing the plating resist, and forming a second wiring layer by etching the seed layer and the nickel copper alloy layer while using the metal plating layer as a mask.

Wiring substrate and method of manufacturing the same

A wiring substrate includes a composite substrate including an oxidized aluminum substrate portion in which a large number of penetration conductors penetrating in a thickness direction are provided, and a frame-like aluminum substrate portion provided around the oxidized aluminum substrate portion, and a wiring layer of n layers (n is an integer of 1 or more) connected to the penetration conductors.

A capacitor includes a dielectric substrate and a large number of filamentous conductors formed to penetrate through the dielectric substrate in a thickness direction thereof. An electrode is connected to only respective one ends of a plurality of filamentous conductors constituting one of groups each composed of a plurality of filamentous conductors. The electrode is disposed in at least one position on each of both surfaces of the dielectric substrate, or in at least two positions on one of the surfaces. Further, an insulating layer is formed on each of both surfaces of the dielectric substrate so as to cover regions between the electrodes, and a conductor layer is formed on the corresponding insulating layer integrally with a desired number of electrodes.

Capacitor containing a large number of filamentous conductors and method of manufacturing the same

A wiring board includes a substrate having a surface made of an insulating resin. An adhesion layer is formed on the substrate. A wiring layer is formed on the adhesion layer. The adhesion layer is formed by a nitrided NiCu alloy containing nitrogen therein. A nitrogen content of the nitrided NiCu alloy is within a range from 1 atoms % to 5 atoms %.

Wiring board and manufacturing method thereof

A wiring board includes a core substrate including an insulation base member; linear conductors configured to pierce from a first surface of the insulation base member to a second surface of the insulation base member; a ground wiring group including a first ground wiring formed on the first surface of the core substrate, and a belt-shaped second ground wiring formed on the second surface of the core substrate and electrically connected to the first ground wiring by way of a part of the linear conductors; and an electric power supply wiring group including a first electric power supply wiring formed on the first surface, and a second electric power supply wiring formed on the second surface and electrically connected to the first electric power supply wiring by way of a part of the plural linear conductors.

Wiring board having piercing linear conductors and semiconductor device using the same

In a semiconductor device, a substrate includes a plurality of line conductors which penetrate the substrate from a top surface to a bottom surface of the substrate. A semiconductor chip is secured in a hole of the substrate. A first insulating layer is formed on the top surfaces of the substrate and the semiconductor chip. A first wiring layer is formed on the first insulating layer and electrically connected via through holes of the first insulating layer to the semiconductor chip and some line conductors exposed to one of the through holes. A second insulating layer is formed on the bottom surfaces of the substrate and the semiconductor chip. A second wiring layer is formed on the second insulating layer and electrically connected via a through hole of the second insulating layer to some line conductors exposed to the through hole.

Semiconductor device and method of manufacturing semiconductor device

A manufacturing method of a wiring board includes a sticking layer forming step; a resist film forming step of forming a resist film on an upper surface of the sticking layer, the resist film having an opening exposing the upper surface of the sticking layer; a metal layer forming step of forming a metal layer, so as to cover an upper surface of the resist film and cover a side surface of the resist film and the upper surface of the sticking layer forming the opening for forming the wiring; a plating film forming step of filling with a plating film the opening for forming the wiring; a metal layer and plating film removing step; a resist film removing step; and a sticking layer removing step of removing the sticking layer of an unnecessary part not covered with the metal layer, after the resist film removing step.

Manufacturing method of wiring board

The present invention discloses a method of manufacturing a wiring substrate to which a semiconductor chip mounted. The method includes the steps of forming a base, forming a peeling layer on the base, forming a capacitor having a plurality of layers on the peeling layer, and forming a wiring part in the capacitor for connecting the capacitor to the semiconductor chip.

Method of manufacturing wiring substrate to which semiconductor chip is mounted

In a capacitor device of the present invention includes a substrate, a plurality of lower electrodes formed on the substrate, a plurality of dielectric films formed on a plurality of lower electrodes respectively in a state that the dielectric films are separated mutually, and upper electrodes formed on a plurality of dielectric films respectively, a plurality of capacitors each composed of the lower electrode, the dielectric film, and the upper electrode are arranged on the substrate respectively, and each of the dielectric films in a plurality of capacitors has a different film thickness.

Method of manufacturing capacitor device

A capacitor parts of the present invention, includes a substrate, a plurality of capacitor elements arranged on the substrate and composed of a lower electrode, a dielectric layer, and an upper electrode respectively, a lower electrode rewiring layer formed over the plurality of capacitor elements and connected electrically to lower electrodes of the plurality of capacitor elements respectively to act as a common electrode, and an upper electrode rewiring layer formed over the plurality of capacitor elements and connected electrically to upper electrodes of the plurality of capacitor elements respectively to act as another common electrode, wherein the plurality of capacitor elements are connected electrically in parallel in a state of the capacitor parts, thus, the impedance is reduced in a wide high-frequency band by changing impedances among the plurality of capacitor elements.

Capacitor parts

A method of manufacturing a wiring board is disclosed. The wiring board has: a capacitor, having multiple electrode layers which oppose each other with a dielectric layer in between, that is connected to a semiconductor chip; one or more via wirings which pierce the electrode layers and which are connected to the semiconductor chip, and pattern wirings connected to the via wirings. The method includes: forming the electrode layers, each having one or more through holes which the via wirings pierce, and the dielectric layer, and forming the capacitor; installing the capacitor such that the capacitor opposes the pattern wirings over an insulating layer; forming one or more via holes which reach the pattern wirings from the through holes; and forming the via wiring in the via hole.

Growing community of inventors

Nagano, Japan

Tomoo Yamasaki