Renesas Technology Corp.

Hitachi Ulsi Systems Co., Ltd.

Hitachi, Ltd.

Renesas Eastern Japan Semiconductor, Inc.

Hitachi Hokkai Semiconductor Ltd.

Hitachi Microcomputer

Tomoo Matsuzawa

Toshiaki Morita

Takafumi Nishita

Yasuyuki Nakajima

Naoki Kawanabe

Hiromichi Suzuki

Takashi Nakajima

Kazunari Suzuki

Masahiro Ichitani

Naotaka Tanaka

Masashi Sahara

Fujio Ito

Ryo Haruta

Junichi Arita

Akihiko Iwaya

Akihiko Kameoka

Seiichi Tomoi

Koji Shida

Ken Okutani

Kenji Hanada

Takuji Ide

Masaki Nakanishi

Kazutoshi Takashima

Toru Ishida

Tetsuharu Urawa

A semiconductor device with improved the adhesion between bonding pads and ball portions of gold wires is provided to improve the reliability of a semiconductor device. About 1 wt. % of Pd is contained in gold wires for connection between electrode pads formed on a wiring substrate and electrode pads (exposed areas of a top layer wiring formed mainly of Al) formed on a semiconductor chip. In bonded portions between the electrode and ball portions of the gold wires, an interdiffusion of Au and Al is suppressed to prevent the formation of AuAl after PCT (Pressure Cooker Test). Thus, a desired bonding strength is obtained even when the pitch of the electrode pads is smaller than 65 &#x3bc;m and the diameter of the ball portion is smaller than 55 &#x3bc;m or the diameter of the wire portion of each gold wire is not larger than 25 &#x3bc;m.

Semiconductor device having improved adhesion between bonding and ball portions of electrical connectors

The cost of a semiconductor device is to be reduced. An electrical connection between a first semiconductor chip and a second semiconductor chip stacked on the first semiconductor chip is made through an inner lead portion of a lead disposed at a position around the first semiconductor chip and two bonding wires.

Semiconductor device having stacked semiconductor chips sealed with a resin seal member

A method is provided to improve the adhesion between bonding pads and ball portions of gold wires to improve the reliability of a semiconductor device. About 1 wt. % of Pd is contained in gold wires for connection between electrode pads formed on a wiring substrate and electrode pads (exposed areas of a top layer wiring formed mainly of Al) formed on a semiconductor chip. In bonded portions between the electrode and ball portions of the gold wires, an interdiffusion of Au and Al is suppressed to prevent the formation of AuAl after PCT (Pressure Cooker Test). Thus, a desired bonding strength is obtained even when the pitch of the electrode pads is smaller than 65 &#x3bc;m and the diameter of the ball portion is smaller than 55 &#x3bc;m or the diameter of the wire portion of each gold wire is not larger than 25 &#x3bc;m.

Method of manufacturing a semiconductor device to provide improved adhesion between bonding pads and ball portions of electrical connectors

Provided is a semiconductor device comprising a first metal film formed above a semiconductor chip, a ball portion formed over said first metal film and made of a second metal, and an alloy layer of said first metal and said second metal which alloy layer is formed between said first metal film and said ball portion, wherein said alloy layer reaches the bottom of said first metal film, and said ball portion is covered with a resin; and a manufacturing method thereof. The present invention makes it possible to improve adhesion between the bonding pad portion and ball portion of a bonding wire over an interconnect, thereby improving the reliability of the semiconductor device.

Semiconductor device and a method of manufacturing the same

A sensor chip and a lens mount accommodating therein the sensor chip are mounted on a surface of a wiring substrate and a lens holder accommodating a lens therein is coupled with the lens mount. On a rear surface of the wiring substrate, a logic chip, a memory chip and a passive component are mounted and they are sealed with a seal resin. An electrode pad of the sensor chip is electrically connected to an electrode on the surface of the wiring substrate via a bonding wire but a stud bump is also formed on the electrode at the surface of the wiring substrate and this stud bump is connected with the bonding wire. On the surface of the wiring substrate, a flexible substrate is bonded with an anisotropic conductive film and a bonding material. When a camera module is to be manufactured, the surface side of the wiring substrate is assembled after the rear surface side of the wiring substrate is assembled.

Manufacturing method of solid-state image sensing device

A semiconductor device comprising a plurality of wires for electrically connecting a plurality of electrode pads arranged on a main surface of a semiconductor chip along one side of the semiconductor chip to a plurality of connecting portions arranged on the main surface of a wiring substrate along one side of the semiconductor chip, respectively, wherein second wires out of the plural wires consisting of first and second wires adjacent to each other have a larger loop height than the first wires, one end portions of the second wires are connected to the electrode pads at positions farther from one side of the semiconductor chip than the one end portions of the first wires, and the other end portions of the second wires are connected to the connecting portions at positions farther from one side of the semiconductor chip than the other end portions of the first wires.

Semiconductor device with alternate bonding wire arrangement

A highly reliable semiconductor device provided herein can prevent a junction between a pad and a wire from coming off, and pads from peeling off an underlying insulating layer on the interface thereof. The semiconductor device has plugs formed in a region in which an electrode pad is formed over a substrate. The plugs protrude into the electrode pad.

Semiconductor device and method of manufacturing same

Disclosed is a resin-molded type semiconductor device having a thin package while avoiding short-circuit of wires with a common inner lead. In the construction thereof, a common inner lead constituted by a thin metal sheet is fixed onto a circuit-forming surface of a rectangular semiconductor chip substantially in parallel with longer sides of the chip and substantially in a central region of the chip, and a plurality of inner leads for signals, which are in the form of a frame, are stacked and fixed onto the common inner lead; then these components are molded with resin.

Semiconductor device having stacked lead structure

Growing community of inventors

Tokyo, Japan

Tomoo Matsuzawa