Denso Corporation

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Taiyo Nippon Sanso Corporation

Mitsubishi Denki Kabushiki Kaisha

Sumitomo Mitsubishi Silicon Corporation

Mitsubishi Materials Silicon Corporation

Tomonori Yamaoka

Syouji Nogami

Shoichi Yamauchi

Hiroyuki Hasegawa

Hiroshi Masusaki

Yoshio Ishihara

Takumi Shibata

Hitoshi Yamaguchi

Toshiyuki Morishita

Nobuhiro Tsuji

Tomoatsu Makino

Hiroki Tokunaga

Katsumasa Suzuki

Takayuki Satou

Yasuhiro Kimura

Hidekazu Yamamoto

Kazuhito Matsukawa

Shouichi Yamauchi

Hiroshi Koya

Hiroshi Shinyashiki

A semiconductor substrate is provided in which an alignment mark is formed that can be used for an alignment even after the formation of an impurity diffused layer by the planarization of an epitaxial film. A trench is formed in an alignment region of an N-type layer formed on an N-type substrate. This trench is used to leave voids after the formation of a P-type epitaxial film on the N-type layer. Then, the voids formed in the N-type layer can be used as an alignment mark. Thus, such a semiconductor substrate can be used to provide an alignment in the subsequent step of manufacturing the semiconductor apparatus. Thus, the respective components constituting the semiconductor apparatus can be formed at desired positions accurately.

Method for manufacturing semiconductor substrate

A semiconductor substrate is provided in which an alignment mark is formed that can be used for an alignment even after the formation of an impurity diffused layer by the planarization of an epitaxial film. A trench is formed in an alignment region of an N-type substrate. This trench is used to leave voids after the formation of an N-type layer. Then, the voids formed in the N-type substrate can be used as an alignment mark. Thus, such a semiconductor substrate can be used to provide an alignment in the subsequent step of manufacturing the semiconductor apparatus. Thus, the respective components constituting the semiconductor apparatus can be formed at desired positions accurately.

A method for manufacturing a semiconductor device includes the steps of: forming a trench in a semiconductor substrate; and forming an epitaxial film on the substrate including a sidewall and a bottom of the trench so that the epitaxial film is filled in the trench. The step of forming the epitaxial film includes a final step before the trench is filled with the epitaxial film. The final step has a forming condition of the epitaxial film in such a manner that the epitaxial film to be formed on the sidewall of the trench has a growth rate at an opening of the trench smaller than a growth rate at a position of the trench, which is deeper than the opening of the trench.

Method for manufacturing semiconductor device

A semiconductor device is provided, which includes a substrate; a P-N column layer disposed on the substrate; a second conductivity type epitaxial layer disposed on the P-N column layer. The P-N column layer includes first conductivity type columns and second conductivity type columns, which are alternately arranged. Each column has a tapered shape. A portion of the first conductivity type column located around the substrate has a smaller impurity concentration than another portion of the first conductivity type column located around the second conductivity type epitaxial layer. A portion of the second conductivity type column located around the substrate has a larger impurity concentration than another portion of the first conductivity type column located around the second conductivity type epitaxial layer.

Semiconductor device having P-N column layer and method for manufacturing the same

A method for manufacturing a semiconductor device includes steps of: forming a trench on a main surface of a silicon substrate; forming a first epitaxial film on the main surface and in the trench; and forming a second epitaxial film on the first epitaxial film. The step of forming the first epitaxial film has a first process condition with a first growth rate of the first epitaxial film. The step of forming the second epitaxial film has a second process condition with a second growth rate of the second epitaxial film. The second growth rate is larger than the first growth rate.

Method for manufacturing semiconductor device and epitaxial growth equipment

A method for manufacturing a semiconductor device includes steps of: forming a first epitaxial film on a silicon substrate; forming a trench in the first epitaxial film; and forming a second epitaxial film on the first epitaxial film and in the trench. The step of forming the second epitaxial film includes a final step, in which a mixed gas of a silicon source gas and a halide gas is used. The silicon substrate has an arsenic concentration defined as &#x3b1;. The second epitaxial film has an impurity concentration defined as &#x3b2;. The arsenic concentration and the impurity concentration has a relationship of: &#x3b1;&#x2266;3&#xd7;10&#xd7;ln(&#x3b2;)&#x2212;1&#xd7;10.

Semiconductor device, method for manufacturing the same and method for evaluating the same

Closure at the opening of a trench with an epitaxial film is restrained, and thereby, filling morphology in the trenches is improved. A method for manufacturing a semiconductor substrate includes a step for growing an epitaxial layeron the surface of a silicon substrate, a step of forming a trenchin this epitaxial layer, and a step of filling the inside of the trenchwith the epitaxial film, wherein mixed gas made by mixing halogenoid gas into silicon source gas is circulated as material gas in filling the inside of the trench with the epitaxial film, and when the standard flow rate of the halogenoid gas is defined as Xslm and the film formation speed of the epitaxial film formed by the circulation of the silicon source gas is defined as Y&#x3bc;m/min, in the case when the aspect ratio of the trench is less than 10, an expression Y&#x3c;0.2X+0.10 is satisfied, and in the case that the aspect ratio of the trench is between 10 and less than 20, an expression Y&#x3c;0.2X+0.05 is satisfied, and in the case that the aspect ratio of the trench is 20 or more, an expression Y&#x3c;0.2X is satisfied.

Manufacturing method of semiconductor substrate

A semiconductor manufacturing method whereby reactive gas processing such as selective epitaxial growth can be carried out with high precision by correctly adjusting conditions during processing is performed by a semiconductor manufacturing apparatus which can restrict increases in the moisture content, prevent heavy metal pollution and the like, and investigate the correlation between moisture content in the process chamber and outside regions. The moisture content in a reaction chamber and in a gas discharge system of the reaction chamber are measured when a substrate is provided, and the conditions for reactive gas processing are adjusted based on the moisture content. Furthermore, the moisture content in the airtight space is measured by a first moisture measuring device which is connected to the airtight space, and thereafter, the substrate is inserted and ejected by a substrate carrying system, and a reactive gas is processed while measuring the moisture content in the reaction chamber by a second moisture measuring device, which is connected to the reaction chamber, after the moisture content in the airtight space is measured.

Semiconductor manufacturing method and semiconductor manufacturing apparatus

The present invention discloses a CVD apparatus which, together with being able to efficiently perform purging treatment after maintenance, uses for the purge gas a mixed gas of a gas having high thermal conductivity and an inert gas during heated flow purging treatment after maintenance to perform startup of the CVD apparatus while reducing the amount of time required for purging treatment. Purging treatment before semiconductor film formation is performed by repeating the pumping of a vacuum and the introduction of inert gas a plurality of times. In addition, in order to judge suitable maintenance times of semiconductor production apparatuses that perform corrosive gas treatment in a reaction chamber, the moisture concentration in reaction chamber is measured with moisture meter connected to the reaction chamber when performing the corrosive gas treatment, and maintenance times of the semiconductor production apparatus are determined according to changes in the moisture concentration when corrosive gas treatment is performed repeatedly. In addition, in order to measure the moisture of corrosive gas during processing while preventing obstruction of piping in a moisture monitoring apparatus and semiconductor production apparatus equipped therewith, a moisture monitoring apparatus, which is equipped with a pipe, of which one end is connected to reaction chamber into which corrosive gas flows, and a moisture meter connected to the other end of that pipe which measures the moisture contained in the corrosive gas introduced from the reaction chamber, is at least equipped with pipe heating mechanism that heats the pipe.

Method of purging CVD apparatus and method for judging maintenance of times of semiconductor production apparatuses

Semiconductor manufacturing apparatus having a moisture measuring device

A CVD apparatus is able to efficiently perform purging treatment after maintenance by using for the purge gas a mixed gas of a high thermal conductivity and an inert gas. Purging treatment before semiconductor film formation is performed by repeating the pumping of a vacuum and the introduction of inert gas a plurality of times. In addition, in order to judge suitable maintenance times, the moisture concentration in reaction chamber is measured with a moisture meter connected to the reaction chamber when performing a corrosive gas treatment, and maintenance times are determined according to changes in the moisture concentration when corrosive gas treatment is performed repeatedly. In addition, in order to measure the moisture of corrosive gas while preventing obstruction of piping in a moisture monitoring apparatus, a moisture monitoring apparatus, including a pipe, of which one end is connected to reaction chamber into which corrosive gas flows, and a moisture meter connected to the other end which measures the moisture contained in the corrosive gas introduced from the reaction chamber, is equipped with a pipe beating mechanism.

CVD apparatus equipped with moisture monitoring

A substrate having a surface on which silicon is epitaxially grown; wherein the substrate is cut from an oxygen induced stacking fault generation area of a single crystal silicon rod grown by the Czochralski method.

Growing community of inventors

Tokyo, Japan

Tomonori Yamaoka