Renesas Technology Corp.

Hitachi, Ltd.

Renesas Electronics Corporation

Murata Manufacturing Co., Ltd.

Hitachi Engineering Co., Ltd.

Htachi, Ltd.

Tomonori Tanoue

Hidetoshi Matsumoto

Masami Ohnishi

Kazuhiro Mochizuki

Kiichi Yamashita

Susumu Takahashi

Kenji Sekine

Isao Ohbu

Katsuhiko Mitani

Osamu Kagaya

Satoshi Tanaka

Hiroshi Masuda

Chushiro Kusano

Chushirou Kusano

Hiroyuki Uchiyama

Yasunari Umemoto

Tohru Nakamura

Masao Yamane

Shizuo Kondo

Kenichi Tanaka

Atsushi Kurokawa

Taizo Yamawaki

Yoshinori Imamura

Toshiyuki Usagawa

Kenji Hiruma

Chisaki Takubo

Hiroshi Mizuta

Shigeo Goto

Masahiko Kawata

Koji Hirata

Kenji Sasaki

Takeshi Kato

Takeshi Sato

Katsuyoshi Washio

Hideyuki Ono

Fumio Murai

Akira Kuriyama

Yoshihisa Fujisaki

Kazuaki Hori

Takahiro Onai

Tomoyoshi Mishima

Masayoshi Kobayashi

Masayoshi Saito

May Suzuki

Sakae Kikuchi

Takashi Kitahara

Tsutomu Kobori

Mitsuo Takeda

Hiroshi Ohta

Kiyoshi Ouchi

Hiroji Yamada

Hiroshi Miyazaki

Yasuo Ohsone

Toshifumi Makino

Tooru Haga

A technology is provided so that RF modules used for cellular phones etc. can be reduced in size. Over a wiring board constituting an RF module, there are provided a first semiconductor chip in which an amplifier circuit is formed and a second semiconductor chip in which a control circuit for controlling the amplifier circuit is formed. A bonding pad over the second semiconductor chip is connected with a bonding pad over the first semiconductor chip directly by a wire without using a relay pad. In this regard, the bonding pad formed over the first semiconductor chip is not square but rectangular (oblong).

RF module including control IC without the aid of a relay pad

Disclosed are a semiconductor integrated circuit device and a wireless communication system that are capable of improving reception sensitivity. The wireless communication system includes, for instance, a first duplexer, a second duplexer, a first low-noise amplifier circuit, and a second low-noise amplifier circuit. A transmission band compliant with a communication standard is split into two segments for use, namely, low- and high-frequency transmission bands. A reception band compliant with the communication standard is split into two segments for use, namely, low- and high-frequency reception bands. The first duplexer uses the low-frequency transmission band and low-frequency reception band as passbands. The second duplexer uses the high-frequency transmission band and high-frequency reception band as passbands. A signal received from the first duplexer and a signal received from the second duplexer are respectively amplified by the first and the second low-noise amplifier circuits, which are respectively provided to handle such signals.

Semiconductor integrated circuit device and wireless communication system

A high frequency power amplifier maintains an excellent linearity regardless of a fluctuation of a load impedance and is downsized. The high frequency power amplifier detects an AC voltage amplitude at an output terminal of a final amplification stage transistor, and suppresses an input signal amplitude of a power amplifier when the voltage amplitude exceeds a predetermined threshold value.

High frequency power amplifier, transmitter and mobile communication terminal using the power amplifier

An RF power amplifier has a final-stage amplifier stage which generates an RF transmit output signal, a signal detector which detects an RF transmit output level, a first detector, a second detector and a control circuit. The final-stage amplifier stage includes a transistor and a load element and performs saturation type nonlinear amplification and non-saturation type linear amplification. The first detector and the control circuit maintain the RF transmit output signal approximately constant with respect to a variation in load at an antenna at the saturation type nonlinear amplification. The second detector and the control circuit reduce an increase in the output voltage of the final stage transistor with respect to an overload state of the antenna at the non-saturation type linear amplification.

Radio frequency (RF) power amplifier and RF power amplifier apparatus

A high-frequency power amplifier comprising: a plurality of power amplifiers arranged in parallel; an inductance element inserted in series in an input signal line of said each power amplifier; an input matching circuit for performing matching of inputs of a parallel connection which connected each series connection of said power amplifier and said inductance element in parallel; an output matching circuit for performing matching of outputs of the parallel connection; and a control unit for controlling said power amplifiers in such a manner that one of said power amplifiers is always brought to an operation condition and the remainder of said power amplifiers are brought to an operation or non-operation condition.

High-frequency power amplifier and radio communication equipment using the same

The present invention provides a semiconductor device which comprises active components, passive components, wiring lines and electrodes and are satisfactory in terms of mechanical strength, miniaturization and thermal stability. In the semiconductor device, openings are formed just below active components. These openings are filled with conductor layers. Conductor layers are also formed where openings are not formed.

Semiconductor HBT MMIC device and semiconductor module

The invention provides a wide-band, low-noise, and small-sized high frequency power amplifier that has small temperature dependence of the gain and is excellent in input matching. A parallel circuit consisting of a resistor whose resistance depends strongly on temperature and a conventional resistor is inserted serially into a signal path in an input matching circuit of an amplification unit, and resistances of the resistors are set to appropriate values, for example, about 2/3 times an input impedance of the amplification unit.

High frequency power amplifier

For use in an amplifier configuration including a high-power amplifier and a low-power amplifier which are always interconnected in terms of high frequencies and between which switching is made using no switches, a highly stable high-frequency power amplifier module with high isolation between the amplifiers is provided. To reduce wrapping around from a low-power amplifier section in an activated state to a high-power amplifier section in a deactivated state or from the high-power amplifier section in an activated state to the low-power amplifier section in a deactivated state, an input matching circuit having high isolation characteristics is included in an input matching circuit portion which does not have much to do with amplifier efficiency. Switching of each of the amplifier sections between an activated state and a deactivated state is effected by control using bias input terminals.

High-frequency power amplifier module

Disclosed is a power amplifier having highly stable and excellent controllability, and having low noise in comparison with conventional power amplifiers. With the power amplifier, a differential amplifier made up of transistors Q, Qis provided in the initial stage thereof, and baluns doubling as inter-stage matching circuits, comprised of Cp, Cp, Lp, and Ct, Ct, Lt, respectively, are provided between the initial stage, and a second stage while an unbalanced single-ended circuit is provided in the second stage. The differential amplifier has an emitter-coupled type configuration for coupling both emitters with each other, and output control of the amplifier in the initial stage is executed by varying current of a current source coupled to both the emitters.

In a base-bias-control-type high-frequency power amplifier with a plural stage configuration, a rising voltage of a base bias current supplied to an initial stage transistor is made lower than a rising voltage of a base bias current supplied to a second stage transistor by a bias circuit, and a difference between the both voltages is set to be smaller than a base-emitter voltage of an amplifying stage transistor. Also, a rising voltage of a base bias current supplied to a third stage transistor is made equal to the rising voltage of the base bias current supplied to an initial stage transistor. Accordingly, a technology capable of improving the power control linearity can be provided in a high-frequency power amplifier used in a polar-loop transmitter or the like.

High-frequency power amplifier

This invention is intended to provide an HBT capable of achieving, if the HBT is a collector-up HBT, the constriction of the emitter layer disposed directly under an external base layer, and reduction in base-emitter junction capacity, or if the HBT is an emitter-up HBT, reduction in base-collector junction capacity. For the collector-up HBT, window structures around the sidewalls of a collector are used to etch either the emitter layer disposed directly under the external base layer, or an emitter contact layer For the emitter-up HBT, window structures around the sidewalls of an emitter are used to etch either the collector layer disposed directly under the external base layer, or a collector contact layer. In both HBTs, the external base layer is supported by a columnar structure to ensure mechanical strength.

Semiconductor device and method of manufacturing the same

A radio frequency power amplifier module that brings sufficient attenuation to a radio frequency signal in a bias supply line connecting a bias control part and a radio frequency power amplifier part without increasing module substrate area is aimed. At least one bonding padhaving a capacitance component to a ground and stitch structure inductancescomposed of a bonding wireprovided via the bonding pad are provided in the bias supply line connecting the bias control part and the radio frequency power amplifier part.

Radio frequency power amplifier module

A linear system and an EER system are used in combination such that the EER system can also be used in a cellular phone with a wide output dynamic range. In the EER system, linear control of an amplifier becomes difficult in a low output range. Thus, use of the EER system is limited to a high output range, and the linear system is used in the low output range as in the past. A power efficiency is improved while requirements of linearity are satisfied by this structure. An effective circuit structure is proposed for a switching control system for two systems. In addition, an up-converter is constituted in combination with a step-down element with high responsiveness, whereby a power supply voltage control circuit for the EER system with a wide control range and high responsiveness is provided.

Wireless communication apparatus

Growing community of inventors

Machida, Japan

Tomonori Tanoue