Panasonic Intellectual Property Management Co., Ltd.

Sanyo Electric Co., Ltd.

Semiconductor Components Industries, LLC

Tomonori Tabe

Hiroyuki Kannou

Shigeharu Taira

Yukihiro Yoshimine

Yoshikazu Yamaoka

Kazunori Fujita

Satoru Shimada

Koutarou Sumitomo

Yosuke Ishii

Yousuke Ishii

Kengo Matsune

Yu Maruyama

Toshiyuki Sakuma

Yoshiyuki Kudoh

Yoshiyuki Kudo

In the solar cell module including a plurality of solar cells interconnected with wiring members, each of the solar cells includes a plurality of front-side finger electrodes that are disposed on a light-receiving surface of the solar cell and connected with tabs and a plurality of rear-side finger electrodes that are disposed on a rear surface of the solar cell and connected with tabs. Rear-side auxiliary electrode sections are arranged in regions, which is wider than the front-side finger electrodes, on the rear surface opposite to regions where the front-side finger electrodes are present.

Solar cell module

An aspect of the invention is a method of manufacturing a solar cell module in which wiring members are electrically connected to front and back electrodes on front and back sides of a solar cell with resin adhesion films. The total area of the front electrode is smaller than that of the back electrode. The method includes: arranging the resin adhesion films on the front and back electrodes; arranging a first cushion sheet and a lower press member below the lower resin adhesion film and arranging a second cushion sheet being thicker than the first cushion sheet and an upper press member above the upper resin adhesion film; pressing the press members against each other thereby bonding the resin adhesion films to the solar cell; and releasing the pressure to the press members and moving the first and second cushion sheets away from the solar cell.

Method of manufacturing solar cell module

A solar module is provided which has improved durability. A third wiring member () includes a first portion (), a second portion (), and a third portion (). In the first portion (), metal foil () faces a solar cell (). The first portion () is electrically connected to the solar cell (). The second portion () is arranged on the solar cell () with the metal foil () facing the side opposite to the solar cell (). The third portion () connects the first portion () and the second portion (). A first wiring member () electrically connects the second portions () of adjacent solar cell strings () to each other. The solar module () also includes an insulating sheet (). The insulating sheet () is arranged between the first wiring member () and the solar cell ().

Solar module

A method includes a first bonding step of bonding a first main surface of a first solar cell and one side portion of a first wiring member to each other in such a way that the first main surface of the first solar cell and the one side portion are heated and pressed against each other by heated first and second tools in a state where the first main surface of the first solar cell and the one side portion face each other with the resin adhesive interposed therebetween. The first bonding step is performed with the first tool disposed in such a way that, in an extending direction of the first wiring member, both end portions of the first tool are located outside both ends of a portion of the first wiring member, the portion facing the first solar cell with the resin adhesive interposed therebetween.

Solar battery module

Solar battery

The invention provides a trench gate type transistor in which the gate capacitance is reduced, the crystal defect is prevented and the gate breakdown voltage is enhanced. Trenches are formed in an N&#x2212; type semiconductor layer. A uniformly thick silicon oxide film is formed on the bottom of each of the trenches and near the bottom, being round at corner portions. A silicon oxide film is formed on the upper portion of the sidewall of each of the trenches, which is thinner than the silicon oxide film and round at corner portions. Gate electrodes are formed from inside the trenches onto the outside thereof. The thick silicon oxide film reduces the gate capacitance, and the thin silicon oxide film on the upper portion provides good transistor characteristics. Furthermore, with the round corner portions, the crystal defect does not easily occur, and the gate electric field is dispersed to enhance the gate breakdown voltage.

Trench gate type transistor

The invention provides a trench gate type transistor in which the gate leakage current is prevented and the gate capacitance is reduced. A trench is formed in an N&#x2212; type semiconductor layer. A thin silicon oxide film is formed on a region of the N&#x2212; type semiconductor layer for the active region of the transistor in the trench. On the other hand, a silicon oxide film which is thicker than the silicon oxide film is formed on a region not for the active region. Furthermore, a leading portion extending from inside the trench onto the outside thereof forms a gate electrode contacting the silicon oxide film. This provides a long distance between the gate electrode at the leading portion and the corner portion of the N&#x2212; type semiconductor layer, thereby preventing the gate leakage current and reducing the gate capacitance.

After overlaying a conductive adhesive film and the wiring material on an electrode of a solar cell and temporarily fixing the wiring material to the solar cell by pressure bonding under first temperature/pressurizing condition, the quality of the temporarily fixed solar cell is inspected, a solar cell determined to be defective in the inspection step is removed and the defective solar cell is replaced with a non-defective solar cell. Then, the wiring material is temporarily fixed to the non-defective solar cell by pressure bonding the wiring material with the conductive adhesive film interposed therebetween, under the first temperature/pressurizing condition and the wiring materials are fixed to the solar cell by thermally setting the conductive adhesive film under second temperature condition to apply heat higher than the first temperature condition.

Manufacture method for photovoltaic module including inspection and repair

A semiconductor device that reduces the width of an isolation region between semiconductor elements. The semiconductor device includes a semiconductor substrate, an epitaxial layer formed on the semiconductor substrate, a buried layer formed between the semiconductor substrate and the epitaxial layer, a first trench formed in the epitaxial layer so as to surround the buried layer, and an insulation film formed in the first trench.

Growing community of inventors

Gifu, Japan

Tomonori Tabe