Fuji Electric Co., Ltd.

Fuji Electric Device Technology Co., Ltd.

Fuji Electric Technology Co., Ltd.

Tomonori Seki

Tadanori Yamada

Toshio Denta

Takeshi Yokoyama

Tadahiko Sato

Shinichiro Matsunaga

Jun Yabuzaki

Atsushi Maruyama

Yoshikiyo Usui

Osamu Hirohashi

Masaaki Ochiai

A semiconductor device can reduce the number of bonding wires. The semiconductor device includes two or more semiconductor elements each of which has electrodes on a first main surface and a second main surface, an electrode plate that has one surface which is bonded to electrodes on the first main surfaces of the semiconductor elements, with a first bonding material layer interposed therebetween, and extends over the electrodes on the first main surfaces of the two or more semiconductor elements, and a conductive plate that includes a first lead terminal and a semiconductor element bonding portion which is bonded to electrodes on the second main surfaces of the semiconductor elements. A second bonding material layer is interposed therebetween, and is connected to the electrodes on the second main surfaces of the two or more semiconductor elements.

Semiconductor device and method for manufacturing the same

A miniaturized semiconductor device includes a frame body having an opening region formed in a central portion, an insulating substrate which is provided in the opening region of the frame body and on which semiconductor chips are mounted, lead portions, each including an inclined portion that is at least partially exposed to the opening region formed in the frame body and extends so as to be inclined with respect to an end surface forming the opening region, and a bonding wire that is bonded between the lead portion and the semiconductor chip by ultrasonic bonding.

Lead portion of semiconductor device

Semiconductor device

A semiconductor device includes a plurality of semiconductor elements; first semiconductor chips including first semiconductor elements, the first semiconductor elements being defined as semiconductor elements in the plurality of semiconductor elements and having a current flowing greater than that of the other semiconductor elements; second semiconductor chips having second semiconductor elements, the second semiconductor elements being defined as semiconductor elements in the plurality of semiconductor elements for controlling the first semiconductor elements; an insulating substrate having a first wiring pattern bonded with the first semiconductor chips; and an insulating member having a second wiring pattern mounted with the second semiconductor chips.

A semiconductor device includes an insulating circuit substrate mounted with at least one semiconductor element; a resin case having a bottom surface portion attached with the insulating circuit substrate and a side surface portion enclosing a periphery of the bottom surface portion; a lead molded integrally with the resin case and provided on a periphery of the insulating circuit substrate to be positioned on a surface of the bottom surface portion inside the resin case, the lead partially extending from inside the resin case to outside the resin case; and a sealing resin filled inside the resin case. A depressed portion is formed on two sides of the lead along a peripheral edge of the bottom surface portion inside the resin case.

A semiconductor device with an inductor device is small, thin, and low-cost. A laminated inductor is adhered fixedly onto a supporting conductive plate by Ag paste, and a semiconductor chip is adhered fixedly onto the laminated inductor via an insulating DAF tape. One end of the supporting conductive plate and a terminal electrode of the semiconductor chip are connected by a metal wire, and a plurality of terminal electrodes of the semiconductor chip and a plurality of external lead-out terminals are connected respectively by laterally extending metal wires. The entire structure is then sealed by a resin mold. By employing a laminated inductor and forming the metal wires to extend laterally in this manner, the thickness of the semiconductor device with an inductor can be reduced.

Semiconductor device with inductor

The electrode of a thin-type capacitor is connected to the rear surface of a p-type semiconductor substrate which is brought to a ground potential, by a conductive DAF (Die Attach Film) or by a conductive adhesive, and the electrodes of the front surface of the p-type semiconductor substrate are respectively connected with and stacked on the terminals of a thin-type inductor by bumps, whereby manufacturing costs can be reduced while the occurrence of noise can be suppressed and packaging area can be made small.

Composite semiconductor device

An inductor and a method of manufacture results in external electrodes that prevent generation of flashes. The inductor has a ferrite substrate, external electrodes, and a coil. The cross-sectional area of the external electrodes extending across the cutting line is reduced to suppress generation of flashes during the cutting process. Pairs of through-holes are formed at positions in line symmetry about the cutting line. A connection conductor is formed in each of the through-holes, and the external electrodes are formed on the front and back surfaces of the substrate, with the connection conductor connecting each of the pairs of external electrodes on the front and back surfaces. Through-holes can be oblong holes extending across the cutting line, and the external electrodes can extend away from the cutting line.

Growing community of inventors

Azumino, Japan

Tomonori Seki