Other

Renesas Electronics Corporation

Hitachi Ulsi Systems Co., Ltd.

Hitachi, Ltd.

Hitachi Ulsi Co., Ltd.

Tomonori Saeki

Takuya Futase

Mieko Kashi

Shigeru Ohno

Yoshitaka Nakamura

Masaru Izawa

Hitoshi Oka

Kazuo Nojiri

Takashi Yunogami

Susumu Aiuchi

Sukeyoshi Tsunekawa

Yoichi Takahara

Miwako Nakahara

Toshiyuki Arai

Fumio Morita

Masataka Fujiki

Akinobu Yamaoka

Yuichirou Tanaka

Noriyuki Ohroku

In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual wafers passing through a wafer process, removing the Ru film from outer edge portions of a device side and a back side of individual wafers, on which said Ru film has been deposited, by means of an aqueous solution containing orthoperiodic acid and nitric acid, and subjecting said individual wafers, from which said Ru film has been removed, to a lithographic step, an inspection step or a thermal treating step that is in common use relation with a plurality of wafers belonging to lower layer steps (an initial element formation step and a wiring step prior to the formation of a gate insulating film).

Mass production method of semiconductor integrated circuit device and manufacturing method of electronic device

With a view to providing a technique for highly-selective etching of Ru (ruthenium) using a photoresist as an etching mask, an Ru-film, which is an lower electrode material deposited on the side walls and bottom surface of a hole, is covered with a photoresist film, followed by isotropic dry etching in a gas atmosphere containing an ozone gas, whereby a portion of the Ru film outside of the hole is removed.

Manufacturing method of semiconductor integrated circuit device

At a time of cleaning a plate-like part such as a wafer or the like while rotating, for the purpose of reducing a contamination, a damage and an unevenness of process of the plate-like part which are caused by an amount of charged electricity of the plate-like part, chuck pins (chuck members) which chuck the plate-like part such as the wafer or the like and upper and lower cleaning plates and which oppose to the plate-like part are constituted by a resin material containing carbon powders, and a desired potential difference is applied to a portion between the plate-like part and the cleaning plates by a voltage control unit which is provided in an outer portion.

Cleaning apparatus for plate-like part and method thereof

Growing community of inventors

Yokohama, Japan

Tomonori Saeki