Sumco Corporation

Tomonori Miura

Hiroto Fukushima

Shunsuke Mikuriya

Kazushige Takaishi

Akira Horiguchi

Masayuki Ishibashi

Ken Isobe

Mami Kubota

Shoji Nakao

Takeshi Ezaki

Fumiya Fukuhara

Yasuhiko Tsukanaka

Provided is a double-sided polishing method of a wafer in which the wafer, which has been set in a wafer loading hole of the carrier, is compressed and held along with the carrier with an upper platen and a lower platen and the upper platen and the lower platen are rotated while supplying slurry to the wafer. The method includes: previously measuring an inclination value of a main surface of each of a plurality of carriers in the vicinity of the edge of the wafer loading hole; selecting, from among the plurality of carriers, those for which the inclination value is equal to or smaller than a threshold based on the measurement results of the inclination value; and applying the double-sided polishing to a wafer using the selected carrier.

Double-sided wafer polishing method

Provided is a method of double-side polishing a semiconductor wafer, which can suppress variation in the polishing quality by providing for changes in the polishing environment during polishing. The method of double-side polishing of a semiconductor wafer includes: a step of predetermining a criterion function for determining polishing tendencies of double-side polishing; a first step of starting double-side polishing of the semiconductor wafer under initial polishing conditions; a second step of while performing double-side polishing on the semiconductor wafer under the initial polishing conditions, calculating a value of the criterion function using the apparatus log data in a predetermined period of polishing in the first step, and setting on the double-side polishing apparatus polishing conditions obtained by adjusting the initial polishing conditions based on the value of the criterion function; and a third step of performing double-side polishing of the semiconductor wafer under the adjusted polishing conditions.

Method of double-side polishing semiconductor wafer

Provided a method of producing a carrier which make it possible to prevent the reduction in the flatness of a semiconductor wafer even if the semiconductor wafer is subjected to repeated double-side polishing procedures. The method of producing a carrier including a metal portion and a ring-shaped resin portion includes: a preparation step of preparing the metal portion and the resin portion (Step S); a placement step of placing the resin portion in the retainer opening in the metal portion (Step S); and a resin portion polishing step of polishing both surface of the resin portion (Step S). The method includes, prior to the resin portion polishing step (Step S), a production stage swelling step of swelling the resin portion placed in the retainer opening in the metal portion by impregnating the resin portion with a first liquid (Step S).

Method of producing carrier and method of polishing wafer

A double-side polishing apparatus for a work according to the present invention includes one or more work thickness measuring devices and a control unit. The double-side polishing method for a work includes the steps of: first polishing for polishing both surfaces of the work; first measurement for measuring the thickness of the work; in the first measurement step, when the thickness of the work is found to reach the predetermined thickness, terminating the orbital motion of the carrier plate; second polishing both surfaces of the work while the carrier plate performs only rotational motion; second measurement for measuring the thickness of the work at predetermined position(s); and determining a time for terminating polishing based on the result of the measurement of the thickness of the work in the second measurement step.

Apparatus and method for double-side polishing of work

The method for producing a silicon epitaxial wafer according to the present invention has: a growth step G at which an epitaxial layer is grown on a silicon single crystal substrate; a first polishing step E at which, before the growth step G, both main surfaces of the silicon single crystal substrate are subjected to rough polishing simultaneously; and a second polishing step H at which, after the growth step G, the both main surfaces of the silicon single crystal substrate are subjected to finish polishing simultaneously.

Method for producing silicon epitaxial wafer

To propose a method for realizing appropriate delivering of works to carriers in the conventional transfer process. Specifically, in a polishing method for polishing a work retained in a carrier, at least one carrier for retaining a work to be polished is placed between an upper plate and a lower plate; the work is fit in a hole of the carrier; the carrier and the work are inserted between the upper plate and the lower plate; and at least one of the upper plate and the lower plate is rotated while supplying a polishing agent to a space between the upper plate and the lower plate. In fitting the work in the hole of the carrier, an end portion of the work is held and the work is carried to a position above the lower plate; the work is positioned with respect to the hole of the carrier on the lower plate; and the work is released from the hold and guided by a guide to be slowly carried down toward the hole.

Polishing method and polishing apparatus

The present invention provides an apparatus capable of uniformly grinding an polishing pad. Further, the present invention provides a method of grinding an polishing pad by using the grinding apparatus. Specifically, the present invention provides a method of, in a double-side polishing device having a carrier for holding a work, a pair of upper and lower rotating surface plates disposed to face each other to sandwich the carrier therebetween, and the polishing pad provided on each of the facing surfaces of the rotating surface plates for polishing the work, grinding the polishing pad, the method comprising the steps of: separating the upper and the lower rotating surface plates away from each other when the polishing pads on the upper and the lower rotating surface plates are to be ground; inserting, between the separated upper and lower rotating surface plates, an arm having at a front end portion thereof a grinding plate of a diameter smaller than those of the rotating surface plates; and pressing the grinding plate against the polishing pad of each of the rotating surface plates and rotating the grinding plate, thereby grinding the polishing pad of each of the rotating surface plates. The present invention also provides an apparatus which enables the grinding method described above.

Conditioning method and conditioning apparatus for polishing pad for use in double side polishing device

An epitaxial wafer is provided capable of eliminating particles in a device process, particles being generated from a scratch in a boundary area between a rear surface and a chamfered surface of a wafer. The scratch in the boundary area between the rear surface and the chamfered surface is removed in a scratch removal process. Thus, no particles exist caused by a scratch, at a time of immersion in an etching solution in the device process, and thus a device yield is increased.

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Tokyo, Japan

Tomonori Miura