Sony Corporation

Other

Sony Shiroishi Semiconductor Inc.

Tomonori Hino

Hironobu Narui

Nobukata Okano

Jugo Mitomo

Masao Ikeda

Katsunori Yanashima

Shigetaka Tomiya

Akira Ohmae

Akira Ishibashi

Yoshiaki Watanabe

Osamu Goto

Noriyuki Futagawa

Takeharu Asano

Kazushi Nakano

Michinori Shiomi

Hisayoshi Kuramochi

Satoshi Taniguchi

Tsuyoshi Tojo

Takao Miyajima

Motonobu Takeya

Takaaki Ami

Satoshi Ito

Satoru Kijima

Tatsuo Ohashi

Izuho Hatada

Yoshifumi Yabuki

Shinichi Ansai

Yuuji Hiramatsu

Takashi Kobayashi

Hiroyuki Okuyama

Yasuo Sato

Masakazu Ukita

Shiro Uchida

Tsunenori Asatsuma

Katsuyoshi Shibuya

Katsuhiro Akimoto

Shinro Ikeda

Masayuki Arimochi

Yuichiro Kikuchi

Masashi Shiraishi

Atsushi Toda

Norikazu Nakayama

Nobuhiro Suzuki

Takashi Yamaguchi

Masaki Shiozaki

Mikihiro Yokozeki

Takayuki Kawasumi

Toshimasa Kobayashi

Tsuyoshi Fujimoto

Eisaku Kato

Yuichi Kuromizu

Kota Tokuda

Kenji Funato

Tsuyoshi Nagatake

Osamu Matsumoto

Hiroyasu Noguchi

Yuta Yoshida

Yoshio Oofuji

Tatsuhiro Hirata

Tadahiko Kawasaki

Noriko Kobayashi

Michiko Komine

Nobutaka Okano

A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.

Nitride-based III-V group compound semiconductor

Method for growing a nitride-based III-V Group compound semiconductor

Method for growing a nitride-based III-V group compound semiconductor

The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an n-DBR mirror, an active region, and a p-DBR mirror and includes a columnar layered structure with its sidewall covered with an insulating film. The photodiode is formed on the substrate and has a circular layered structure wherein an i-GaAs layer and a p-GaAs layer surrounds the laser device with an isolating region interposed between the i-GaAs and p-GaAs layers and the laser device. The diameter of the photodiode is smaller than the diameter of the optical fiber core optically coupled with the optical semiconductor apparatus. Since the laser device and the photodiode are monolithically integrated, the devices do not require optical alignment, and thus, facilitate optical coupling with an optical fiber.

Optical semiconductor apparatus having a bidirectional communication system employing a single-core optical fiber

A light-emitting device includes a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a second electrode formed on the second compound semiconductor layer; an insulating layer covering the second electrode; a first opening provided to pass through the insulating layer, the second electrode, the second compound semiconductor layer, and the active layer; a second opening provided to pass through the insulating layer; a first electrode formed on an exposed portion of the first compound semiconductor layer at the bottom of the first opening; a first electrode extension extending from the first electrode to the insulating layer through the first opening and a first pad portion including a portion of the first electrode extension on the insulating layer; and a second pad portion connected to an exposed portion of the second electrode at the bottom of the second opening.

Light-emitting device

In a method for manufacturing a semiconductor device, the method includes the step of growing a nitride-based III-V compound semiconductor layer, which forms a device structure, directly on a substrate without growing a buffer layer, the substrate being made of a material with a hexagonal crystal structure and having a principal surface that is oriented off at an angle of not less than &#x2212;0.5&#xb0; and not more than 0&#xb0; from an R-plane with respect to a direction of a C-axis.

Method for manufacturing semiconductor device and semiconductor device

Disclosed herein is a method for growing a semiconductor layer which includes the step of growing a semiconductor layer of hexagonal crystal structure having the (11-22) or (10-13) plane direction on the (1-100) plane of a substrate of hexagonal crystal structure.

Method for growing semiconductor layer, method for producing semiconductor light-emitting element, semiconductor light-emitting element, and electronic device

The present invention provides a semiconductor laser realizing reduced possibility that a wiring layer disposed in the air is broken even under severe environment of a large temperature difference. A trench is provided between adjacent ridges, and a wiring layer electrically connecting an upper electrode and a pad electrode is disposed in the air at least above the trench. The wiring layer in a portion above the trench has a flat shape or a concave shape which dents toward the trench. With the configuration, accumulation of strains in the wiring layer when the wiring layer repeats expansion and shrink under severe environment of a large temperature difference is suppressed.

Semiconductor laser

A method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.

Light emitting device and method of manufacturing the same

A semiconductor light emitting device capable of realizing a long life, and a method of manufacturing the same. The impurity concentration of hydrogen in the active layer is 3&#xd7;10cmor less, and the impurity concentration of aluminum in the active layer is 1&#xd7;10cmor less. Thereby, the operating current is inhibited from increasing, and a long life can be realized.

Semiconductor light emitting device, method of manufacturing same, and optical module

Herein disclosed a method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.

Disclosed herein is a light emitting diode includes: a first semiconductor layer of a first conductivity type; an active layer on the first semiconductor layer; a second semiconductor layer of a second conductivity type on the active layer; a first electrode configured to be electrically coupled to the first semiconductor layer; and a second electrode configured to be provided on the second semiconductor layer and be electrically coupled to the second semiconductor layer, the second electrode including a first metal film that has a predetermined shape and is composed mainly of silver and a second metal film that covers the first metal film and is composed mainly of palladium and/or platinum.

Light emitting diode, method for manufacturing light emitting diode, integrated light emitting diode, method for manufacturing integrated light emitting diode, light emitting diode backlight, light emitting diode illumination device, light emitting diode display, electronic apparatus, electronic device, and method for manufacturing electronic device

In a method for making a compound semiconductor including a substrate and a compound semiconductor layer having a lattice mismatch ratio of 2% or more relative to the substrate, the method includes a first epitaxial growth step of forming a buffer layer on the substrate, the buffer layer having a predetermined distribution of lattice mismatch ratios in the thickness direction so as to reduce strain; and a second epitaxial growth step of forming the compound semiconductor layer on the buffer layer. The first epitaxial growth step is carried out by metal organic chemical vapor deposition at a deposition temperature of 600&#xb0; C. or less.

Method for making compound semiconductor and method for making semiconductor device

A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240&#xb0; C. to less than 375&#xb0; C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.

Semiconductor light-emitting device and method of manufacturing the same

Optical semiconductor apparatus

Growing community of inventors

Kanagawa, Japan

Tomonori Hino