Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Abushiki Kaisha Toshiba

Tomonori Aoyama

Kiyotaka Miyano

Kyoichi Suguro

Seiji Inumiya

Takuya Kobayashi

Keitaro Imai

Katsuyuki Sekine

Tatsunori Isogai

Hiroshi Tomita

Gaku Minamihaba

Kazuaki Nakajima

Hitoshi Tamura

Tadashi Iijima

Hisataka Hayashi

Masaki Noguchi

Hisako Aoyama

Hiromi Niiyama

Haruo Okano

Katsuhiko Hieda

Kazuhide Abe

Iwao Kunishima

Takashi Shimizu

Kazuhiro Eguchi

Akio Kaneko

Yusuke Oshiki

Shuichi Komatsu

Kumi Okuwada

Kazuya Nishihori

Yasunori Okayama

Yoshikazu Tanabe

Yoshiaki Kitaura

Wakana Kai

Hiroshi Ohno

Makoto Honda

Yoshitaka Tsunashima

Akira Takashima

Tomohiro Saito

Kazuhiro Matsuo

Yoshinori Honguh

Masataka Shiratsuchi

Daisuke Ikeno

Motoyuki Sato

Kenichi Yoshino

Hiroshi Nakazawa

Akiko Sekihara

According to one embodiment, a semiconductor device includes a semiconductor layer, a charge storage layer provided on the surface of the semiconductor layer via a first insulating film, and an electrode layer provided on the surface of the charge storage layer via a second insulating film. The first insulating film includes a first region where the compositional ratio of nitrogen to silicon, oxygen and nitrogen varies from a first value to a second value, which is lower than the first value, along a first direction from the semiconductor layer toward the charge storage layer.

Semiconductor device

In one embodiment, a method of manufacturing a semiconductor device includes alternately forming a plurality of first films and a plurality of second films on a substrate, and forming an opening in the first and second films. The method further includes sequentially forming a first insulator, a charge storage layer, a second insulator and a semiconductor layer on surfaces of the first and second films in the opening. The second insulator includes a silicon oxynitride film, and the silicon oxynitride film is formed using a first gas that includes silicon and a first element, a second gas that includes oxygen and nitrogen, and a third gas that includes a second element that reacts with the first element.

Semiconductor device and method of manufacturing the same

A semiconductor device includes a semiconductor layer, a first conductive layer, a tunneling insulating film, and a charge trapping film. The tunneling insulating film is provided between the semiconductor layer and the first conductive layer. The charge trapping film is provided between the first conductive layer and the tunneling insulating film. The charge trapping film includes a first separation layer, a first trapping layer, and a second trapping layer. The first trapping layer is positioned between the tunneling insulating film and the first separation layer. The second trapping layer is positioned between the first conductive layer and the first separation layer. A trapping efficiency of charge in the first trapping layer is higher than a trapping efficiency of charge in the second trapping layer.

In accordance with an embodiment, a microwave irradiation apparatus includes a chamber and a polarizing plate. The chamber is configured to accommodate a substrate and is provided with an introduction port to introduce the microwave applied to the substrate from a direction at an angle within a range of &#xb1;45 degrees to a direction horizontal to a surface of the substrate. The polarizing plate is installed between the introduction port and the substrate, and selectively transmits a microwave where an amplitude direction of a magnetic field or an electric field is vertical to the surface of the substrate.

Microwave irradiation apparatus and substrate treatment method

According to one embodiment, a microwave annealing apparatus is provided, including a housing shielding electromagnetic waves, a first electromagnetic wave source configured to apply a first electromagnetic wave into the housing, a second electromagnetic wave source configured to apply, into the housing, a second electromagnetic wave having a higher frequency than the first electromagnetic wave, a susceptor configured to hold a semiconductor substrate, made of a material transparent to the first electromagnetic wave and provided in the housing, a temperature measuring device configured to measure the temperature of the semiconductor substrate, and a control unit configured to control the power of each of the first and second electromagnetic wave sources in accordance with the temperature measured by the temperature measuring device.

Microwave annealing apparatus and method of manufacturing a semiconductor device

According to one embodiment, the manufacturing method for the semiconductor device according to the embodiment includes carrying out ion implantation to the semiconductor layer and forming an amorphous layer on the surface of the semiconductor layer, and a heat treatment process using microwave annealing at a temperature higher than or equal to 200&#xb0; C. and lower than or equal to 700&#xb0; C. and single crystallizes the amorphous layer.

Manufacturing method for semiconductor device, annealing device, and annealing method

According to one embodiment, a method of manufacturing a semiconductor device includes forming a resist and a layer to be etched on a substrate, forming a non-cured layer on the resist by supplying a metal compound containing Ru, forming a cured layer on a surface layer of the resist by using the non-cured layer, and etching the layer to be etched by reactive ion etching using the cured layer and the resist as a mask.

Method of manufacturing semiconductor device and semiconductor manufacturing apparatus

In one embodiment, a method of manufacturing a semiconductor device includes forming a transistor including a gate insulator and a gate electrode on a substrate. The method further includes forming an interconnect structure including one or more interconnect layers on the substrate by performing first and second processes one or more times, the first process forming an interconnect layer on the substrate, and the second process processing the interconnect layer into an interconnect pattern. The method further includes annealing the substrate by irradiating the substrate with a microwave, after at least one interconnect layer included in the one or more interconnect layers is processed into an interconnect pattern on the substrate.

Method of manufacturing semiconductor device

According one embodiment, a method for manufacturing a semiconductor device is provided, which includes forming a pair of element isolation insulation films on a semiconductor substrate, forming a gate electrode structure on sides of the gate electrode structure, selectively removing oxide films that are formed on a top surface of the diffusion layer and a top surface of the gate electrode by placing the substrate in a gas atmosphere selected from the group consisting of F, Cl, Br, I, H, O, Ar, or N; and irradiating the semiconductor substrate with microwave radiation. The method also includes depositing a metal film on a top surface of the diffusion layer and a top surface of the gate electrode, and a silicide film is formed by heating the substrate.

Manufacturing method of a semiconductor device

In one embodiment, a method of manufacturing a semiconductor device includes forming a concave portion on a surface of a substrate to be processed. The method further includes forming a coating film on the substrate to embed the coating film in the concave portion. The method further includes performing a first heat treatment in an atmosphere including an oxidant which contains polar molecules. The method further includes performing a second heat treatment after the first heat treatment by irradiating the coating film with a microwave after or while exposing the coating film to a liquid or a gas containing polar molecules.

In one embodiment, a method of manufacturing a semiconductor device includes forming an amorphous semiconductor film on a substrate. The method further includes annealing the amorphous semiconductor film by irradiating the substrate with a microwave to form a polycrystalline semiconductor film from the amorphous semiconductor film. The method further includes forming a transistor whose channel is the polycrystalline semiconductor film.

According to one embodiment, a method for manufacturing a semiconductor device, wherein an amorphous semiconductor film comprising a microcrystal is annealed using a microwave, to crystallize the amorphous semiconductor film comprising the microcrystal using the microcrystal as a nucleus.

Semiconductor device and method for manufacturing semiconductor device

According to one embodiment, a method of manufacturing a semiconductor device includes forming a gate electrode on a channel region in a silicon substrate via a gate insulation film; forming a source region and a drain region in the silicon substrate so as to sandwich the channel region along a channel direction by injecting desired impurities to the silicon substrate; forming amorphous regions containing the impurities on surfaces of the source region and the drain region by amorphousizing the surfaces of the source region and the drain region; forming nickel films on the amorphous regions; and forming crystal layers containing the activated impurities and forming nickel silicide films on the crystal layers at low temperature by radiating microwaves to the amorphous regions and the nickel films.

According to one embodiment, a manufacturing method of semiconductor device includes forming plural elements on a substrate, forming a silicon compound film so as to bury between a plurality of elements, and modifying the silicon compound film to a silicon dioxide film by radiating microwaves.

Manufacturing method of semiconductor device

According to one embodiment, in a method for manufacturing a semiconductor device, a surface region of a semiconductor substrate is modified into an amorphous layer. A microwave is irradiated to the semiconductor substrate in which the amorphous layer is formed in a dopant-containing gas atmosphere so as to form a diffusion layer in the semiconductor substrate. The dopant is diffused into the amorphous layer and is activated.

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Yokohama, Japan

Tomonori Aoyama