Hitachi, Ltd.

Opnext Japan, Inc.

Hitachi High-Tech Corporation

Ushio Denki Kabushiki Kaisha

Other

Sumitomo Chemical Company, Limited

Hitachi Metals, Ltd.

Tomonobu Tsuchiya

Masahiro Aoki

Kazuhisa Uomi

Akihisa Terano

Tsukuru Ohtoshi

Naoki Chinone

Makoto Okai

Kazunori Shinoda

Takeshi Kitatani

Hiroshi Sato

Kazuhiro Mochizuki

Kouji Nakahara

Akira Taike

Takashi Shiota

Takayuki Tsutsui

Hajime Kawano

Makoto Suzuki

Atsushi Nakamura

Takashi Ohshima

Tatemi Ido

Shinji Sakano

Tomoyoshi Mishima

Shigehisa Tanaka

Shinji Sasaki

Shin Imamura

Naoki Kaneda

Masaaki Komori

Masato Hagimoto

Akihiko Oka

Tsurugi Sudoh

Shinya Sasaki

Koichiro Adachi

Noritsugu Takahashi

Shahedul Hoque

Takashi Ishigaki

Misuzu Sagawa

Shunsuke Mizutani

Shigeki Makino

Tadayoshi Tsuchiya

Hiroyuki Gomyo

Takashi Toyonaka

Susumu Sorimachi

Kiyohisa Hiramoto

Hironori Yanagisawa

Disclosed herein is a semiconductor laser device utilizing a sub-mount substrate that is capable of having a further sufficient heat dissipation property. The semiconductor laser device comprises: a monocrystalline sub-mount substrate having a crystalline structure including a first crystalline plane (c-plane) having a normal line direction on a first crystalline axis (c-axis) and a second crystalline plane (a-plane) having a normal line direction on a second crystalline axis (a-axis) having a higher thermal conductivity than the first crystalline axis; and a semiconductor laser chip configured to be joined to a side of a first surface of the sub-mount substrate. The first crystalline plane inclines with respect to the first surface of the sub-mount substrate.

Semiconductor laser device

The objective of the present invention is to provide a charged particle detector and a charged particle beam device with which it is possible to acquire a high luminous output while rapidly eliminating charged particles that are incident to a scintillator. In order to achieve said objective the present invention proposes: a charged particle detector provided with a light-emitting unit including a laminated structure obtained by laminating a GaInN-containing layer and a GaN layer, and provided with a conductive layer that is in contact with the GaInN-containing layer on the charged particle incidence surface side of the laminated structure; and a charged particle beam device.

Charged particle detector including a light-emitting section having lamination structure, charged particle beam device, and mass spectrometer

The disclosure provides a charged particle detector including a scintillator that emits light with stable intensity and obtains high light emission intensity regardless of an energy of an incident electron. The disclosure provides the charged particle detector including: a first light-emitting part () in which a layer containing GaAlInN (where 0&#x2264;x&#x3c;1, 0&#x2264;y&#x3c;1) and a layer containing GaN are alternately laminated; a second light-emitting part () in which the layer containing GaAlInN (where 0&#x2264;x&#x3c;1, 0&#x2264;y&#x3c;1) and the layer containing GaN are alternately laminated; and a non-light-emitting part () that is interposed between the first light-emitting part () and the second light-emitting part () (see FIG.).

Charged particle detector and charged particle beam apparatus

Disclosed herein is a semiconductor laser device utilizing a monocrystalline SiC substrate that is capable of assuring a sufficient heat dissipation property. The semiconductor laser device comprises: a monocrystalline SiC substrate having an electrical conductivity, the substrate having a first surface and a second surface; and a semiconductor laser chip (LD chip) arranged on the first surface. Also, the semiconductor laser device may comprise an insulating film arranged at a side of the first surface of the SiC substrate and configured to insulate a first electric conductive layer onto which the semiconductor laser chip is mounted and an electric conductive member (a second electric conductive layer and a heatsink portion) to be joined to a side of the second surface of the SiC substrate.

Disclosed are an npn-type bipolar transistor as a nitride semiconductor device having good characteristics, and a method of manufacturing the same. A so-called pn epitaxial substrate has a structure wherein an n-type collector layer and a p-type base layer of a three-layer structure are provided over a substrate. The three-layer structure includes first (lower layer side), second, and third (upper layer side) p-type base layers which differ in thickness and p-type impurity concentration. In a partial region inside the second p-type base layer located as an intermediate layer in the p-type base layer of the three-layer structure, an n-type emitter region is formed by ion implantation.

Nitride semiconductor device and method of manufacturing the same

A nitride semiconductor element having a high reverse breakdown voltage and a method of manufacturing the same are provided. A diode (a vertical-type SBD) has an n-type nitride semiconductor layer (a drift region) formed on an n-type nitride semiconductor substrate, a p-type nitride semiconductor layer formed on the n-type nitride semiconductor layer, and besides, an anode electrode formed on the p-type nitride semiconductor layer. The p-type nitride semiconductor layer has a relatively-thin first portion and a relatively-thick second portion provided so as to surround the first portion as being in contact with an outer circumference of the first portion. Also, the relatively-thin first portion of the p-type nitride semiconductor layer is formed thinner than the second portion so as to be depleted. The relatively-thick second portion of the p-type nitride semiconductor layer forms a guard ring part.

Nitride semiconductor element and method of manufacturing the same

Disclosed is a high performance nitride semiconductor having a reverse leak current characteristic with two-dimensional electron gas as a conductive layer. A desired impurity is diffused into or a nitride semiconductor to which a desired impurity is added is re-grown on the bottom surface and the side face portion of a recessed portion formed by dry etching using chlorine gas on the upper surface of a nitride semiconductor stacked film to increase resistance of the side face portion of the nitride semiconductor stacked film contacting an anode electrode, reducing the reverse leak current.

Nitride semiconductor diode

In a semiconductor device including a stack structure having heterojunction units formed by alternately stacking GaN (gallium nitride) films and barrier films which are different in forbidden band width, a first electrode formed in a Schottky barrier contact with one sidewall of the stack structure, and a second electrode formed in contact with the other sidewall, an oxide film is interposed between the first electrode and the barrier films. Therefore, the reverse leakage current is prevented from flowing through defects remaining in the barrier films due to processing of the barrier films, so that a reverse leakage current of a Schottky barrier diode is reduced.

Semiconductor device and its fabrication method

In an InGaN-based nitride semiconductor optical device having a long wavelength (440 nm or more) equal to or more than that of blue, the increase of a wavelength is realized while suppressing In (Indium) segregation and deterioration of crystallinity. In the manufacture of an InGaN-based nitride semiconductor optical device having an InGaN-based quantum well active layer including an InGaN well layer and an InGaN barrier layer, a step of growing the InGaN barrier layer includes: a first step of adding hydrogen at 1% or more to a gas atmosphere composed of nitrogen and ammonia and growing a GaN layer in the gas atmosphere; and a second step of growing the InGaN barrier layer in a gas atmosphere composed of nitrogen and ammonia.

Nitride semiconductor optical element and manufacturing method thereof

A purpose is to provide a semiconductor optical device having good characteristics to be formed on a semi-insulating InP substrate. Firstly, a semi-insulating substrate including a Ru&#x2014;InP layer on a conductive substrate is used. Secondly, a semi-insulating substrate including a Ru&#x2014;InP layer on a Ru&#x2014;InP substrate or an Fe&#x2014;InP substrate is used and semiconductor layers of an n-type semiconductor layer, a quantum-well layer, and a p-type semiconductor layer are stacked in this order.

Semiconductor optical device

A nitride semiconductor light emitting device operating on a low voltage and excelling in reliability and performance is to be provided. It has a multi-layered p-type clad layer of at least two layers of a first p-type clad layer and a second p-type clad layer, wherein the second p-type clad layer contains a p-type impurity in a higher concentration the first p-type clad layer does, has a thickness ranging from 2 to 20 nm, and is formed of AlGaN whose Al content has a relationship of X&#x2266;Y to the first p-type clad layer doped with a p-type impurity containing at least an AlGaN (0&#x3c;X&#x2266;0.2) layer, while a p-type ohmic electrode is formed at least over the second p-type clad layer in contact therewith.

Nitride semiconductor light emitting device and method for manufacturing the same

A nitride semiconductor laser which features low resistance and high reliability. A buried layer is formed by selective growth and the shape of a p-type cladding layer is inverted trapezoidal so that the resistance of the p-type cladding layer and that of a p-type contact layer are decreased. For long-term reliability of the laser, the buried layer is a high-resistance semi-insulating layer which suppresses increase in leak current.

Nitride semiconductor lasers and its manufacturing method

The relationship between the reflectivity characteristic of a DBR layer(s), in which an InP layer and an InGaAlAs layer are laminated alternatively, and the optical absorption characteristic of the InGaAlAs layer, is a trade-off in a vertical cavity surface emitting laser on an InP substrate. The present invention applies a semiconductor DBR layer(s), in which an InP layer and an InGaAlAs-MQW (multi-quantum-wells) layer are laminated alternatively, in order to dissolve the above trade-off. The InGaAlAs-MQW layer is composed of InGaAlAs-wells and barriers. The InP layer is doped uniformly and the InGaAlAs-MQW layer has a structure in which at least a part thereof is doped.

Vertical cavity surface emitting semiconductor laser device

The object of the invention is to reduce the deterioration of crystallinity in the vicinity of an active layer when C, which is a p-type dopant, is doped and to suppress the diffusion of Zn, which is a p-type dopant, into an undoped active layer, thus to realize a sharp doping profile. When a Zn-doped InGaAlAs layer having favorable crystallinity is provided between a C-doped InGaAlAs upper-side guiding layer and an undoped active layer, the influence of the C-doped InGaAlAs layer whose crystallinity is lowered can be reduced in the vicinity of the active layer. Further, the Zn diffusion from a Zn-doped InP cladding layer can be suppressed by the C-doped InGaAlAs layer.

Semiconductor optical device and manufacturing method thereof

An integrated optoelectronic device includes optical waveguide elements containing InGaAlAs as a principal component, formed on an InP substrate and connected in an end-to-end fashion by butt jointing. An InGaAsP layer is formed on the InP substrate to suppress the mass transport of InP during the fabrication of the integrated optoelectronic device. The InGaAsP layer is formed before the InP substrate is heated at a crystal growth temperature on the order of 700&#xb0; C. to form the InGaAlAs optical waveguide element.

Integrated optoelectronic device and method of fabricating the same

Growing community of inventors

Hachioji, Japan

Tomonobu Tsuchiya