Riken Corporation

Japan Science and Technology Agency

National Institute for Materials Science

Other

Nec Corporation

Japan Science and Technology Corporation

Horiba, Ltd.

Tomonobu Nakayama

Masakazu Aono

Tsuyoshi Hasegawa

Kazuya Terabe

Toshitsugu Sakamoto

Hisao Kawaura

Tadahiko Sugibayashi

Sumio Hosaka

Hiroshi Sunamura

Genki Yoshikawa

Tadaaki Nagao

Terunobu Akiyama

Seiji Higuchi

Hirofumi Tanaka

Yoshitaka Shingaya

Dominik Enders

Peter Vettiger

Sebastian Gautsch

Frederic Loizeau

Naohiko Sugibayashi

Taichi Okuda

A double-side-coated surface stress sensor includes a sensing membrane structure portion where at least two ends opposite each other are fixed on a mounting portion; a receptor layer that coats both surfaces of the sensing membrane structure portion; and an element detecting a stress, which is provided in the vicinity of at least one of the fixed two ends, opposite each other, of the sensing membrane structure portion or at least one of the fixed two ends, opposite each other, of the mounting portion, in which in a detection output is obtained from the element based on the stress which is applied onto the receptor layer coating both of the surfaces of the sensing membrane structure portion. Accordingly, it is possible to provide a double-side-coated surface stress sensor which coats both surfaces of the sensing membrane structure portion by the receptor layer, thereby obtaining a sufficiently large detection output.

Double-side-coated surface stress sensor

An optical electric field enhancement element includes a nanorod which includes a plurality of conductive layers formed therein in a direction parallel to a longitudinal axis of the nanorod. Adjacent conductive layers are isolated from each other via an insulating layer. The nanorod exhibits an effect of enhancing an optical electric field.

Optical electric field enhancement element and probe using the same

The method for producing a surface enhanced infrared absorption sensor of the invention is characterized by: adsorbing metallic nanoparticles dispersed in a solution on a surface of a substrate, or allowing the adsorbed metallic nanoparticles to be grown in a solution, thereby forming a film; applying infrared light to the substrate from the side thereof opposite to the side on which the metallic nano-thin film is disposed; detecting evanescent waves exuding from the substrate; and regulating a surface enhanced infrared adsorption activity while monitoring surface enhanced infrared adsorption signals in situ, whereby the metallic nano-thin film is grown in the form of flat and discontinuous islands. According to the method, there is provided a production technique for a surface enhanced infrared absorption (SEIRA) sensor having a higher sensitivity and more excellent in the reproducibility.

Surface enhanced infrared absorption sensor and method for producing the same

A main object of the present claimed invention is to provide a scanning probe microscope that can recognize a relative position between multiple probes accurately. The scanning probe microscope comprises multiple probesmovable in the XYZ-directions, a stageon which a specimenis placed and that is movable in the XY-directions, a detecting partthat detects the physical properties that changes with the movements of each of the probesin the Z-direction according to the surface shape of the specimen, at a time when each of the probesor the stageis moved in the XY-directions, an image generating partthat images the surface image of the specimenin response to the detected signals from the detecting part, and a relative position calculating partthat obtains the surface image based on each of the probesand obtained by the image generating part, when the stageis moved in the XY-directions without changing a relative position between the probesin the XY-directions, and calculates the relative position between the probesby checking the surface images obtained by the probes.

Scanning probe microscope and a method to measure relative-position between probes

The present invention relates to a transistor for selecting a storage cell and a switch using a solid electrolyte. In a storage cell, a metal is stacked on a drain diffusion layer of a field-effect transistor formed on a semiconductor substrate surface. The solid electrolyte using the metal as a carrier is stacked on the metal. The solid electrolyte contacts with the metal via a gap, and the metal is connected to a common grounding conductor. A source of the field-effect transistor is connected to a column address line, and a gate of the field-effect transistor is connected to a row address line.

Electric device using solid electrolyte

The present invention provides a solid electrolyte switching device, which can maintain an on or off state when the power source is removed, the resistance of which in on the state is low, and which is capable of integration and re-programming, and FPGA and a memory device using the same, and a method of manufacturing the same. A solid electrolyte switching device (') comprises a substrate () in which surface is coated with an insulation layer, a first interconnection layer () set on said substrate (), an ion supplying layer () set on said first interconnection layer (), a solid electrolyte layer () set on said ion supplying layer (), an interlevel insulating layer () having a via hole set to cover said first interconnection layer (), said ion supplying layer (), and said solid electrolyte layer (), a counter electrode layer () set to contact said solid electrolyte layer () through the via hole of said interlevel insulating layer (), and a second interconnection layer () set to cover said counter electrode layer (). The switching device can be provided in which the on state, or the off state can be arbitrarily set by the threshold voltage applied between the ion supplying layer () and the counter electrode layer (), which is non-volatile, and the resistance of which in the on state is low. The switching device of the present invention is also simple and fine in structure, and hence makes it possible to provide smaller switching devices than are currently available. Further, using the switching device of the present invention as the switching device of an FPGA () makes it possible to provide re-programmable and fast operation FPGA (). Using the switching device of the present invention as a memory cell of a memory device makes it possible to provide a non-volatile memory device with high programming and reading speed.

Solid electrolyte switching device, FPGA using same, memory device, and method for manufacturing solid electrolyte switching device

There are provided a point contact array, in which a plurality of point contacts are arranged, each point contact electrically and reversibly controlling conductance between electrodes and being applicable to an arithmetic circuit, a logic circuit, and a memory device, a NOT circuit, and an electronic circuit using the same. A circuit includes a plurality of point contacts each composed of a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance. The conductance of each point contact is controlled to realize the circuit. AgS, AgSe, CuS, or CuSe is preferably used as the compound conductive material. When a semiconductor or insulator material is interposed between the electrodes, a crystal or an amorphous material of GeS, GeSe, GeTe, or WO(0&#x3c;x&#x3c;100) is preferably used as the semiconductor or insulator material. A NOT circuit is realized using a device which includes an atomic switch serving as a two-terminal device, the device including a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance, and capable of controlling conductance between the electrodes.

Point contact array, not circuit, and electronic circuit using the same

A NOT circuit realized using an atomic switch serving as a two terminal device and including a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance. AgS, AgSe, CuS, or CuSe is preferably used as the compound conductive material.

Point contact array, not circuit, and electronic circuit comprising the same

A digital probing type atomic force microscope (AFM) for measuring high aspect structures with high precision. A probeis vibrated while moved to the vicinity of an atomic force region on a specimen surface. The position of the probe is measured when a specified atomic force is detected in the atomic force region. The probe is then moved away from the specimen surface. A servo system for maintaining a gap between the probe and specimen surface is stopped. The probe is moved to a measurement point along the specimen surface while kept away from the specimen. The vibration frequency is a frequency slightly offset from the cantilever resonance point. The atomic force is detected based on the vibration amplitude of the cantilever.

Scanning probe microscope and specimen surface structure measuring method

A point contact array, including plural point contacts electrically and reversibly controlling conductance between electrodes and being applicable to an arithmetic circuit, a logic circuit, a memory device, a NOT circuit, and an electronic circuit including the same. The circuit includes plural point contacts each including a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance. The conductance of each point contact is controlled to realize the circuit. AgS, AgSe, CuS, or CuSe is preferably used as the compound conductive material. When a semiconductor or insulator material is interposed between the electrodes, a crystal or an amorphous material of GeS, GeSe, GeTe, or WO(0&#x3c;x&#x3c;100) is preferably used as the semiconductor or insulator material. The NOT circuit is realized using a device including an atomic switch serving as a two-terminal device, the device including a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance, and capable of controlling conductance between the electrodes.

This invention provides a method for constructing bridge including fine wires or point contacts producing a quanitized inter-electrode conductance, and provides a method for easily controlling the conductance of this bridge. Further, it aims to provide an electronic element using conductance control due to the bridge, fine wire or point contact formed between the electrodes. These objects are accomplied with an electronic element comprising a first electrode comprising a mixed electroconducting material having ion conductance and electron conductance, and a second electrode comprising an electroconducting substance, wherein the inter-electric conductance can be controlled. In another aspect, this invention is an electronic element formed by a bridge between electrodes, by applying a voltage between the electrodes so that the second electrode is negative with respect to the first electrode and movable ions migrate from the first electrode to the second electrode. In a third aspect, this invention is a method of controlling inter-electrode conductance comprising at least one of applying a voltage between the electrodes of the above electronic element so that the second electrode is negative with respect to the first electrode so that a bridge is formed between the electrodes due to the migration of movable ions from the first electrode to the second electrode, and reversing the inter-electrode polarity so that the bridge is thinned or disconnected.

Electronic device having controllable conductance

An apparatus provided for evaluating electrical characteristics by bringing a plurality of metal probes in contact with a sample. A metal probe is formed on a free end of a cantilever on which are formed a resistor, two electrodes for resistance detection, and an electrode for measuring electrical characteristics. A tip of the metal probe projects beyond the free end of the cantilever. The probe position is controlled by an atomic force microscopy.

Apparatus for evaluating electrical characteristics

The invention provides a probe for use with a scanning tunneling microscope, a method of treating the probe, and a method of fabricating a nano-structure, which facilitates formation of a continuous nano-structure. The probe for the scanning tunneling microscope is formed of an Ag S crystal having both ion conductivity and electron conductivity. Voltage and tunnel current are applied between the probe and a substrate in order to move movable Ag ions to thereby grow, on the tip end of the probe, a projection (mini chip) composed of Ag ions or Ag atoms. The polarity of the applied voltage is reversed after the growth of the projection in order to return the Ag ions or Ag atoms constituting the grown projection (mini chip) into the Ag S crystal to thereby contract the projection. Thus, the probe can have a projection composed of Ag ions or Ag atoms and a regulated shape. Further, the movable ions or atoms of the mixed-conductive material are transferred onto the substrate so as to form a nano-structure on the substrate.

Growing community of inventors

Saitama, Japan

Tomonobu Nakayama