Toshiba Memory Corporation

Kioxia Corporation

Tomonari Shioda

Junya Fujita

Yoshiaki Fukuzumi

Takayuki Ito

Atsushi Fukumoto

Hajime Nagano

Takashi Ishida

Yasunori Oshima

Taichi Iwasaki

Tatsuo Ishida

Hiroto Saito

Shota Yamagiwa

Tatsuro Nishimoto

A semiconductor device in an embodiment includes a substrate and a transistor. The transistor includes a source layer, a drain layer, a gate insulation film, a gate electrode, a contact plug and a first epitaxial layer. The source layer and the drain layer are provided in surface regions of the substrate, and contain an impurity. The gate insulation film is provided on the substrate between the source layer and the drain layer. The gate electrode is provided on the gate insulation film. The contact plug is provided so as to protrude to the source layer or the drain layer downward of a surface of the substrate. The first epitaxial layer is provided between the contact plug and the source layer or drain layer, and contains both the impurity and carbon.

Semiconductor device and manufacturing method thereof

In one embodiment, a semiconductor device includes a substrate, and a first semiconductor layer provided on the substrate and including a first crystal grain. The device further includes a first film provided on a surface of the first semiconductor layer. The device further includes a second semiconductor layer provided on a surface of the first film, provided on the surface of the first semiconductor layer via an opening in the first film, including a second crystal grain, and included in a memory cell. Furthermore, a grain size of the second crystal grain is larger than a maximum value of a width of the second semiconductor layer in the opening.

Semiconductor device and method of manufacturing the same

A semiconductor device according to an embodiment includes: a semiconductor substrate including a first surface, a first contact part provided at a deeper level than the first surface, and a second contact part protruding up to a higher level than the first surface from the first contact part; a stacked body in which insulating layers and electrode layers are alternately stacked on the first surface; and a semiconductor film extending, on the second contact part, in the stacked body in a first direction perpendicular to the first surface. At an interface between the first contact part and the second contact part, a length of the first contact part in a second direction parallel to the first surface is larger than a length of the second contact part in the second direction.

According to one embodiment, the substrate includes a plurality of protrusions having columnar configurations, and a void being formed below the protrusions. The stacked body is provided on the substrate. The stacked body includes a plurality of electrode layers stacked with an insulator interposed. The semiconductor body contacts the protrusion and extends through the stacked body in a stacking direction of the stacked body. Upper ends of the protrusions are positioned at a height between a lowermost electrode layer and an electrode layer of a second layer from a bottom of the electrode layers.

Semiconductor device and method for manufacturing same

A semiconductor device according to an embodiment includes a substrate. A transistor includes a source layer and a drain layer that are provided in a surface region of the substrate and contain impurities. A gate dielectric film is provided on the substrate between the source layer and the drain layer. A gate electrode is provided on the gate dielectric film. A first epitaxial layer is provided on the source layer or the drain layer. A second epitaxial layer is provided on the first epitaxial layer and contains both the impurities and carbon. A contact plug is provided on the second epitaxial layer. A memory cell array is provided above the transistor.

According to one embodiment, the silicon layer includes phosphorus. The buried layer is provided on the silicon layer. The stacked body is provided on the buried layer. The stacked body includes a plurality of electrode layers stacked with an insulator interposed. The semiconductor body extends in a stacking direction of the stacked body through the stacked body and through the buried layer, and includes a sidewall portion positioned at a side of the buried layer. The silicon film is provided between the buried layer and the sidewall portion of the semiconductor body. The silicon film includes silicon as a major component and further includes at least one of germanium or carbon.

Growing community of inventors

Yokkaichi, Japan

Tomonari Shioda