Nuvoton Technology Corporation Japan

Tomonari Oota

Kazuma Yoshida

Ryosuke Okawa

Takeshi Imamura

Toshikazu Imai

Eiji Yasuda

Shigetoshi Sota

Mitsuaki Sakamoto

Masaaki Hirako

Yasuyuki Masumoto

Yusuke Nakayama

Hironao Nakamura

Masahide Taguchi

In a first vertical field-effect transistor in which first source regions and first connectors each of which electrically connects a first body region and a first source electrode are alternately and periodically disposed in a first direction (Y direction) in which a first trench extends, a ratio of LS [&#x3bc;m] to LB [&#x3bc;m] is at least 1/7 and at most 1/3, where LS denotes a length of one of the first source regions in the first direction, and LB denotes a length of one of the first connectors in the first direction, and LB&#x2264;&#x2212;0.024&#xd7;(VGS)+0.633&#xd7;VGS&#x2212;0.721 is satisfied for a voltage VGS [V] of a specification value of a semiconductor device, the voltage VGS being applied to a first gate conductor with reference to an electric potential of the first source electrode.

Semiconductor device

A semiconductor device includes a semiconductor substrate including a first conductivity-type impurity, a low-concentration impurity layer including a first conductivity-type impurity having a concentration lower than a concentration of the first conductivity-type impurity in the semiconductor substrate, a backside electrode including a metal material, and first and second transistors in the low-concentration impurity layer. The first transistor includes a first source electrode and a first gate electrode on a surface of the low-concentration impurity layer, the second transistor includes a second source electrode and a second gate electrode on the surface of the low-concentration impurity layer. The semiconductor substrate serves as a common drain region of the transistors. The thickness of the backside electrode ranges from 25 to 35 &#x3bc;m, and the ratio of the thickness of the backside electrode to the thickness of a semiconductor layer including the semiconductor substrate and the low-concentration impurity layer is 0.32 or more.

Semiconductor device, semiconductor module, and packaged semiconductor device

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Kyoto, Japan

Tomonari Oota