Renesas Electronics Corporation

Renesas Technology Corp.

Epoch Microelectronics, Inc.

Synaptics Japan Gk

Tomomitsu Kitamura

Ryo Endo

Jiro Shimbo

Norio Hayashi

Ken Suyama

Aleksander Dec

Takashi Tamura

Takahiro Nakamura

Toru Masuda

Yoshihiko Hori

Yasuyuki Kimura

Hiroshi Mori

Takefumi Seno

Kazuhiko Kanda

Keiichi Itoigawa

Jun Kurosawa

Takeshi Uchitomi

Hideaki Kuwada

Satoshi Arayashiki

A semiconductor device includes first to sixth external connection terminals, a first receiver connected to the first and second external connection terminals, a second receiver connected to the third and fourth external connection terminals, a third receiver connected to the fifth and sixth external connection terminals, a C-PHY block, a D-PHY block and a main processing section. The C-PHY block is configured to generate first reception data by performing signal processing on signals received from the first, second and third receivers in accordance with the MIPI C-PHY specification. The D-PHY block is configured to generate second reception data by performing signal processing on signals received from the first, second and third receivers in accordance with the MIPI D-PHY specification. The main processing section is configured to selectively receive the first and second reception data and perform desired processing on the received data.

Semiconductor device and module adapted to both MIPI C-PHY and MIPI D-PHY

The present invention provides ABS precision improving means under ADPLL environment or environment close to the ADPLL environment and realizes shortening of process time of the ABS. In a digital frequency comparator in an ABS circuit, a DFF for storing an initial phase difference in a DPE signal output from a DPFD is prepared. Immediately after start of ABS operation, a DPE signal output from the DPFD is recorded as a signal expressing an initial phase difference in an internal circuit of the DPFD into the DFF. After that, the digital frequency comparator performs ABS by using a signal obtained by subtracting the initial phase error recorded in the DFF from an input DPE signal, thereby realizing high-speed and stabilized ABS operation.

ADPLL circuit, semiconductor device, and portable information device

Variable operating currents are generated in relation to input signal power and output signal power and achieving both low noise and low power consumption. Emitter follower circuits are attached to output terminals of a frequency divider for generating a local signal. By adjusting the currents flowing through the emitter follower circuits, the amounts of currents flowing into mixers is adjusted. When the amounts of currents of local signals flowing into the mixers increases, the effect of noise suppression is expected. The amounts of the currents flowing through the emitter follower circuits is changed depending on the amplification factor of variable amplifiers.

Receiver, transceiver, and mobile terminal device

An LC resonant circuit of an oscillator includes a parallel circuit of an inductor, a first fine adjustable capacitor and a first capacitor bank, and a series circuit of a second fine adjustable capacitor and a second capacitor bank. A frequency conversion gain of the oscillator is the sum of a frequency conversion gain of the oscillator based upon the first fine adjustable capacitor which decreases according to increase of a capacitance value of the capacitor bank and a frequency conversion gain based upon the second fine adjustable capacitor which increases according to increase of a capacitance value of the second capacitor bank. Accordingly, an LC resonant circuit for an oscillator with reduced fluctuation of a frequency conversion gain, and an oscillator and a data processing equipment using the same are provided.

Oscillator and data processing equipment using the same and voltage control oscillator and data processing equipment using voltage control oscillator

An oscillation circuit formed in a single semiconductor chip, wherein a first source voltage is supplied to a first power supply terminal, a second source voltage different from the first source voltage is supplied to a second power supply terminal, a voltage regulator receives the voltage from the first power supply terminal and outputs a source voltage, a voltage controlled oscillation circuit is supplied with a source voltage from the voltage regulator, a current source circuit is connected to the second power supply terminal, the voltage regulator, the voltage controlled oscillation circuit and the current source circuit are inserted in series between the first and second power supply terminals, and the current supplied to the voltage controlled oscillation circuit from the voltage regulator flows in the current source circuit.

Embedded structure circuit for VCO and regulator

A voltage controlled LC resonance oscillation circuit has a plurality of capacitive elements connected to an output node. These capacitive elements are applied with voltages at opposing terminals for selecting an oscillating frequency band, so that the oscillating frequency band can be changed step by step in accordance with the selection voltage. The capacitive elements include at least one variable capacitive element such as a MOS capacitor, the capacitance of which is varied in accordance with a voltage applied thereto. The MOS capacitor is similar in structure to a MOS transistor. The variable capacitive element can be supplied at a terminal opposite to the output node with a voltage from a variable voltage source, for example, in place of the selection voltage. The voltage controlled LC resonance oscillation circuit can measure the output amplitude and oscillating frequency without affecting the characteristics thereof, and reduce the parasitic capacitance.

Oscillation circuit and a communication semiconductor integrated circuit

Growing community of inventors

Tokyo, Japan

Tomomitsu Kitamura