Renesas Technology Corp.

Hitachi, Ltd.

Tomomichi Koizumi

Tomio Yamada

Hirokazu Nakajima

Tsuneo Endoh

Mikio Negishi

Nobuyoshi Maejima

Masashi Yamaura

Yasuhiro Nunogawa

Osamu Miki

A semiconductor device comprising semiconductor chips each formed with plural pads at the main surface, chip parts each formed with connection terminals at both ends thereof, a module substrate on which the semiconductor chips and the chip parts are mounted, solder connection portions for connecting the chip parts and the substrate terminals of the module substrate by soldering, gold wires for connecting the pads of the semiconductor chips and corresponding substrate terminals of the module substrate, and a sealing portion formed with a low elasticity resin such as an insulative silicone resin or a low elasticity epoxy resin for covering the semiconductor chips, chip parts, solder connection portions and gold wires which prevents flow out of the solder in the solder connection portion by re-melting thereby preventing short-circuit.

Semiconductor device and a method of manufacturing the same

Semiconductor device having an elastic resin with a low modulus of elasticity

The present invention provides a power supply circuit, which supplies a power supply voltage to a high frequency power amplifier. The power supply circuit comprises a DC&mdash;DC converter, a voltage control transistor, and a control circuit which controls the voltage control transistor. When the power supply circuit is used in a CDMA-system cellular phone, the power supply circuit supplies a power supply voltage generated by the DC&mdash;DC converter to the high frequency power amplifier upon a low output, whereas upon a high output, the power supply circuit turns on the voltage control transistor to directly supply a battery voltage to the high frequency power amplifier. On the other hand, when the power supply circuit is used in a CGS-system cellular phone, the power supply circuit supplies a power supply voltage generated by the DC&mdash;DC converter to the high frequency power amplifier, whereas upon a high output, the voltage control transistor is controlled by the control circuit based on a signal for designating an output level to generate a power supply voltage supplied to the high frequency power amplifier.

Power supply system for a high frequency power amplifier

Growing community of inventors

Komoro, Japan

Tomomichi Koizumi