Dai Nippon Printing Co., Ltd.

Tomomi Suzuki

Hiroki Maeda

Kenichi Ogawa

Ken Tomino

Masataka Kano

Masanao Matsuoka

A manufacturing method of a semiconductor element from a pattern formed body capable of attaining patterning efficiently with a high precision. The method includes a photoresist pattern formation step, a hydrophilicity imparting step and a photoresist pattern peeling step.

Method for manufacturing a pattern formed body, method for manufacturing a functional element, and method for manufacturing a semiconductor element

The present invention provides a manufacturing method of an organic semiconductor device comprising a step of transferring an organic semiconductor layer to a gate insulation layer by a thermal transfer at a liquid crystal phase transition temperature of a liquid crystalline organic semiconductor material, and the step uses: an organic semiconductor layer-transferring substrate comprising a parting substrate having parting properties, and the organic semiconductor layer formed on the parting substrate and containing the liquid crystalline organic semiconductor material; and a substrate for forming an organic semiconductor device comprising a substrate, a gate electrode formed on the substrate, and the gate insulation layer formed to cover the gate electrode and having alignment properties which are capable of aligning the liquid crystalline organic semiconductor material on a surface of the gate insulation layer.

Growing community of inventors

Chiba-ken, Japan

Tomomi Suzuki