Other

Semiconductor Process Laboratory Co., Ltd.

Canon Sales Co., Inc.

Ricoh Company, Ltd.

Tomomi Suzuki

Hiroshi Yamashita

Kazuo Maeda

Daisuke Inoue

Hiroshi Yamada

Minoru Masuda

Jun Okamoto

Kazuki Yogosawa

Masashi Nagayama

Hiroyuki Kishida

Yoshimi Shioya

Hiroshi Ikakura

Kouichi Ohira

Youichi Yamamoto

Shoji Ohgawara

Yuhko Nishimoto

Tohru Yasukohchi

Tohru Suganuma

Satoshi Mochizuki

Takuya Suganuma

Yuichiro Kotake

Syunsuke Ohhashi

Kento Takeuchi

Kaede Masuko

Makoto Kurotobi

Koichi Ohira

Satoshi Nanba

Masahide Yamada

Naohito Shimoda

A process gas consisting of one of N, NO or a mixture thereof is converted to a plasma and then a surface of a copper wiring layer is exposed to the plasma of the process gas, whereby a surface portion of the copper wiring layer is reformed and made into a copper diffusion preventing barrier. According to this method, a noble semiconductor device can be provided having increased operational speed and less copper diffusion.

Semiconductor device and method of manufacturing the same

The present invention relates to a semiconductor device in which an interlayer insulating film having a low dielectric constant is formed by covering wiring primarily made of a copper film, and to a method of manufacturing the same. In manufacturing the semiconductor device an insulating film having a low dielectric constant is formed on a substrate by converting a film-forming gas into a plasma for reaction. The method includes forming a low-pressure insulating film on the substrate by coverting the film-forming gas at a first gas pressure into a plasma and forming a high-pressure insulating film on the low-pressure insulating film by converting the film-forming gas at second gas pressure, higher than the first gas pressure, into a plasma and reaction.

The present invention relates to a semiconductor device in which a barrier insulating film is formed to cover a copper film or a wiring consisting mainly of the copper film. The barrier insulating film is a structure of two or more layers including at least a first barrier insulating film containing silicon, oxygen, nitrogen and hydrogen or silicon, oxygen, nitrogen, hydrogen and carbon, and a second barrier insulating film containing silicon, oxygen and hydrogen or silicon, oxygen, hydrogen and carbon.

A semiconductor device having a barrier insulating film covering a copper wiring is formed by a plasma enhanced CVD method. The method includes supplying high frequency power of a frequency of 1 MHz or more to a first electrode, and holding a substrate on which copper wiring is formed on a second electrode facing the first electrode; supplying a film forming gas containing an alkyl compound and an oxygen-containing gas between the first and second electrodes while regulating gas pressure of the film forming gas to 1 Torr or less; and supplying high frequency power to either of the first and second electrodes to convert the film forming gas into a plasma, and allowing the alkyl compound and the oxygen-containing gas of the film forming gas to react to form a barrier insulating film covering the surface of the substrate.

A surface of a copper (Cu) wiring layer formed over a semiconductor substrate is exposed to a plasma gas selected from the group consisting of an ammonia gas, a mixed gas of nitrogen and hydrogen, a CF gas, a C F gas and a NF gas. The surface of the copper (Cu) wiring layer is then exposed to an atmosphere or a plasma of a gas selected from the group consisting of an ammonia gas, an ethylenediamine gas, a f&Agrave;-diketone gas, a mixed gas consisting of the ammonia gas and a hydrocarbon gas (C H ), and a mixed gas consisting of a nitrogen gas and the hydrocarbon gas (C H ), and a Cu diffusion preventing insulating film is formed on the copper (Cu) wiring layer.

Semiconductor device manufacturing method

The present invention relates to a manufacturing method of a semiconductor device in which a barrier insulating film and a main insulating film having low relative dielectric constant are sequentially formed while a wiring mainly consisting of copper film is coated. Its constitution includes the steps of: forming the barrier insulating film on a substrate subject to deposition, in which an electric power having a first frequency (f ) is applied to a first film forming gas containing at least silicon-containing gas and oxygen-containing gas to transform said first film forming gas into plasma and to cause reaction; and forming the main insulating film having low relative dielectric constant on the barrier insulating film , in which an electric power having a second frequency (f ) higher than the first frequency (f ) is applied to a second film forming gas containing at least the silicon-containing gas and the oxygen-containing gas to transform the second film forming gas into plasma and to cause reaction.

Manufacturing method of semiconductor device

The present invention discloses a film forming method for forming an insulating film having a low dielectric constant. This method comprises the steps of adding at least one diluting gas of an inert gas and a nitrogen gas (N ) to a major deposition gas component consisting of siloxane and N O, converting the resultant deposition gas into plasma, causing reaction in the plasma, and forming an insulating film or on a substrate targeted for film formation.

Film forming method, semiconductor device and manufacturing method of the same

There is provided the film forming method of forming the insulating film containing silicon on the substrate by plasmanizing the compound having the siloxane bonds and the oxidizing gas to react with each other.

Film forming method and semiconductor device

In a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant on a substrate from a surface of which a copper wiring is exposed, the interlayer insulating film consists of multi-layered insulating films and the insulating film , that contacts to the copper wiring , out of the multi-layered insulating films is formed by plasmanizing a film forming gas containing at least an alkyl compound having siloxane bonds and any one of nitrogen (N ) and ammonia (NH ) to react.

The present invention relates to a semiconductor device manufacturing method for forming a via hole or a contact hole in an interlayer insulating film with a low dielectric constant. The method includes the steps of forming a nitrogen containing insulating film on a substrate, forming a porous insulating film on the nitrogen-containing insulating film, forming an opening in the underlying insulating film and the porous insulating film, and forming a nitrogen containing insulating film on the surface of the porous insulating film and on the surface of the opening by bringing these surfaces into contact with a plasma of any one of an ammonia gas, a nitrogen gas, and an oxygen nitride gas.

Semiconductor device manufacturing method having a porous insulating film

Disclosed is a method of fabricating a semiconductor device, in which an interlayer insulating film having a low dielectric constant is formed by coating a wiring, and either a via hole or a contact hole is formed in the interlayer insulating film. The method of fabricating a semiconductor device having the interlayer insulating film formed on the film-formed substrate with the exposed wiring , comprises the step of converting a silicon compound containing only the Si, O, C and H into a plasma gas as a film-forming gas to react the plasma gas, thus forming the block insulating film containing silicon (Si), oxygen (O), carbon (C) and hydrogen (H) between the wiring and the interlayer insulating film

Fabrication of a semiconductor device with an interlayer insulating film formed from a plasma devoid of an oxidizing agent

There is provided a method of forming a silicon-containing insulating film on a substrate by reacting a compound having siloxane bonds and Si&mdash;R bonds (R is alkyl group) with a plasmanized reaction gas containing an oxidizing gas and H .

Film forming method, semiconductor device manufacturing method, and semiconductor device

A composition is provided which comprises catalase modified with a copolymer (A) and a second copolymer, i.e., copolymer (B). The copolymer (A) comprises an alkenyl ether, maleic anhydride, and at least one monomer selected from the group consisting of unsaturated carboxylic acid, vinyl compound and olefin, and copolymer (B) consists of an ethylenically unsaturated monomer and a monomer selected from the group consisting of a monomer having a carboxyl group and a monomer having an acid anhydride group, or a salt of the copolymer (B).

Growing community of inventors

Tokyo, Japan

Tomomi Suzuki