Nippon Telegraph and Telephone Corporation

Tomomi Sakata

Katsuyuki Machida

Hiromu Ishii

Masami Urano

Yasuyuki Tanabe

Toshishige Shimamura

Fusao Shimokawa

Mitsuhiro Makihara

Shingo Uchiyama

Hiroyoshi Togo

Mitsuo Usui

Nobuhiro Shimoyama

Shouji Yagi

A MEMS device includes a mirror substrate (), an electrode substrate () arranged so as to face the mirror substrate (), a mirror () serving as a movable member rotatably supported in an opening portion of the mirror substrate () via support members, a driving electrode () arranged on an insulating film () on a surface of the electrode substrate () facing the mirror substrate () so as to face the mirror () across a gap and drive the mirror (), and a lower electrode () made of a metal or a semiconductor and formed under the insulating film () exposed to the gap so as to be in contact with the insulating film ().

MEMS device and method of manufacturing the same

In a semiconductor device having a MEMS according to this invention, a plurality of units having movable portions for constituting a MEMS are monolithically mounted on a semiconductor substrate on which an integrated circuit including a driving circuit, sensor circuit, memory, and processor is formed. Each unit has a processor, memory, driving circuit, and sensor circuit.

Method of manufacturing a semiconductor device having MEMS

Semiconductor device having MEMS

In a micromachine according to this invention, a polyimide film is formed on the surface of each electrode. The polyimide film is formed as follows. A substrate having each electrode and a counterelectrode are dipped in an electrodeposition polyimide solution, and a positive voltage is applied to the electrode. A material dissolved in the electrodeposition polyimide solution is deposited on a surface of the positive-voltage-applied electrode that is exposed in the solution, thus forming a polyimide film on the surface.

Micromachine and manufacturing method

An optical switch for switching a light path between two optical waveguides is provided. The switch has a slit formed diagonally cutting across the crossing point of crossing optical waveguides and a substance in the slit has a function of transmitting or reflecting an optical signal is selectively held in the slit. The slit is narrower than cores of the optical waveguides, and has a center line formed on a bisection of an interior angle between optical axes of the crossing optical waveguides. Thus, the substance in the slit serves to make optical intensity reflected to each of the optical waveguides uniform. Further, a crossing optical waveguide consists of a reflecting structure having its interior filled with air during reflection and the intersecting angle between the first group of optical waveguides is between 0 to 90 degrees and preferably substantially between 73 and 74 degrees.

Optical switch

Growing community of inventors

Saitama, Japan

Tomomi Sakata