Dainippon Screen Mfg. Co., Ltd.

Screen Holdings Co., Ltd.

Kabushiki Kaisha Kobe Seiko Sho

Other

Ccs Corporation

Tomomi Iwata

Kimitsugu Saito

Yusuke Muraoka

Ikuo Mizobata

Tetsuya Emoto

Atsuro Eitoku

Ryuji Kitakado

Katsumi Watanabe

Yoichi Inoue

Hisanori Oshiba

Takashi Miyake

Akihiko Taki

Yoshihiko Sakashita

Shogo Sarumaru

Masahiro Yamagata

Hiromichi Kaba

Toru Edo

Kunio Yamada

Kenji Yoneda

Nobuyuki Kawakami

Takahiko Ishii

Takayoshi Tanaka

Tetsuya Yoshikawa

Jun Munemasa

Yuya Tsuchihashi

Eiji Fukatsu

Kaoru Masuda

Katsuyuki Iijima

Hiroyuki Ueno

Takashi Akiyama

Yuta Nakano

Takashi Gama

Akira Oato

Yasuo Okuyama

Masahiro Wakata

Teppei Nakano

Reo Tamura

A substrate processing apparatus includes a driving magnet that is disposed correspondingly to a movable pin and that has a predetermined polar direction with respect to a radial direction of a rotary table, a pressing magnet that has a magnetic pole that gives an attractive magnetic force or a repulsive magnetic force between the driving magnet and the pressing magnet and that presses a support portion against a peripheral edge of a substrate by urging the support portion toward a contact position by means of the attractive magnetic force or the repulsive magnetic force, and a pressing-force changing unit that changes a magnitude of a pressing force against the peripheral edge of the substrate pressed by the support portion while keeping the magnitude higher than zero in response to rotation of the rotary table.

Substrate processing apparatus

A low surface tension liquid is supplied from a low surface tension liquid supplying unit to a heated substrate to replace a processing liquid by the low surface tension liquid. The heating of the substrate is weakened and the low surface tension liquid is supplied from the low surface tension liquid supplying unit to the substrate, so that a liquid film of the low surface tension liquid is formed. The liquid film on the substrate is removed by strengthening the heating of the substrate without supplying the low surface tension liquid from the low surface tension liquid supplying unit to a central region of the substrate.

Substrate processing apparatus and substrate processing method

A substrate processing method includes a rinse liquid supplying step of supplying a rinse liquid containing water to a major surface of a substrate, a rotating step of rotating the substrate around a rotation axis passing through a central portion of the major surface of the substrate, and a hydrophobizing agent supplying step of supplying a hydrophobizing agent containing a first dissolving agent to the major surface of the substrate to replace a liquid held on the major surface of the substrate with the hydrophobizing agent in parallel with the rotating step after the rinse liquid supplying step is performed, and the hydrophobizing agent supplying step includes a hydrophobizing agent discharging step of discharging a continuous flow of the hydrophobizing agent from a discharge port of a nozzle toward the major surface of the substrate held by a substrate holding unit with a Reynolds number at the discharge port being not more than 1500.

Substrate processing method and substrate processing apparatus

A substrate processing method including a center portion discharging step of discharging a low-surface-tension liquid from a first low-surface-tension liquid nozzle disposed above a substrate toward the center portion of an upper surface, an inert gas supplying step of supplying inert gas to above the substrate in parallel with the center portion discharging step in order to form a gas flow flowing along the upper surface, and a peripheral edge portion discharging and supplying step of discharging the low-surface-tension liquid from a second low-surface-tension liquid nozzle disposed above the substrate toward a peripheral edge portion of the upper surface in parallel with the center portion discharging step and the inert gas supplying step.

Substrate processing method and substrate processing device

A mixing valve assemblyis communicated with a dedicated tankD, storing therein a compatibilizer D, via an inlet valveand is also communicated with dedicated tanksA-C via three injection valves, the tanks storing therein auxiliaries A-C respectively. A chemical formulation is prepared by selectively injecting any one(s) of four chemical agents into the mixing valve assemblyby way of on-off control of the inlet valveand the injection valves and blending together the injected chemical agents. Then, the chemical formulation is pumped into SCF by a high-pressure pumpsuch that the SCF and the chemical formulation are mixed together to form a process fluid. Thus, the number of components of a high-pressure portion can be reduced to achieve a cost reduction of an apparatus. Furthermore, a pipe line for pumping the chemical agents is simplified.

High-pressure processing apparatus and high-pressure processing method

Disclosed is a high pressure processing method for subjecting a processing object to a high pressure processing using a high pressure fluid. In this method, the high pressure fluid is brought into collision with the surface of the processing object placed in a high pressure processing chamber, and then distributed along the surface of the processing object in an outward direction beyond the processing object.

High pressure processing method and apparatus

Mixing bathsA andB which temporarily hold chemical agents A and B respectively are disposed. The mixing bathsA andB are each connected with a high-pressure fluid supplying unit. For surface treatment using a mixture of the chemical agent A and SCF (processing fluid), SCF is fed under pressure from the high-pressure fluid supplying unitto the mixing bathA which already holds the chemical agent A, whereby the chemical agent A dissolves in SCF flowing into the mixing bathA and the mixture of the chemical agent A and SCF (processing fluid) is created. As a high-pressure valve (processing fluid introducing valve)is opened, the processing fluid is sent into a pressure vessel. This achieves a predetermined surface treatment of a substrate which has been set inside the pressure vessel, using the processing fluid.

After subjected to a developing process, a rinsing process and a replacing process in this order in a developing unitA,B, a substrate W wet with an anti-drying solution is wet-transported to a supercritical drying unitby a primary transport robot. The supercritical drying unitperforms a high-pressure drying process (supercritical drying process) in a dedicated manner. Accordingly, by virtue of the presence of the anti-drying solution, the substrate W is effectively prevented from becoming air-dry during the transportation of the substrate W.

Substrate processing method, substrate processing apparatus and substrate processing system

An electric power supply system is provided to recognize a type or a desired operating condition of a connected LED lighting unit automatically and to supply electric power corresponding to the type or the operating condition. An electric power supply system for LED lighting unit comprises an LED lighting unitthat has an LED conducting circuit including at least an LEDand a resistorhaving resistance R corresponding to a specification or a characteristics of use of the LED conducting circuit and an electric power supply unitconsisting of a constant current supply that can be connected with both ends of the LED conducting circuit in order to supply electric power to the LED conducting circuit and is so arranged that a type identify portionconsisting of a resistor measuring circuit that can be connected with both ends of the resistor and a constant current control portionthat supplies a control current in an arbitrary range not over the maximum allowable current of the LED conducting circuit set based on the resistance of the resistor measured by the type identify portionto the LED conducting circuit.

Electric power supply system for LED lighting unit

With respect to any one of processing units, a main transportation path, a developing unit, a dedicated transportation robot and a high-pressure processing unit are disposed linearly in this order in a direction. Hence, even if a processing fluid adhering to a substrate or an evaporant of the processing fluid moves toward the main transportation path while the high-pressure processing unit transports the substrate wet with the processing fluid, there are the processing units located which the processing fluid or its evaporant must arrive at before reaching the main transportation path.

Substrate processing apparatus equipping with high-pressure processing unit

A method and system for processing a substrate includes performing a wet process by supplying a working liquid to a substrate in a wet processing apparatus, transferring the substrate in a non-dry state from the wet processing apparatus to a drying apparatus, and subjecting the substrate to a supercritical drying by a supercritical fluid in the drying apparatus.

Method and system for processing substrate

Liquid for prevention of substrate drying is supplied into a processing chamber so that a pool of the liquid is created as an anti-drying atmosphere in advance inside a processing chamber, and substrates, as they are dipped in the pool, are kept on stand-by in a substrate board. In this manner, air drying of the substrates which are kept on stand-by is prevented. When the number of the substrates in the substrate board reaches a certain number, the anti-drying atmosphere is removed from the processing chamber, which is followed by introduction of an SCF into the processing chamber and supercritical drying (high pressure drying) of all of the plurality of substrates inside the processing chamber, namely, batch supercritical drying.

High-pressure drying apparatus, high-pressure drying method and substrate processing apparatus

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Kyoto, Japan

Tomomi Iwata