Toyota Jidosha Kabushiki Kaisha

Denso Corporation

Hamamatsu-photonics K.k.

Mirise Technologies Corporation

National University Corporation Tokai National Higher Education and Research System

Tomomi Aratani

Daisuke Kawaguchi

Ryuji Sugiura

Chiaki Sasaoka

Masatake Nagaya

Jun Kojima

Shoichi Onda

Toshiki Yui

Keisuke Hara

Shosuke Nakabayashi

A manufacturing method of a semiconductor device, includes: forming a gas vent recess in a first surface of a compound semiconductor substrate, which includes a plurality of device regions adjacent to the first surface, along an interface between the plurality of device regions; forming an altered layer inside the compound semiconductor substrate to extend along the first surface at a depth corresponding to a range of a depth of the gas vent recess by applying a laser beam; dividing the compound semiconductor substrate at the altered layer into a first part including the first surface and a second part including a second surface of the compound semiconductor substrate opposite to the first surface; and forming a metal film to cover a divided surface of the first part while exposing the gas vent recess.

Manufacturing method of semiconductor device

Growing community of inventors

Hamamatsu, Japan

Tomomi Aratani