Lapis Semiconductor Co., Ltd.

Tomoko Yonekura

Kenichi Furuta

Toshiyuki Orita

Yoshinobu Takeshita

Tsuyoshi Inoue

Toshifumi Kobe

Masahiro Haraguchi

Kiyofumi Kondo

The semiconductor device includes a semiconductor substrate of first conductivity type including a cell area and a peripheral area surrounding cell area on a principal surface thereof, a first diffusion layer which is disposed in peripheral area, surrounds the cell area and has a second conductivity type different from the first conductivity type, an electrode which is disposed in the peripheral area, is in contact with the principal surface through an opening provided in an insulating member and is connected to the first diffusion layer, and a second diffusion layer of the first conductivity type which is formed on the principal surface of a region enclosed in the electrode distant from the first diffusion layer when viewed in a direction perpendicular to the principal surface and includes a linear portion having a first width and a curved portion having a portion with a second width greater than the first width.

Semiconductor device

A semiconductor device including a semiconductor substrate; a conductive film covering a front face of the semiconductor substrate, a front face of the conductive film having plural straight-line shaped concave portions disposed in parallel to each other; and a protecting film covering the front face of the conductive film, the protecting film having an opening that has an edge forming an angle with the plural concave portions of greater than 0&#xb0; and less than 90&#xb0;, and that partially exposes the conductive film.

Growing community of inventors

Miyazaki, Japan

Tomoko Yonekura