Nec Corporation

Tomoko Yasunaga

Seiichi Shishiguchi

Akira Mineji

A method of manufacturing a semiconductor device having a silicon substrate containing an impurity diffusion layer is disclosed, that comprises the steps of doping impurities to the silicon substrate through a silicon oxide film with a thickness of 2.5 nm or less at an accelerating voltage of 3 keV or less, the silicon oxide film being formed on the silicon substrate and annealing the silicon substrate with the oxide film left.

Method of manufacturing semiconductor device having shallow junction

A fabrication method of a semiconductor device with an IGFET is provided, which makes it possible to decrease the current leakage due to electrical short-circuit between a gate electrode and source/drain regions of the IGFET through conductive grains deposited on its dielectric sidewalls. After the basic structure of the IGFET is formed, first and second single-crystal Si epitaxial layers are respectively formed on the first and second source/drain regions by a selective epitaxial growth process. Then, the surface areas of the first and second single-crystal Si epitaxial layers are oxidized, and the oxidized surface areas of the first and second single-crystal Si epitaxial layers are removed by etching. If unwanted grains of poly-Si or amorphous Si are grown on the first and second dielectric sidewalls in the selective epitaxial growth process, the unwanted grains are oxidized and removed, thereby preventing electrical short-circuit from occurring between the gate electrode and the first and second source/drain regions through the unwanted grains deposited on the first and second dielectric sidewalls.

Fabrication method of semiconductor device using selective epitaxial growth

The present invention provides a method of forming gate side wall insulation films on side walls of a gate electrode on a gate insulation film over a silicon substrate surface. The method comprises The following steps. Gate side wall insulation films are selectively formed on side walls of a gate electrode. A silicon film is selectively grown on at least any one of a top of the gate electrode and on the silicon substrate surface. Surface regions of the gate side wall insulation films are etched.

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Tokyo, Japan

Tomoko Yasunaga