Coorstek Kk

Tomoko Watanabe

Jun Komiyama

Yoshihisa Abe

Hiroshi Oishi

Kenichi Eriguchi

Noriko Omori

The present invention provides a nitride semiconductor substrate having an initial nitride and a nitride semiconductor sequentially stacked on one principal plane of a base substrate, wherein the nitride semiconductor substrate comprises recesses depressed from an interface between the base substrate and the initial nitride toward the base substrate along one arbitrary cross section; the recesses each have a diameter of 6 nm or more and 60 nm or less and are formed at a density of 3&#xd7;10pieces/cmor more and 1&#xd7;10pieces/cmor less; and the recess preferably has a depth of 3 nm or more and 45 nm or less from the interface between the base substrate and the initial nitride toward the base substrate.

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Hadano, Japan

Tomoko Watanabe