Kabushiki Kaisha Toshiba

Tomoko Morioka

Shinya Nunoue

Hiroshi Ono

Toshiki Hikosaka

Toshiyuki Oka

Naotada Okada

Taisuke Sato

Hidefumi Yasuda

Yuko Kato

Toshitake Kitagawa

Kazufumi Shiozawa

An ultrasonic inspection device includes: a vibration generating section that irradiates laser beam onto a first member to generate ultrasonic vibration; a detecting section that detects the ultrasonic vibration propagated from the first to a second members via a welded portion; and an analyzing section that analyzes the propagated ultrasonic vibration detected by the detecting section. The analyzing section obtains at least one of frequency and wavelength of the ultrasonic vibration detected by the detecting section upon when a displacement in the second member in a thickness direction becomes maximum. The analyzing section obtains a cross sectional dimension of the welded portion from a correlated relationship of the cross sectional dimension of the welded portion obtained in advance at a position on a surface of the second member on the first member side and the at least one of the frequency and wavelength of the ultrasonic vibration.

Ultrasonic inspection device and method of ultrasonic inspection

According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer and a light emitting part. The first semiconductor layer includes an n-type semiconductor layer. The second semiconductor layer includes a p-type semiconductor layer. The light emitting part is provided between the first semiconductor layer and the second semiconductor layer, and includes a plurality of barrier layers and a well layer provided between the plurality of barrier layers. The first semiconductor layer has a first irregularity and a second irregularity. The first irregularity is provided on a first major surface of the first semiconductor layer on an opposite side to the light emitting part. The second irregularity is provided on a bottom face and a top face of the first irregularity, and has a level difference smaller than a level difference between the bottom face and the top face.

Semiconductor light emitting device and method for manufacturing the same

According to one embodiment, a semiconductor light emitting device includes a substrate, a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a translucent electrode. The substrate includes a first region provided along periphery of a first major surface and a second region provided on center side of the first major surface as viewed from the first region. The first semiconductor layer is provided on the first major surface of the substrate. The light emitting layer is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting layer. The translucent electrode is provided on the second semiconductor layer. A reflectance in the second region is higher than a reflectance in the first region.

Semiconductor light emitting device and method for manufacturing semiconductor light emitting device

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Kanagawa-ken, Japan

Tomoko Morioka