Seiko Epson Corporation

Cambridge Display Technology Limited

Other

Tomoko Koyama

Takeo Kaneko

Jeremy H Burroughes

Tatsuya Shimoda

Atsushi Harada

Taketomi Kamikawa

Norio Oguchi

Hiromu Miyazawa

Mutsumi Kimura

Harunobu Komatsu

Masamitsu Mochizuki

Hajime Onishi

Eiichi Fujii

Kanemitsu Kubota

Jeremy H Cambridge Dis Tech Ltd Burroughes

A multiple wavelength light emitting device is provided wherewith the resonance strength and directivity between colors can be easily adjusted for balance. This light emitting device comprises a light emission meansfor emitting light containing wavelength components to be output, and a semi-reflecting layer groupwherein semi-reflecting layersR,G, andB that transmit some light having specific wavelengths emitted from the light emission means and reflect the remainder are stacked up in order in the direction of light advance in association with wavelengths of light to be output. Light emission regions A, A, and Aare determined in association with the wavelengths of light to be output. The configuration is such that, in the light emission regions, the distances L, Land Lbetween a reflecting surface for fight from the light emission means side of the semi-reflecting layersR,G, andB that reflect light output from those light emission regions and a point existing in an interval from the end of the light emitting layer on the semi-reflecting layer group side to the reflecting layer are adjusted so as to have an optical path length at which that light resonates.

Multiple wavelength light emitting device, electronic apparatus, and interference mirror

An atomic frequency acquisition apparatus includes: a cell enclosing atomic gas therein; a laser light source that oscillates a laser light that enters the cell and excites the atomic gas; and a photodetecting section that detects the laser light that has passed through the cell, wherein the cell has at least a laser light reflection section inside thereof.

Atomic frequency acquiring apparatus and atomic clock

A method of manufacturing directional coupler includes forming a first waveguide over a substrate, forming a separate section on respective ends of the first waveguide, and forming a second waveguide stacked over the first waveguide, wherein the first waveguide and the second waveguide are patterned by ink-jet process. The first waveguide and the second waveguide may be formed so as to overlap each other. The method may further include forming a projecting portion on the substrate, wherein the first waveguide being formed on the projection portion.

Method of manufacturing directional coupler

A surface-emitting type device includes a rectification section including a substrate and a first semiconductor layer formed above the substrate, an emission section including a second semiconductor layer of a first conductivity type formed above the rectification section, an active layer formed above the second semiconductor layer and a third semiconductor layer of a second conductivity type formed above the active layer, and a photodetection section including the substrate, a photoabsorption layer formed above the substrate and a contact layer formed above the photoabsorption layer, wherein the first semiconductor layer and the contact layer are formed by a common process, the rectification section and the emission section are electrically connected in parallel with each other, and the rectification section has a rectification action in a reverse direction with respect to the emission section.

Surface emitting type device having a resistance to damage by static electricity

An optical element includes a surface-emitting type semiconductor laser, and a light-receiving element that detects a part of laser light emitted from the surface-emitting type semiconductor laser, wherein the light-receiving element is formed above the surface-emitting type semiconductor laser and includes a semiconductor layer having one or more layers, and at least one of the layers in the semiconductor layer has a plane configuration that has anisotropy.

Optical element

An atomic frequency acquisition apparatus includes: a cell enclosing atomic gas therein; a laser light source that oscillates laser light that enters the cell and excites the atomic gas; and a photodetecting section that detects the laser light that has passed the cell, wherein the laser light source and the photodetecting section are attached to a common surface facing an interior of the cell, and the cell has a first reflection section on which the laser light oscillated from the laser light source is incident at an incident angle of 45 degrees, and a second reflection section on which the laser light reflected by the first reflection section is incident at an incident angle of 45 degrees.

A surface-emitting type device includes a rectification section including a substrate and a first semiconductor layer formed above the substrate, and an emission section including a second semiconductor layer of a first conductivity type formed above the rectification section, an active layer formed above the second semiconductor layer and a third semiconductor layer of a second conductivity type formed above the active layer, wherein the rectification section and the emission section are electrically connected in parallel with each other, and the rectification section has a rectification action in a reverse direction with respect to the emission section.

Surface emitting type device, and method for manufacturing the same

A method is provided to precisely mount an optical device and an optical fiber without manual alignment. A tapered through-hole is provided in a substrate to house the optical device whose optical transmission point substantially coincides with a geometrical center. The optical transmitter having a larger diameter than a diameter of the optical device is further inserted in the tapered through-hole housing the optical device.

Manufacturing method of optical communication module, optical communication module, and electronic apparatus

An optical element includes a substrate, a surface-emitting type semiconductor laser above the substrate and including a first mirror, an active layer and a second mirror formed in this order from the substrate side, a first optical detection section formed above the substrate, a second optical detection section above the substrate and having a second photoabsorption layer, and an isolation layer between the surface-emitting type semiconductor laser and at least one of the first optical detection section and the second optical detection section. The first optical detection section includes a first photoabsorption layer above the substrate and a photonic crystal section above or below the first photoabsorption layer. The photonic crystal section has a one or a two dimensional photonic crystal structure having a periodic refractive index distribution in a plane that intersects a direction of light incident upon the first optical detection section.

Optical element, optical module, and optical transmission device

A light-emitting device includes a light-emitting layer capable of generating light by electroluminescence, a pair of electrodes applies an electric field to the light-emitting layer, and a substrate having a depression in a surface, and the light-emitting layer is disposed within the depression of the substrate.

Light-emitting device and electronic instrument

A method is provided to provide a photodetector that can enhance the light receiving sensitivity with a relatively simple structure, and that can maintain a high speed responsiveness. A photodetector having a MSM (Metal-Semiconductor-Metal) structure, including a substrate, a multilayer film that is disposed over the substrate and includes a low refractive index layer and a high refractive index layer that are alternately laminated as a unit cycle. At least one of the low refractive index layer and the high refractive index layer is a photoabsorption layer composed of semiconductor, and a portion that is embedded in the multilayer film, the portion having at least one pair of opposing electrodes within the multilayer film. The multilayer film is formed such that a wavelength region corresponding to a band edge of a photonic band overlaps at least a part of an absorption band of the photoabsorption layer, to thereby delay a group velocity of incidence light Pin with a predetermined wavelength that belongs to the absorption band of the photoabsorption layer.

Photodetectors, optical modules, and optical transmission devices

The invention provides an optical multiplexing and demultiplexing device using a two-dimensional photonic crystal, in which miniaturization and higher integration thereof can be achieved; an optical communication apparatus; and an optical communication system. The optical multiplexing and demultiplexing device of the present invention includes a substrate; and a plurality of slab layers provided on the substrate. The slab layers each have a two-dimensional photonic crystal structure, in which low refractive index regions are periodically arranged. In addition, the slab layers have line defects, provided in part of the periodical arrangement so as to function as a waveguide, and at least point defects formed in the respective periodic arrangements, the point defects capturing light having a specific wavelength and introducing it to the line defects or capturing light having a specific wavelength from the line defects and radiating it. The point defects, which capture light having the same wavelength, provided in the slab layers are disposed so as to oppose each other.

Growing community of inventors

Hara-mura, Japan

Tomoko Koyama