Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Tomoko Komatsu

Tomoki Masuda

Toshihiro Higuchi

Masanori Minamio

Toshiyuki Fukuda

Yasuo Takeuchi

Kiyokazu Itoi

Mamoru Honjo

Naoki Tomoda

Michihiro Yamagata

Yasuhiro Tanaka

Nobukazu Teranishi

Tetsushi Nishio

Tomohiko Sasano

Sumio Terakawa

Yoshikazu Sano

Yutaka Harada

Tsuyoshi Ichinose

Michiyo Ichikawa

Masashi Kuroda

Hiromitu Aoki

A solid-state image sensing device comprises: a light receiving unit for receiving light; a microlens formed above the light receiving unit; a fluorine-containing resin material layer formed on the microlens; and a transparent substrate provided over the fluorine-containing resin material layer. A resin layer adheres the fluorine-containing resin material layer and the transparent substrate.

Solid-state image sensing device

A solid state imaging device of the present invention comprises: a semiconductor substrate; a plurality of light receiving elements arranged in a matrix configuration on the semiconductor substrate; a plurality of color filter segments provided above the light receiving elements; and a light collector provided above the color filter segments for collecting light on the light receiving elements. The color filter segments are mutually separated by interstices. The interstices contain a gas.

Solid state imaging device and fabrication method thereof, and camera incorporating the solid state imaging device

Provided is a manufacturing method of a solid-state imaging device, which is able to realize a solid-state imaging device whose reflection prevention coating is even and that does not have image noise in case of adopting a spincoating method in applying a material of the reflection prevention coating onto microlenses of the solid-state imaging device. In the solid-state imaging deviceaccording to the present invention, a barrier wall patternis formed, as a step alleviating structure, in dicing areasX formed between adjacent imaging areas. The barrier wall patternhas a rectangular sectional form. With use of the barrier wall patternin the spincoating method, reflection prevention coatingis coated onto the microlensesmore evenly than in conventional cases.

Solid-state imaging device

Solid-state image sensing device having a layer on microlens and method for fabricating the same

A semiconductor image sensing element has a semiconductor element including an image sensing area, a peripheral circuit region, a plurality of electrode portions provided in the peripheral circuit region, and a plurality of micro-lenses provided on the image sensing area and an optical member having a configuration covering at least the image sensing area and bonded over the micro-lenses via a transparent bonding member. The side surface region of the optical member is formed with a light shielding film for preventing the irradiation of the image sensing area with a reflected light beam or a scattered light beam from the side surface region.

Semiconductor image sensing element and fabrication method therefor, and semiconductor image sensing device and fabrication method therefor

Provided is a solid-state image pickup device capable of suppressing deterioration of characteristic caused due to an antireflection film itself absorbing a light. In the solid-state image pickup device of the present invention, a plurality of color filtersandhaving spectral characteristics, respectively, different from each other are provided so as to correspond to a plurality of light reception sectionsrespectively, aligned on a semiconductor substrateFurther, a plurality of microlensesare provided above the plurality of color filtersandrespectively. A plurality of antireflection filmsare selectively formed on surfaces of the microlensesprovided above color filterseach having a predetermined spectral characteristic.

Solid-state image pickup device

An optical device includes a substrate, a plurality of optical elements formed in an element formation region of the substrate, a plurality of lenses formed over the element formation region so as to correspond to the plurality of optical elements, and a protective layer formed so as to cover the plurality of lenses. A holding member is formed on the protective layer in a region outside the element formation region. The holding member holds a bottom surface of a transparent member. A gap between the protective layer and the transparent member is filled with an adhesive.

Optical device and manufacturing method thereof

A solid state imaging device includes: a solid state imaging element including a light receiving element, a microlens formed above the light receiving element, a first transparent layer formed on the microlens and a second transparent layer formed on or above the microlens and harder than the first transparent layer; a transparent component formed above the second transparent layer; and an adhesive layer for bonding the second transparent layer and the transparent component. The hard second transparent layer prevents the occurrence of scratches during a dicing step.

Solid state imaging device and method for manufacturing the same

A semiconductor imaging device includes: a semiconductor imaging element including an imaging region, a peripheral circuit region, and an electrode region, the imaging region including a plurality of micro lenses; a semiconductor package the semiconductor package in which a cavity for mounting the semiconductor imaging element is formed, the semiconductor package including a plurality of internal connection terminals formed inside the periphery of the cavity for being connected with a plurality of electrode terminals of the semiconductor imaging element and a plurality of external connection terminals connected with the internal connection terminals; a fixing member for fixing the semiconductor imaging element to the cavity; and an optical member fixed to the semiconductor package by a sealing member so as to cover the semiconductor imaging element arranged in the cavity. Wherein, a face obtained by connecting vertexes of the micro lenses is formed into a continuous concave curve.

Semiconductor imaging device and method for manufacturing the same

In a lens array, a multiplicity of condenser lenses, each in a convex lens form, are arrayed in vertical and horizontal directions so as to correspond to pixel regions, respectively, and each condenser lens, when viewed from a direction perpendicular to a condenser lens-arrayed plane, takes a planar shape formed with a four straight sides along four sides of the pixel region and four circular arcs extending between the respective straight sides. A center of the four circular arcs substantially coincides with a center of the corresponding pixel region. This ensures an increase in area covered with the condenser lens in the pixel region, thereby causing more light rays to enter the condenser lens. In addition, a radius of curvature necessary for collecting can be obtained more easily. Consequently, light rays can be efficiently collected and guided to light receiving sections or the like provided in the pixel regions. Accordingly, sensitivity is improved when such a lens array is used in a solid-state imaging element, while luminance of a screen is improved when it is used in a panel display element. Besides, such a lens array is easily manufactured.

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Kyoto, Japan

Tomoko Komatsu