Hitachi, Ltd.

Renesas Technology Corp.

Hitachi Ulsi Systems Co., Ltd.

Tomoko Jinbo

Takashi Hashimoto

Hidenori Sato

Katsuhiko Ichinose

Tatsuya Tominari

Tsutomu Udo

Yukino Ishii

Provided is a manufacturing method of a semiconductor device, which comprises exposing a surface of a semiconductor substrate on which a heterocrystalline layer is to be grown inside of a second emitter opening portion of a hetero-junction bipolar transistor, removing water by preheat treatment in a reducing gas atmosphere, subjecting the substrate to second heat treatment in a reducing gas atmosphere at a temperature which is higher than the preheating treatment but does not adversely affect the impurity concentration distribution of another element on the semiconductor substrate, thereby removing an oxide film formed on the surface on which the heterocrystalline layer is to be grown, and then selectively causing epitaxial growth of the heterocrystalline layer on the thus cleaned surface in the second emitter opening portion. According to the present invention, reliability of a semiconductor device having a hetero-junction bipolar transistor can be improved.

Method for manufacturing semiconductor device

A CVD device () used for depositing a silicon nitride has a structure in which a hot wall furnace () for thermally degrading a source gas and a chamber () for forming a film over a surface of a wafer () are separated from each other. The hot wall furnace () for thermally degrading the source gas is provided above the chamber (), and a heater () capable of setting the inside of the furnace at a high temperature atmosphere of approximately 1200&#xb0; C. is provided at the outer periphery thereof. The source gas, supplied to the hot wall furnace () through pipes () and (), is thermally degraded in this furnace in advance, and degraded components thereof are supplied on a stage () of the chamber () to form a film on the surface of the wafer ().

Method of manufacturing a semiconductor integrated circuit device

Growing community of inventors

Akishima, Japan

Tomoko Jinbo