Renesas Electronics Corporation

Renesas Technology Corp.

Other

Hitachi Ulsi Systems Co., Ltd.

Tomoko Higashino

Chuichi Miyazaki

Yoshiyuki Abe

Hideo Mutou

Tamaki Wada

Kazunari Suzuki

Masachika Masuda

Michiaki Sugiyama

Takafumi Nishita

Toshihiro Shiotsuki

Hiroshi Ohno

Kunihiro Tsubosaki

Hidekazu Matsuura

Takashi Wada

Takehiro Shimizu

Yoshihiro Nomura

Yuichi Morinaga

Takafumi Dohdoh

Kazuya Tsuboi

Kazumi Tameshige

To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented.

Semiconductor device manufacturing method and semiconductor device

A semiconductor wafer with modified regions formed in the substrate is provided. A modified region is formed apart from the side of a wafer and a pad is formed over an insulating film, which is formed over the main surface of the substrate of the wafer. Further, the modified region is formed closer to the side surface of the substrate than the pad. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented.

Semiconductor chip with modified regions for dividing the chip

To provide a semiconductor device having an improved quality. The semiconductor device of the invention has a tape substrate having a semiconductor chip thereon, a plurality of land pads placed around the semiconductor chip, a plurality of wires for electrically coupling the electrode pad of the semiconductor chip to the land pad, and a plurality of terminal portions provided on the lower surface of the tape substrate. An average distance between local peaks of the surface roughness of a first region between the land pad of the tape substrate and the semiconductor chip is smaller than an average distance of local peaks of the surface roughness of a second region between the land pad of the tape substrate and the first region.

Method of manufacturing semiconductor device

Semiconductor device manufacturing method using laser irradiation and dicing saw and semiconductor device thereof

Semiconductor device manufacturing method comprising a metal pattern and laser modified regions in a cutting region

A semiconductor wafer is mounted onto a dicing tape, the dicing tape comprising a first tape easy to stretch and a second tape difficult to stretch and provided on the first tape. Thereafter, a ring-shaped jig is mounted onto the dicing tape along the outer periphery of the semiconductor wafer and the semiconductor wafer is diced. Subsequently, the dicing tape is stretched from the outer periphery thereof to widen the spacing between adjacent chips. Thus, the dicing tape is stretched from its outer periphery in a state in which there are formed an area of the dicing tape underlying the semiconductor wafer and easy to stretch and an area of the dicing tape located along the outer periphery of the wafer and difficult to stretch. Consequently, the force of stretching the dicing tape is transmitted to the semiconductor wafer-mounted area of the first tape, thus permitting pickup of each chip in a sufficiently widened state of the spacing between adjacent chip-forming areas. The semiconductor device manufactured by this method is improved in reliability.

Manufacturing method of a semiconductor device

The semiconductor device having the structure which laminated the chip in many stages is made thin. A reforming area is formed by irradiating a laser beam, where a condensing point is put together with the inside of the semiconductor substrate of a semiconductor wafer. Then, after applying the binding material of liquid state to the back surface of a semiconductor wafer by a spin coating method, this is dried and a solid-like adhesive layer is formed. Then, a semiconductor wafer is divided into each semiconductor chip by making the above-mentioned reforming area into a division origin. By pasting up this semiconductor chip on the main surface of an other semiconductor chip by the adhesive layer of the back surface, the semiconductor device having the structure for which the semiconductor chip was laminated by many stages is manufactured.

Semiconductor device and a manufacturing method of the same

In a semiconductor device in which a plurality of semiconductor chips are stacked on a mounting substrate, an adhesive material formed of resin mainly having a thermosetting property is applied to a semiconductor chip mounting region on the mounting substrate. After mounting semiconductor chips on the adhesive material, the adhesive material is cured by heat treatment. When these parts are naturally cooled to a normal temperature, the mounting substrate warps in a convex shape due to the difference in an &#x3b1; value between the mounting substrate and the semiconductor chip. However, pads are connected by wire bonding and, an adhesive material formed of resin having a thermoplastic property is laminated to the semiconductor chip. Then, a spacer chip is bonded to the adhesive material by thermal compression bonding. Accordingly, due to heat generated at the time of thermal compression bonding, the mounting substrate and the semiconductor chip become substantially flat.

Method of manufacturing a semiconductor device

A contact collect is provided to prevent damage to the top surface of a semiconductor chip at the time of die bonding the semiconductor chip. A protection tape is pasted to the top surface of the semiconductor chip before die bonding of the semiconductor chip is executed by pressing the back surface (underside) of the semiconductor chip sucked and securely held by the contact collect against respective chip-mounting regions of a multi-wiring board. The contact collect is, for example, substantially cylidrical in outside shape, and a bottom part (suction head) thereof is made of soft synthetic rubber, etc. The protection tape pasted to the top surface of the semiconductor chip prevents the top surface of the semiconductor chip from directly contacting with the contact collect even at the time of vacuum suction by pressing the suction head of the contact collect against the top surface of the semiconductor chip.

Two semiconductor chips are bonded to each other with the rear surfaces of the respective semiconductor chips faced to each other, so that two longer sides of the semiconductor chips may confront the side of leads, and supporting leads are bonded and fixed onto the circuit forming surface of one of the semiconductor chips. The semiconductor chips are further bonded to each other in a state where the positions of the respective semiconductor chips are staggered relative to each other so that electrodes of one semiconductor chip may lie outside the other longer side of the other semiconductor chip, and that electrodes of the second semiconductor chip may lie outside the other longer side of the first semiconductor chip.

Semiconductor device and process for manufacturing the same

Semiconductor device and method of manufacture thereof

Insulating adhesive for electronic parts, and lead frame and semiconductor device using the same

Growing community of inventors

Tokyo, Japan

Tomoko Higashino