Nichia Corporation

Tomoki Tanisada

Masafumi Kuramoto

Toshifumi Imura

Hirofumi Ichikawa

Yasunori Shimizu

A semiconductor device includes a semiconductor element, a base body, a conductive adhesive member, and a sealing member. The semiconductor element includes a substrate, a semiconductor element structure provided on the substrate, and p-electrode and n-electrode provided on the semiconductor element structure. The semiconductor element is disposed on the base body. The conductive adhesive member electrically connects the p-electrode and the n-electrode to the base body. The sealing member is provided to cover the semiconductor element on an upper surface of the base body. The conductive adhesive member contains particles selected from a group of (i) surface-treated particles having a particle diameter of 1 nm or more and 100 &#x3bc;m or less and (ii) particles that coexist with a dispersing agent.

Light emitting element including adhesive member containing particles

A semiconductor device in which wet-spreading of an adhesive member for bonding the semiconductor element on a base body is suppressed. The semiconductor device includes a base body, and a semiconductor element bonded on the base body via an adhesive member. The adhesive member contains surface-treated particles, or particles that coexist with a dispersing agent. At least a part of the marginal portion of the adhesive member is a region where the particles are unevenly distributed.

Semiconductor device having semiconductor element bonded to base body by adhesive member

A light emitting device includes at least one light emitting element including a plurality of semiconductor layers; and a light transmissive sealing member covering the at least one light emitting element. The light transmissive sealing member comprises a light transmissive sealing resin containing a silicone resin having a siloxane bond scaffold having methyl and phenyl groups as a principal ingredient. The light transmissive sealing resin has a refractive index in a range between 1.45 and 1.52, a durometer type D hardness at 25&#xb0; C. specified by JIS K 6253 in a range between 20 and 70, and a DMA tan &#x3b4;-based glass transition temperature (Tg) in a range between 20&#xb0; C. and 70&#xb0; C.

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Anan, Japan

Tomoki Tanisada