Jsr Corporation

Tokyo Electron Limited

Osaka University

Central Glass Company, Limited

Tomoki Nagai

Takehiko Naruoka

Hiroyuki Komatsu

Shinya Minegishi

Tsutomu Shimokawa

Hisashi Nakagawa

Takuma Ebata

Makoto Shimizu

Hitoshi Osaki

Eiji Yoneda

Jun Numata

Kaori Sakai

Yuji Namie

Junichi Takahashi

Yukio Nishimura

Takuo Sone

Seiji Nagahara

Daisuke Shimizu

Masaaki Miyaji

Miki Tamada

Hiroyuki Ishii

Masato Tanaka

Makoto Sugiura

Hiroshi Ikeda

Masaki Fujiwara

Akihiro Oshima

Seiichi Tagawa

Eiichi Kobayashi

Masafumi Yamamoto

Yuji Yada

Takayuki Tsuji

Toru Kajita

Takanori Kawakami

Keiji Konno

Momoko Ishii

Yuuji Yada

Fumihisa Miyajima

Satoru Narizuka

Ken Maruyama

Hirokazu Sakakibara

Masafumi Hori

Yong Wang

Yusuke Asano

Kazuo Nakahara

Haruo Iwasawa

Mitsuo Sato

Jonathan Joachim Jodry

Nobuji Matsumura

Motohiro Shiratani

Tomohiro Oda

Takayoshi Abe

Kentarou Gotou

Satoshi Ebata

Yoshifumi Oizumi

Tatsuya Toneri

Tomohiro Kakizawa

Shirou Kusumoto

Kentarou Harada

Kenichi Yokoyama

A modification method of a surface of a substrate includes: applying a composition on a surface of a metal substrate, and heating a coating film formed by the applying, wherein the composition contains: a polymer having a first structural unit that includes an aromatic ring, and a second structural unit that includes an ethylenic double bond; a thermal acid generating agent; and a solvent, wherein the polymer has a functional group capable of bonding to a metal atom in the metal substrate.

Modification method of substrate surface, and composition and polymer

A pattern-forming method includes forming a prepattern and including a first polymer is formed on a silicon-containing film on a substrate. An underlayer film including a second polymer is formed in recessed portions of the prepattern. A composition for directed self-assembled film formation including a third polymer is applied on the underlayer film and the prepattern. The first polymer includes a first structural unit. The second polymer includes: a molecular chain including the first structural unit and a second structural unit that differs from the first structural unit; and an end structure that bonds to one end of the molecular chain and includes at least one selected from the group consisting of an amino group, a hydroxy group and a carboxy group. The third polymer is a block copolymer including a block of the first structural unit and a block of the second structural unit.

Pattern-forming method and patterned substrate

A modification method of a surface of a base includes applying a composition on a surface layer of a base to form a coating film. The surface layer contains a metal atom. The coating is heated. The composition contains a polymer and a solvent. The polymer includes at an end of a main chain or at an end of a side chain thereof, a functional group that is at least one selected from: a group represented by the following formula (1); a group containing a carbon-carbon triple bond; and a group containing an aromatic hydroxy group. In the formula (1), Rrepresents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and n is an integer of 1 to 10, wherein in a case in which n is no less than 2, a plurality of Rs are identical or different. 

Modification method of surface of base, composition, and polymer

A pattern-forming method includes: forming a pattern on an upper face side of a substrate; applying a first composition to a sidewall of the pattern; forming a resin layer by applying a second composition to an inner face side of the sidewall of the pattern coated with the first composition; allowing the resin layer to separate into a plurality of phases; and removing at least one of the plurality of phases. The first composition contains a first polymer. The second composition contains a second polymer. The second polymer includes a first block having a first structural unit and a second block having a second structural unit. The polarity of the second structural unit is higher than the polarity of the first structural unit. Immediately before forming of the resin layer, a static contact angle &#x3b8; (&#xb0;) of water on the sidewall of the pattern satisfies inequality (1). 

Pattern-forming method, and composition

A radiation-sensitive composition includes: a first polymer having a first structural unit that includes an acid-labile group; and a first compound including a metal cation and a first anion that is a conjugate base of an acid. The acid has a pKa of no greater than 0. The acid is preferably sulfonic acid, nitric acid, organic azinic acid, disulfonylimidic acid or a combination thereof. The first compound is preferably represented by formula (1). In the formula (1), M represents a metal cation; A represents the first anion; x is an integer of 1 to 6; Rrepresents a &#x3c3; ligand; and y is an integer of 0 to 5, and a sum: x+y is no greater than 6. The van der Waals volume of the acid is preferably no less than 2.5&#xd7;10m.[AMR]&#x2003;&#x2003;(1)

Radiation-sensitive composition, pattern-forming method and radiation-sensitive acid generating agent

A directed self-assembling composition for pattern formation includes a block copolymer. The block copolymer includes a polystyrene block having a styrene unit, and a polyalkyl (meth)acrylate block having an alkyl (meth)acrylate unit. The block copolymer has a group that is bound to at least one end of a main chain of the block copolymer and that includes a hetero atom.

Composition and pattern-forming method

A block copolymer includes a polystyrene block including a styrene unit, and a polyalkyl (meth)acrylate block including an alkyl (meth)acrylate unit. The block copolymer includes an organic group that is bound to at least one end of a main chain of the block copolymer and that comprises a hetero atom. A polymerization initiation end of the block copolymer includes a structure derived from an alkyl lithium. The organic group included in the block copolymer includes a nitrogen atom, a sulfur atom, a phosphorus atom, a tin atom, or a combination thereof, or is represented by formula (1). Rrepresents a single bond or a divalent organic group having 1 to 30 carbon atoms; and Rrepresents a hydrogen atom, an aliphatic linear hydrocarbon group having 1 to 30 carbon atoms, an alicyclic hydrocarbon group having 3 to 30 carbon atoms, or the like. 

Block copolymer

A composition for a base of a directed self-assembling film includes a compound including an oxo acid group, and a solvent. The compound is preferably represented by formula (1). A represents an organic group having 10 or more carbon atoms and having a valency of n. B represents an oxo acid group. n is an integer of 1 to 200. In a case where n is 2 or greater, a plurality of Bs are identical or different.AB)&#x2003;&#x2003;(1)

Composition for base, and directed self-assembly lithography method

A chemically amplified resist material comprises: a polymer component that is capable of being made soluble or insoluble in a developer solution by an action of an acid; and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The polymer component comprises: a first polymer comprising a first structural unit that comprises a fluorine atom and does not comprise a salt structure; or a second polymer comprising a second structural unit that comprises a fluorine atom and a salt structure. The generative component comprises: a radiation-sensitive acid-and-sensitizer generating agent; any two of the radiation-sensitive acid-and-sensitizer generating agent, a radiation-sensitive sensitizer generating agent and a radiation-sensitive acid generating agent; or the radiation-sensitive acid-and-sensitizer generating agent, the radiation-sensitive sensitizer generating agent and the radiation-sensitive acid generating agent.

Chemically amplified resist material and resist pattern-forming method

A pattern-forming method comprises patternwise exposing a predetermined region of a resist material film made from a photosensitive resin composition comprising a chemically amplified resist material to a first radioactive ray that is ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to a second radioactive ray that is nonionizing radiation having a wavelength greater than the wavelength of the nonionizing radiation for the patternwise exposing and greater than 200 nm. The chemically amplified resist material comprises a base component, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The generative component comprises a radiation-sensitive sensitizer generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (A). 

Chemically amplified resist material, pattern-forming method, compound, and production method of compound

A resist-pattern-forming method comprises: patternwise exposing a predetermined region of a resist material film to a first radioactive ray that is ionizing radiation or nonionizing radiation; floodwise exposing the resist material film to a second radioactive ray that is nonionizing radiation; baking the resist material film; and developing the resist material film to form a resist pattern. The resist material film is made from a photosensitive resin composition comprising a chemically amplified resist material. The chemically amplified resist material comprises a base component that is capable of being made soluble or insoluble in a developer solution by an action of an acid and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. A van der Waals volume of the acid generated from the generative component is no less than 3.0&#xd7;10m.

Resist-pattern-forming method and chemically amplified resist material

A chemically amplified resist material comprises a polymer component that is capable of being made soluble or insoluble in a developer solution by an action of an acid, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The radiation-sensitive acid-and-sensitizer generating agent or the radiation-sensitive acid generating agent included in the generative component comprises the first compound that is radiation-sensitive and second compound that is radiation-sensitive. The first compound includes a first onium cation and a first anion, and the second compound includes a second onium cation and a second anion that is different from the first anion. Each of an energy released upon reduction of the first onium cation to a radical and an energy released upon reduction of the second onium cation to a radical is less than 5.0 eV.

A chemically amplified resist material comprises a polymer component that is capable of being made soluble or insoluble in a developer solution by an action of an acid, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The radiation-sensitive acid generating agent included in the generative component comprises a compound represented by the formula (B). Rand Reach independently represent a monovalent organic group, or taken together represent a cyclic structure together with the O&#x2014;C&#x2014;O. At least one of Rand Rcomprises a halogen atom, a nitro group, a cyano group, a formyl group, a carbonyl group, a carboxy group, a sulfo group, a sulfonyl group or a combination thereof, or the cyclic structure having 4 to 30 ring atoms is a spiro cyclic structure, a fused cyclic structure or a bridged cyclic structure. 

A pattern-forming method comprises applying a chemically amplified resist material on an antireflective film formed on a substrate to form a resist material film. The resist material film is patternwise exposed to ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to nonionizing radiation having a wavelength greater than the nonionizing radiation for the patternwise exposing and greater than 200 nm. The resist material film floodwise exposed is baked. The resist material film baked is developed with a developer solution. An extinction coefficient of the antireflective film for the nonionizing radiation employed for the floodwise exposing is no less than 0.1. The chemically amplified resist material comprises a base component and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure.

Pattern-forming method

A resist pattern-forming method comprises applying a chemically amplified resist material on a substrate to form a resist film on the substrate. The resist film is patternwise exposed to a radioactive ray having a wavelength of no greater than 250 nm. The resist film patternwise exposed is floodwise exposed to a radioactive ray having a wavelength of greater than 250 nm. The resist film floodwise exposed is baked and developed with a developer solution comprising an organic solvent. The chemically amplified resist material comprises a component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The component comprises: a radiation-sensitive sensitizer generating agent, and at least one of a radiation-sensitive acid-and-sensitizer generating agent and a radiation-sensitive acid generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (B). 

Resist pattern-forming method

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Tokyo, Japan

Tomoki Nagai