Sony Corporation

Sony Semiconductor Solutions Corporation

Tomoki Kurose

Hiroaki Tanaka

Hiromasa Saito

Shinji Nakagawa

Tomoyuki Arai

Takeshi Fujioka

Hirofumi Yamada

Junji Hayafuji

The present technology relates to a solid-state imaging apparatus designed to improve sensitivity while preventing worsening of color mixing. A substrate, a plurality of photoelectric conversion regions provided in the substrate, a color filter provided on the upper side of the photoelectric conversion regions, a trench provided through the substrate and provided between the photoelectric conversion regions, and a recessed region including a plurality of recesses provided on the light-receiving surface side of the substrate above the photoelectric conversion regions are included. The color filter over adjacent two of the photoelectric conversion regions is of the same color. The number of the recesses of the recessed region is larger at a high image height than at an image height center. The present technology can be applied to, for example, a back-illuminated solid-state imaging apparatus etc.

Solid-state imaging apparatus

The present technology relates to a solid-state image sensor, a solid-state imaging device, and a camera device capable of making white flaws unnoticeable even with a reduced cell size. The solid-state image sensor includes: a register unit formed as an n-type impurity region extending in a first direction; a reading unit configured to read charge from the photoelectric conversion unit into the register unit and formed as a p-type impurity region extending in the same direction as the register unit; a horizontal element isolation unit configured to prevent leakage of charge from the photoelectric conversion unit and formed as a p-type impurity region extending in the same direction as the register unit; and multiple transfer electrodes configured to apply voltage for changing potential distribution of the register unit, wherein a total amount of n-type impurity forming the register unit below a low-level electrode having a standby voltage of a predetermined low value among the transfer electrodes is smaller than a total amount of n-type impurity forming the register unit below a middle-level electrode having a standby voltage higher than the predetermined low value.

Solid-state image sensor, solid-state imaging device, and camera device

Growing community of inventors

Kanagawa, Japan

Tomoki Kurose