Semiconductor Energy Laboratory Co., Ltd.

Tomoki Hiramatsu

Shunpei Yamazaki

Yusuke Nonaka

Noritaka Ishihara

Masahiro Takahashi

Yuta Endo

Katsuaki Tochibayashi

Yasumasa Yamane

Ryota Hodo

Ryunosuke Honda

Shota Sambonsuge

Tomoyo Kamogawa

A stack with excellent electrical characteristics and reliability is provided. The stack includes an insulator, a conductor, and a first oxide between the insulator and the conductor; the first oxide includes a first c-axis-aligned crystal region; and a c-axis of the first crystal region is substantially perpendicular to a plane of the first oxide on the insulator side. Alternatively, the stack includes an insulator, a conductor, a first oxide between the insulator and the conductor, and a second oxide facing the first oxide with the insulator therebetween; the first oxide includes a first c-axis-aligned crystal region; a c-axis of the first crystal region is substantially perpendicular to a plane of the first oxide on the insulator side; the second oxide includes a second c-axis-aligned crystal region; and a c-axis of the second crystal region is substantially perpendicular to a plane of the second oxide on the insulator side.

Stack and semiconductor device

A semiconductor device having high operation frequency is provided. The semiconductor device includes a transistor including a first conductive layer, a first insulating layer, a second insulating layer, a first oxide, a second oxide, a third oxide, a third insulating layer, and a second conductive layer that are stacked in this order, and a fourth insulating layer. The first conductive layer and the second conductive layer include a region overlapping with the second oxide. In a channel width direction of the transistor, a level of the bottom surface of the second oxide is from more than or equal to &#x2212;5 nm to less than 0 nm when a level of a region of the bottom surface of the second conductive layer which does not overlap with the second oxide is regarded as a reference.

Semiconductor device

A highly reliable semiconductor device is provided. The semiconductor device includes a first insulator; a first oxide provided over the first insulator; a second oxide provided over the first oxide; a first conductor and a second conductor provided apart from each other over the second oxide; a third oxide provided over the second oxide, the first conductor, and the second conductor; a second insulating film provided over the third oxide; and a third conductor provided over the second oxide with the third oxide and the second insulating film positioned therebetween. The third oxide contains a metal element and nitrogen, and the metal element is bonded to nitrogen.

Semiconductor device and method for manufacturing semiconductor device

Growing community of inventors

Koto, Japan

Tomoki Hiramatsu