Japan Advanced Institute of Science and Technology

Adamant Namiki Precision Jewel Co., Ltd.

Tomoki Ariga

Tatsuya Shimoda

Satoshi Inoue

There are provided an oxide dielectric having excellent properties and a solid state electronic device (e.g., a capacitor, a semiconductor device, or a small electromechanical system) having such an oxide dielectric. An oxide layerincludes an oxide dielectric (possibly including inevitable impurities) including bismuth (Bi) and niobium (Nb) and having a first crystal phase of a pyrochlore-type crystal structure and a second crystal phase of a &#x3b2;-BiNbO-type crystal structure. The oxide layerhas a controlled content of the first crystal phase and a controlled content of the second crystal phase, in which the first crystal phase has a dielectric constant that decreases with increasing temperature of the oxide layerin a temperature range of 25&#xb0; C. or more and 120&#xb0; C. or less, and the second crystal phase has a dielectric constant that increases with increasing temperature of the oxide layerin the temperature range.

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Ishikawa, Japan

Tomoki Ariga