Kabushiki Kaisha Toshiba

Tomokazu Domon

Hironori Fukuda

Ichiro Omura

Kenji Sano

Taeko I Urano

Hideo Nagai

Tsuneo Ogura

Masashi Sahashi

Koichiro Inomata

Tadahiko Kobayashi

Eitaro Miyake

Katsuhiko Takigami

Akio Nakagawa

Koichi Sugiyama

Hiromichi Ohashi

Takahiro Kokubo

Toshihiro Morohoshi

Suzuo Saito

Takahiro Murata

Yuji Ide

Kazuya Kodani

Yoshiki Endo

Masafumi Umeda

Yoshitomo Tagami

Tatsuyuki Mikami

Simon Eicher

Mitsuo Sasuga

Akio Nakagama

Takashi Ishikura

Riyousuke Kumagai

A current detection equipment comprises a first coil and a second coil connected in series with the first coil. The current detection equipment is capable of detecting a current flowing through an object which is provided between the first and second coils or provided in a vicinity of the first or second coil. Each of the first and second coils having first conductive patterns provided on a surface of a substrate, a second conductive patterns provided on a back of the substrate and connecting parts which connect the first and second conductive patterns. A semiconductor device including the current detection equipment to measure the current flowing in a semiconductor element is also proposed.

Current detection equipment and semiconductor device

An article including a substrate and an invisible symbol on the substrate is disclosed. The invisible symbol is formed by a compound which includes a cyano group and has an infrared absorption wavelength apart from that of the substrate when heated.

Method and apparatus for reading invisible symbol

A plurality of semiconductor chips is each arranged over a first conductor. Each of semiconductor chips has a first main electrode, a second main electrode and a control electrode. A second conductor is electrically connected to the second main electrode and has columns each having an upper surface arranged over each of the semiconductor chips and equal to the number of the semiconductor chips. A circuit board has openings penetrated by the columns and equal to the number of the semiconductor chips and has a first insulating film, a third conductive film arranged on a back surface of the first insulating film and electrically connected to the second conductor, and a fourth conductive film arranged on a surface of the first insulating film and electrically connected to the control electrode.

High power semiconductor device having semiconductor chips

An invisible symbol reading apparatus includes a heating unit for heating an invisible symbol formed on a sample and containing a material which emits infrared light when heated, a detecting unit for detecting infrared light emitted from the invisible symbol, and an arithmetic operation unit for binarizing a detection signal from the detecting unit. The arithmetic operation unit calculates a differential coefficient of the detection signal, that corresponds to a position on the sample. On the basis of upper and lower threshold values set for the differential coefficient, the arithmetic operation unit determines a maximum value of the differential coefficient in a region exceeding the upper threshold value and a minimum value of the differential coefficient in a region smaller than the lower threshold value. The arithmetic operation unit binarizes the detection signal by using the maximum or minimum value as a leading or trailing edge of a binary function.

A press-contact type semiconductor device comprises: a plurality of semiconductor elements each of which has a first main electrode and a control electrode and a second main electrode; a second common main power source plate having the semiconductor elements positioned on a front surface thereof and electrically connected to the second main electrodes; a first common main power source plate arranged on the front surfaces of the semiconductor elements and electrically connected to the first main electrodes; a common control signal/main current plate arranged between semiconductor elements and including at least control signal wiring layers and main current wiring layers; conductive connectors for electrically connecting at least the main current wiring layers and the first common maim power source plate; and conductive elastic members for electrically connecting the main current wiring layers or the first common main power source plate to the conductive connectors by elasticity.

Press-contact type semiconductor device

According to this invention, there is provided a drive apparatus for a power device having high- and low-voltage main electrodes and a control electrode, including a circuit for decreasing a voltage of the control electrode to a voltage of the control electrode which is not higher than a threshold voltage of the power device before a voltage between the high- and low-voltage main electrodes enters an overshoot region in a case where the power device is to be turned off. Therefore, electron injection can be stopped before the voltage between the main electrodes rises, the stability of the current density can be improved, and current concentration, oscillation, and the like can be prevented to improve reliability.

Semiconductor device, drive method, and drive apparatus

To transfer an image signal from a electronic camera head to a personal computer, a PC card provides the interface between the camera head and the personal computer. The PC card is removably attached to the personal computer. As instructed by the personal computer, the PC card operates the camera head, sets its states, writes image data into a memory, reads the image data from the memory for transmission to the personal computer, generates control signals for a light refracting member, and informs the personal computer of the state of the camera head.

Image input apparatus for capturing images of multiple resolutions

There is disclosed a double gate GTO thyristor having a high gate gain and a high gate sensitivity, and capable of high speed turn-off. The double gate GTO thyristor comprises an anode/emitter layer, first and second base layers and cathode/emitter layer. A semiconductor layer having a conductivity type opposite to that of the anode/emitter layer is formed in the anode/emitter layer and located at a surface portion of the anode/emitter layer. A first gate electrode is connected to the first base layer, and a second gate electrode to the second base layer. An anode electrode is connected to the anode/emitter layer and all the surface of the semiconductor layer. A cathode electrode is connected to the cathode/emitter layer.

Double gate GTO thyristor

A gate turn-off thyristor drive system with low power loss when it is in the turn-off mode, is disclosed. A first turn-off pulse of a predetermined amplitude is applied to a first gate electrode. A second turn-off pulse is applied to a second gate electrode. An amplitude of the second turn-off pulse is smaller in absolute value than that of the first turn-off pulse. The fall time of the anode current at the time of turn-off is reduced, and the initial value of the tail current of the anode current is reduced. The power loss as the product of the anode voltage and the anode current is reduced.

Thyristor drive system

A torque sensor of noncontact type, by which can be stably measured the torque of a shaft with a sufficient S/N ratio under the influence of external magnetic noise, such as an induction magnetic flux which is produced in an induction motor, and which can be readily disposed in a comparatively small space. When provided on an induction motor, the torque sensor is mounted on the induction motor in noncontacting relationship. The torque sensor detects the torque of the shaft and includes a pair of magnetic material members provided on respective circumferential portions of the peripheral surface of a shaft. A pair of magnetic detectors are disposed at opposite locations at which external magnetic fields having opposite phase exist. The detectors detect the variation of the magnetic characteristics of the magnetic materials, and a signal processing circuit produces a mean value of output signals obtained from the magnetic detectors.

Torque sensor for detecting a shaft torque and an electric machine in

In a torque sensor of a noncontact type for sensing a torque applied to a shaft, a magnetic ribbon is bonded to a circumferential portion of the peripheral surface of the shaft, and a core member made of a magnetic material is arranged above the shaft surface so that its end faces are faced to the magnetic ribbon. A exciting coil and a detecting coil wound around the core so that a magnetic flux produced by the exciting coil and delivered to the detecting coil is detected by the detecting coil. The magnetic ribbon has a length L0 equal to or smaller than one half of the circumferential length Ls of the shaft 4 and satisfying an inequality given by

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Yokosuka, Japan

Tomokazu Domon