Kabushiki Kaisha Toshiba

Kioxia Corporation

Tomohito Kawashima

Yusuke Arayashiki

Hidenori Miyagawa

Takayuki Ishikawa

Takahiro Nonaka

According to one embodiment, a resistive random access memory device includes a first electrode and a second electrode. The resistive random access memory device also includes a resistance change layer connected between the first electrode and the second electrode. The resistive random access memory device also includes a conductive layer connected in series to the resistance change layer between the first electrode and the second electrode. The resistive random access memory device in which the conductive layer includes a plurality of first material layers including a first material and a plurality of second material layers including a second material which is different from the first material.

Resistive random access memory device and method for manufacturing the same

According to one embodiment, a storage device includes first electrodes, second electrodes, a resistance change layer provided between the first electrodes and the second electrodes, and ion metal particles that are formed in an island form between the first electrodes and the resistance change layer and that contain a metal movable inside the resistance change layer. The first electrodes and the second electrodes are formed of a material which is more unlikely to be ionized as compared to the metal, and the first electrodes are in contact with the resistance change layer in an area around the ion metal particles.

Growing community of inventors

Kanagawa, Japan

Tomohito Kawashima