Hitachi, Ltd.

Hitachi Metals, Ltd.

Tomohisa Suzuki

Takeshi Terasaki

Hirotaka Eshima

Fumihito Oka

Hiroshi Moriya

Naofumi Chiwata

Yuusuke Yasuda

A method utilized at a sintered metal layer bonding a semiconductor element and a support substrate together suppresses cracks appearing in the sintered metal layer, and damage to the semiconductor element. A semiconductor device includes a support substrate, a semiconductor element, and a sintered metal layer bonding the support substrate and the semiconductor element. The sintered metal layer has a low porosity region disposed inward of an outer edge of the semiconductor element with the sintered metal layer bonded to the semiconductor element. The region is lower in porosity than the remaining sintered metal layer, and is formed as a wall-shaped structural body having an elongated string and extending from an upper surface to a lower surface of the sintered metal layer. The low porosity region is disposed to surround a region immediately below a center of the semiconductor element along the outer edge of the semiconductor element.

Semiconductor device, sintered metal sheet, and method for manufacturing sintered metal sheet

Provided is a semiconductor module enabling to effectively reduce, with a relatively simple structure, a thermal strain occurring in a bonding section between a semiconductor chip and other conductor members. The semiconductor module is characterized by being provided with: a first wiring layer; a semiconductor element bonded on the first wiring layer via a first bonding layer; a first electrode bonded on the semiconductor element via a second bonding layer; a second electrode connected on the first electrode; and a second wiring layer connected on the second electrode. The semiconductor module is also characterized in that: the width of the second electrode, said width being in the short-side direction, is more than the thickness of the first electrode; and the second electrode is disposed at a position off the center position of the semiconductor element.

Semiconductor module and method for manufacturing semiconductor module

It is an objective of the invention to provide a high-power supply cable characterized in that even when mounted in a narrow space where the cable undergoes a repetitive bending motion, any undesirable deformation out of the bending plane is small. There is provided a power-supply cable including: an electric wire including an electrical conductor and a resin sheath covering the electrical conductor, the electric wire having a tendency to generate a curl under a no-load condition, the curl having a curling direction, the curling direction being a normal to the curl, the electric wire having one or more longitudinal ends; a connecting terminal disposed at one of the longitudinal ends of the electric wire; and a curling tendency direction indicator showing the curling direction, the indicator being disposed along a normal line to the curl of the electric wire.

Power-supply cable and apparatus for manufacturing electric wire used for said power-supply cable

Growing community of inventors

Tokyo, Japan

Tomohisa Suzuki